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| P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX6KMJ-2 HIGH-SPEED SWITCHING USE FX6KMJ-2 OUTLINE DRAWING 10 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 3 0.3 E 0.75 0.15 2.54 0.25 2.54 0.25 1 23 3 * 4V DRIVE * VDSS ............................................................. -100V * rDS (ON) (MAX) ................................................ 0.58 * ID ...................................................................... -6A * Integrated Fast Recovery Diode (TYP.) ...........80ns * Viso ................................................................................ 2000V APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 2.6 0.2 1 1 GATE 2 DRAIN 3 SOURCE 2 TO-220FN MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V Conditions Ratings -100 20 -6 -24 -6 -6 -24 20 -55 ~ +150 -55 ~ +150 2000 2.0 4.5 0.2 Unit V V A A A A A W C C V g Jan.1999 Drain current (Pulsed) Avalanche drain current (Pulsed) L = 100H Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX6KMJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25C) Test conditions ID = -1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = -100V, VGS = 0V ID = -1mA, VDS = -10V ID = -3A, VGS = -10V ID = -3A, VGS = -4V ID = -3A, VGS = -10V ID = -3A, VDS = -5V VDS = -10V, VGS = 0V, f = 1MHz Limits Min. -100 -- -- -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.5 0.46 0.55 -1.38 4.7 1110 108 44 9 8 72 33 -1.0 -- 80 Max. -- 0.1 -0.1 -2.0 0.58 0.72 -1.74 -- -- -- -- -- -- -- -- -1.5 6.25 -- Unit V A mA V V S pF pF pF ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = -50V, ID = -3A, VGS = -10V, RGEN = RGS = 50 IS = -3A, VGS = 0V Channel to case IS = -6A, dis/dt = 100A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 40 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA -7 -5 -3 -2 10ms 100s tw = 10s 32 -102 -7 -5 -3 -2 1ms 24 16 -101 -7 -5 -3 -2 TC = 25C Single Pulse 8 DC 0 -100 0 50 100 150 200 -7 -2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) -10 VGS = -10V -5V -4V -3.5V -6 -3V -4 PD = 20W -2 -2.5V OUTPUT CHARACTERISTICS (TYPICAL) -5.0 Tc = 25C Pulse Test DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) -8 -4.0 VGS = -10V -5V -4V -3V -3.0 PD = 20W -2.0 -3.5V -2.5V -1.0 0 0 -4 -8 -12 -16 -20 0 0 -2 -4 -6 -8 -10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX6KMJ-2 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 VGS = ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) -20 Tc = 25C Pulse Test DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () -16 0.8 -4V -10V -12 ID = -12A 0.6 -8 0.4 Tc = 25C Pulse Test -4 -6A -3A 0.2 0 0 -2 -4 -6 -8 -10 0 -10-1 -2 -3 -5 -7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) -20 101 7 5 4 3 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 75C 25C 125C DRAIN CURRENT ID (A) -12 -8 Tc = 25C VDS = -10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) -16 100 7 5 4 3 2 -4 VDS = -5V Pulse Test 0 0 -2 -4 -6 -8 -10 10-1 -7 -1 -10 -2 -3 -4-5 -7-100 -2 -3 -4-5 -7 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 Ciss 5 3 SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C VGS = -10V VDD = -50V RGEN = RGS = 50 td(off) 103 CAPACITANCE Ciss, Coss, Crss (pF) 7 5 4 3 2 SWITCHING TIME (ns) 2 102 7 5 Tch = 25C f = 1MHZ VGS = 0V Coss tf 3 2 td(on) 102 7 5 4 3 Crss 101 7 5 -7 -10-1 tr -2 -3 -5 -7 -100 -2 -3 -5 -7 2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 -3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX6KMJ-2 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -20 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) -10 Tch = 25C ID = -6A SOURCE CURRENT IS (A) -8 VDS = -20V -16 TC = 25C 75C 125C -6 -50V -80V -12 -4 -8 -2 -4 0 0 4 8 12 16 20 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 -4.0 7 5 4 3 2 VGS = -10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = -10V ID = -1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) -3.2 -2.4 100 7 5 4 3 2 -1.6 -0.8 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = -1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 1.2 101 3 2 1.0 7 D = 1.0 5 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 0.8 100 7 5 3 2 0.6 0.4 -50 0 50 100 150 10-1 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (C) |
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