 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 17 KF6 B2 Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prufspannung insulation test voltage tp = 1 ms TC = 80 C TC = 25 C tP = 1 ms, TC = 80C VCES IC,nom. IC ICRM 1700 1200 2400 2400 V A A A TC=25C, Transistor Ptot 9,6 kW VGES +/- 20V V IF 1200 A IFRM 2400 A VR = 0V, t p = 10ms, T Vj = 125C 2 It 440 kA2s RMS, f = 50 Hz, t = 1 min. VISOL 4 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 1200A, V GE = 15V, Tvj = 25C IC = 1200A, V GE = 15V, Tvj = 125C IC = 80mA, VCE = VGE, Tvj = 25C VGE(th) 4,5 VCE sat min. typ. 2,6 3,1 5,5 max. 3,1 3,6 6,5 V V V VGE = -15V ... +15V QG 14,5 C f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cies 79 nF f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V VCE = 1700V, V GE = 0V, Tvj = 25C VCE = 1700V, V GE = 0V, Tvj = 125C VCE = 0V, V GE = 20V, Tvj = 25C Cres ICES 4 0,03 16 2,5 120 400 nF mA mA nA IGES prepared by: Oliver Schilling approved by: Chr. Lubke; 08.10.99 date of publication: 4.9.1998 revision: 2 (serie) 1(8) FZ1200R17KF6B2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 17 KF6 B2 Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 1200A, V CE = 900V VGE = 15V, RG = 1,2, Tvj = 25C VGE = 15V, RG = 1,2, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 1200A, V CE = 900V VGE = 15V, RG = 1,2, Tvj = 25C VGE = 15V, RG = 1,2, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 1200A, V CE = 900V VGE = 15V, RG = 1,2, Tvj = 25C VGE = 15V, RG = 1,2, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 1200A, V CE = 900V VGE = 15V, RG = 1,2, Tvj = 25C VGE = 15V, RG = 1,2, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modulleitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip pro Zweig / per arm IC = 1200A, V CE = 900V, V GE = 15V RG = 1,2, Tvj = 125C, LS = 50nH IC = 1200A, V CE = 900V, V GE = 15V RG = 1,2, Tvj = 125C, LS = 50nH tP 10sec, V GE 15V TVj125C, VCC=1000V, VCEmax=VCES -LsCE *dI/dt ISC LsCE 4800 12 A nH Eoff 480 mWs Eon 330 mWs tf 0,13 0,14 s s td,off 1,1 1,1 s s tr 0,16 0,16 s s td,on 0,3 0,3 s s min. typ. max. RCC+EE 0,08 m Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 1200A, V GE = 0V, Tvj = 25C IF = 1200A, V GE = 0V, Tvj = 125C IF = 1200A, - diF/dt = 7200A/sec VR = 900V, VGE = -10V, T vj = 25C VR = 900V, VGE = -10V, T vj = 125C Sperrverzogerungsladung recovered charge IF = 1200A, - diF/dt = 7200A/sec VR = 900V, VGE = -10V, T vj = 25C VR = 900V, VGE = -10V, T vj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 1200A, - diF/dt = 7200A/sec VR = 900V, VGE = -10V, T vj = 25C VR = 900V, VGE = -10V, T vj = 125C Erec 90 180 mWs mWs Qr 160 350 As As IRM 700 1000 A A VF min. typ. 2,1 1,95 max. 2,5 2,3 V V 2(8) FZ1200R17KF6B2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 17 KF6 B2 Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K RthCK 0,008 RthJC typ. max. 0,013 0,025 K/W K/W K/W Tvj 150 C Top -40 125 C Tstg -40 125 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight terminals M4 terminals M8 G 1050 M1 AlN 17 mm 10 mm 275 5 Nm M2 2 8 - 10 Nm Nm g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) FZ1200R17KF6B2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 17 KF6 B2 Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (V CE) V GE = 15V 2400 2200 2000 1800 1600 IC [A] 1400 1200 1000 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 Tj = 25C Tj = 125C VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) I C = f (V CE) T vj = 125C 2400 2200 2000 1800 1600 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE = 8V IC [A] 1400 1200 1000 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) FZ1200R17KF6B2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 17 KF6 B2 Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C = f (V GE) VCE = 20V 2400 2200 2000 1800 1600 Tj = 25C Tj = 125C IC [A] 1400 1200 1000 800 600 400 200 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 2400 2200 2000 1800 1600 Tj = 125C Tj = 25C I F = f (V F) IF [A] 1400 1200 1000 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) FZ1200R17KF6B2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 17 KF6 B2 Schaltverluste (typisch) Eon = f (I C) , Eoff = f (I C) , Erec = f (I C) Rgon = Rgoff =1,2 , VCE = 900V, T j = 125C, V GE = 15V Switching losses (typical) 1200 Eoff 1000 Eon Erec 800 E [mJ] 600 400 200 0 0 500 1000 1500 2000 2500 IC [A] Schaltverluste (typisch) Switching losses (typical) 1400 E on = f (RG) , Eoff = f (RG) , Erec = f (RG) IC = 1200A , V CE = 900V , T j = 125C, V GE = 15V Eoff 1200 Eon Erec 1000 E [mJ] 800 600 400 200 0 0 2 4 6 8 10 RG [] 6(8) FZ1200R17KF6B2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 17 KF6 B2 Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) 0,1 ZthJC [K / W] 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 1,25 0,003 2,46 0,003 2 6,15 0,05 13,4 0,045 3 2,6 0,1 4,57 0,45 4 3 0,95 4,57 0,75 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 3000 Rg = 1,2 Ohm, T vj= 125C 2500 2000 IC [A] IC,Modul 1500 IC,Chip 1000 500 0 0 200 400 600 800 1000 1200 1400 1600 1800 VCE [V] Seite/page 7 (8) FZ1200R17KF6B2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 17 KF6 B2 Auere Abmessungen / external dimensions 8(8) FZ1200R17KF6B2 |
Price & Availability of FZ1200R17KF6B2
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |