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PD -2.365A
HFA08PB120
HEXFRED
Features

TM
Ultrafast, Soft Recovery Diode
VR = 1200V VF(typ.)* = 2.4V IF(AV) = 8.0A Qrr (typ.)= 140nC IRRM (typ.) = 4.5A trr(typ.) = 28ns di(rec)M/dt (typ.)* = 85A/s
Benefits
Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions
Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count
Description
International Rectifier's HFA08PB120 is a state of the art center tap ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8 amps continuous current, the HFA08PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM ) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08PB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
TO-247AC (Modified)
Absolute Maximum Ratings
Parameter
VR IF @ TC = 25C IF @ T C = 100C IFSM IFRM IAS PD @ T C = 25C PD @ TC = 100C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Single Pulse Avalanche Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range
Max.
1200 8.0 130 32 8.0 73.5 29 -55 to +150
Units
V
A
W C
* 125C
5/12/97
HFA08PB120
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
VBR VFM I RM CT LS Cathode Anode Breakdown Voltage Max Forward Voltage Max Reverse Leakage Current Junction Capacitance Series Inductance
Min. Typ. Max. Units
1200 2.6 3.3 3.4 4.3 2.4 3.1 0.31 10 135 1000 11 20 8.0 V V A pF nH
Test Conditions
IR = 100A IF = 8.0A See Fig. 1 IF = 16A IF = 8.0A, TJ = 125C See Fig. 2 VR = V R Rated TJ = 125C, VR = 0.8 x V R RatedD Rated See Fig. 3 VR = 200V Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
tr r trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M /dt1 di(rec)M /dt2 Reverse Recovery Time See Fig. 5, 10 Peak Recovery Current See Fig. 6 Reverse Recovery Charge See Fig. 7 Peak Rate of Fall of Recovery Current During tb See Fig. 8
Min. Typ. Max. Units
28 63 106 4.5 6.2 140 335 133 85 95 160 8.0 11 380 880 ns A nC A/s
Test Conditions
IF = 1.0A, di f/dt = 200A/s, V R = 30V TJ = 25C TJ = 125C I F = 8.0A TJ = 25C TJ = 125C VR = 200V TJ = 25C TJ = 125C dif/dt = 200A/s TJ = 25C TJ = 125C
Thermal - Mechanical Characteristics
Parameter
Tlead RJC RJA RCS Wt Lead Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heat Sink Weight Mounting Torque
Min.
6.0 5.0
Typ.
0.25 6.0 0.21
Max.
300 1.7 40 12 10
Units
C K/W g (oz) Kg-cm lbfin
L=100H, duty cycle limited by max TJ 0.063 in. from Case (1.6mm) for 10 sec Typical Socket Mount Mounting Surface, Flat, Smooth and Greased
HFA08PB120
Reverse Current - IR (A)
Instantaneous Forward Current - I F (A)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Junction Capacitance -CT (pF)
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
HFA08PB120
trr- (nC)
Irr- ( A)
Fig. 5 - Typical Reverse Recovery vs. dif/dt, (per Leg)
Fig. 6 - Typical Recovery Current vs. dif/dt, (per Leg)
Fig. 7 - Typical Stored Charge vs. di f/dt, (per Leg)
di (rec) M/dt- (A /s)
Qrr- (nC)
Fig. 8 - Typical di(rec)M /dt vs. dif /dt, (per Leg)
HFA08PB120
3
IF
trr ta tb
4
REVERSE RECOVERY CIRCUIT
VR = 200V
0 Q rr I RRM
2
0.5 I RRM di(rec)M/dt
5
0.01 L = 70H D.U.T. D IRFP250 S
1
0.75 I RRM di f /dt
4. Qrr - Area under curve defined by trr and I RRM t rr X IRRM Qrr = 2
dif/dt ADJUST G
1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured 5. di(rec)M/dt - Peak rate of change of from zero crossing point of negative current during tb portion of trr going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
L = 100H HIGH-SPEED SWITCH Rg = 25 ohm CURRENT MONITOR FREE-WHEEL DIODE + Vd = 50V
I L(PK)
DUT
DECAY TIME V (AVAL) V R(RATED)
Fig. 11 - Avalanche Test Circuit and Waveforms
HFA08PB120
Conforms to JEDEC Outline TO-247AC(Modified) Dimensions in millimeters and inches
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/97

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