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HGTD3N60A4S, HGTP3N60A4
Data Sheet August 2003
600V, SMPS Series N-Channel IGBT
The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49327.
Features
* >100kHz Operation at 390V, 3A * 200kHz Operation at 390V, 2.5A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC * 12mJ EAS Capability * Low Conduction Loss * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER HGTD3N60A4S HGTP3N60A4 PACKAGE TO-252AA TO-220AB BRAND 3N60A4 3N60A4
Packaging
JEDEC TO-252AA
NOTE: When ordering, use the entire part number.
G E
Symbol
C
COLLECTOR (FLANGE)
JEDEC TO-220AB
G COLLECTOR (FLANGE) E C G E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
(c)2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1
HGTD3N60A4S, HGTP3N60A4
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified ALL TYPES Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA Single Pulse Avalanche Energy at TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 17 8 40 20 30 15A at 600V 12mJ at 3A 70 0.56 -55 to 150 300 260 W W/oC
oC oC oC
UNITS V A A A V V
600
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
TJ = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = -10mA, VGE = 0V VCE = 600V TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC MIN 600 20 4.5 15 12 VGE = 15V VGE = 20V TYP 2.0 1.6 6.1 8.8 21 26 6 11 73 47 37 55 25 MAX 250 2.0 2.7 2.2 7.0 250 25 32 70 35 UNITS V V A mA V V V nA A mJ V nC nC ns ns ns ns J J J
Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 3A, VGE = 15V
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Pulsed Avalanche Energy Gate to Emitter Plateau Voltage On-State Gate Charge
VGE(TH) IGES SSOA EAS VGEP Qg(ON)
IC = 250A, VCE = 600V VGE = 20V TJ = 150oC, RG = 50, VGE = 15V L = 200H, VCE = 600V ICE = 3A, L = 2.7mH IC = 3A, VCE = 300V IC = 3A, VCE = 300V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-On Energy (Note 3) Turn-Off Energy (Note 2)
td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF
IGBT and Diode at TJ = 25oC ICE = 3A VCE = 390V VGE = 15V RG = 50 L = 1mH Test Circuit - Figure 20
(c)2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1
HGTD3N60A4S, HGTP3N60A4
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-On Energy (Note 3) Turn-Off Energy (Note 2) Thermal Resistance Junction To Case NOTES: 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. TJ = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RJC TEST CONDITIONS IGBT and Diode at TJ = 125oC ICE = 3A VCE = 390V VGE = 15V RG = 50 L = 1mH Test Circuit - Figure 20 MIN TYP 5.5 12 110 70 37 90 50 MAX 8 15 165 100 100 80 1.8 UNITS ns ns ns ns J J J
oC/W
Typical Performance Curves
20 ICE , DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
ICE, COLLECTOR TO EMITTER CURRENT (A) 20
VGE = 15V 16
TJ = 150oC, RG = 50, VGE = 15V, L = 200H
16
12
12
8
8
4
4
0
25
50
75
100
125
150
0
0
100
200
300
400
500
600
700
TC , CASE TEMPERATURE (oC)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
600 fMAX, OPERATING FREQUENCY (kHz)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
TC 75oC
VGE 15V
VCE = 390V, RG = 50, TJ = 125oC tSC
18 16 14 12 10 8 6 4 10 13 14 12 VGE , GATE TO EMITTER VOLTAGE (V) 11 ISC
56 48 40 32 24 16 8 0 15
300 200 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 1.8oC/W, SEE NOTES TJ = 125oC, RG = 50 L = 1mH, V CE = 390V , 1 2 3 4 5 ICE, COLLECTOR TO EMITTER CURRENT (A) 6
100
50
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
(c)2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1
ISC, PEAK SHORT CIRCUIT CURRENT (A)
20
64
HGTD3N60A4S, HGTP3N60A4 Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A) 20 DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250s TJ = 125oC
Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
20 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s 16 TJ = 125oC TJ = 150oC
16
TJ = 150oC
12
12
8
8
4
TJ = 25oC
4
TJ = 25oC
0
0
0
1
2
3
4
5
0
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
240 EOFF, TURN-OFF ENERGY LOSS (J) EON2 , TURN-ON ENERGY LOSS (J) RG = 50, L = 1mH, VCE = 390V 200 160 120 80 40 0 TJ = 25oC, VGE = 12V, VGE = 15V 1 2 3 4 5 6 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 125oC, VGE = 12V, VGE = 15V
140 RG = 50, L = 1mH, VCE = 390V 120 100 80 60 40 20 0 TJ = 25oC, VGE = 12V OR 15V 1 2 3 4 5 6 TJ = 125oC, VGE = 12V OR 15V
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
16 td(ON)I, TURN-ON DELAY TIME (ns) RG = 50, L = 1mH, VCE = 390V
32 RG = 50, L = 1mH, VCE = 390V 28
12 TJ = 25oC, TJ = 125oC, VGE = 12V 8 trI , RISE TIME (ns)
24 20 16 12 8
TJ = 25oC OR TJ = 125oC, VGE = 12V
TJ = 25oC, TJ = 125oC, VGE = 15V 4
TJ = 25oC OR TJ = 125oC, VGE = 15V 1 2 3 4 5 ICE , COLLECTOR TO EMITTER CURRENT (A) 6
0
1
2
3
4
5
6
4
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
(c)2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1
HGTD3N60A4S, HGTP3N60A4 Typical Performance Curves
112 td(OFF)I , TURN-OFF DELAY TIME (ns) VGE = 15V, TJ = 125oC 104 tfI , FALL TIME (ns) 96 88 80 72 64 56 48 1 VGE = 15V, TJ = 25oC VGE = 12V, TJ = 25oC VGE = 12V, TJ = 125oC 88 80 72 64 56 48 RG = 50, L = 1mH, VCE = 390V 40 2 3 4 5 ICE , COLLECTOR TO EMITTER CURRENT (A) 6 1 2 3 TJ = 25oC, VGE = 12V OR 15V 4 5 6 TJ = 125oC, VGE = 12V OR 15V
Unless Otherwise Specified (Continued)
96 RG = 50, L = 1mH, VCE = 390V
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
20 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250s 16
16 14 12 10 8 6 4 2 0 0
IG(REF) = 1mA, RL = 100, TJ = 25oC VCE = 600V
12
8
VCE = 200V
VCE = 400V
TJ = 25oC TJ = 125oC TJ = -55oC
4
0
4
6
8
10
12
14
4
8
12
16
20
24
28
VGE, GATE TO EMITTER VOLTAGE (V)
QG , GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
ETOTAL, TOTAL SWITCHING ENERGY LOSS (J) ETOTAL, TOTAL SWITCHING ENERGY LOSS (J)
FIGURE 14. GATE CHARGE WAVEFORMS
250
RG = 50, L = 1mH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF
1000
TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF
200 ICE = 4.5A 150 ICE = 3A
ICE = 4.5A ICE = 3A 100 ICE = 1.5A
100
50
ICE = 1.5A
0 25
30 3 10 100 RG, GATE RESISTANCE () 1000
50
125 75 100 TC , CASE TEMPERATURE (oC)
150
FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
(c)2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1
HGTD3N60A4S, HGTP3N60A4 Typical Performance Curves
700 FREQUENCY = 1MHz 600 C, CAPACITANCE (pF) 500 400 CIES 300 CRES 200 100 0
Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2.7 2.6 2.5 2.4 2.3 2.2 2.1 2.0 ICE = 4.5A
DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250s,
ICE = 3A
COES 0 20 40 60 80 100
ICE = 1.5A 8 10 12 14 16
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE
ZqJC , NORMALIZED THERMAL RESPONSE
100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 10-5 SINGLE PULSE 10-4 10-3 10-2 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZqJC X RqJC) + TC 10-1 100 t1
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
(c)2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1
HGTD3N60A4S, HGTP3N60A4 Test Circuit and Waveforms
HGTP3N60A4D DIODE TA49369 VGE 90% 10% EON2 L = 1mH RG = 50 DUT + VCE VDD = 390V tfI td(OFF)I ICE 90% 10% td(ON)I trI EOFF ICE
-
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 21. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0).
(c)2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I5

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