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 P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX6ASJ-06
HIGH-SPEED SWITCHING USE
FX6ASJ-06
OUTLINE DRAWING
6.5 5.0 0.2
4
Dimensions in mm
5.5 0.2
1.5 0.2
0.5 0.1
1.0 max
2.3 min
10 max
1.0
A
0.5 0.2 0.8
0.9 max
2.3
2.3
2.3
1
2 3
3
* 4V DRIVE * VDSS ............................................................... -60V * rDS (ON) (MAX) ................................................ 0.21 * ID ...................................................................... -6A * Integrated Fast Recovery Diode (TYP.) ...........50ns
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
1
1 2 3 4 24
GATE DRAIN SOURCE DRAIN
MP-3
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V
Conditions
Ratings -60 20 -6 -24 -6 -6 -24 30 -55 ~ +150 -55 ~ +150
Unit V V A A A A A W C C g Jan.1999
Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 100H Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value
0.26
P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX6ASJ-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25C)
Test conditions ID = -1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = -60V, VGS = 0V ID = -1mA, VDS = -10V ID = -3A, VGS = -10V ID = -3A, VGS = -4V ID = -3A, VGS = -10V ID = -3A, VDS = -5V VDS = -10V, VGS = 0V, f = 1MHz
Limits Min. -60 -- -- -1.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.8 0.16 0.27 -0.48 4.9 1040 171 68 13 10 63 31 -1.0 -- 50 Max. -- 0.1 -0.1 -2.3 0.21 0.37 -0.63 -- -- -- -- -- -- -- -- -1.5 4.17 --
Unit V A mA V V S pF pF pF ns ns ns ns V C/W ns
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = -30V, ID = -3A, VGS = -10V, RGEN = RGS = 50
IS = -3A, VGS = 0V Channel to case IS = -6A, dis/dt = 100A/s
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 40 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA -102
-7 -5 -3 -2 tw = 10s 100s
32
-101
-7 -5 -3 -2
24
16
1ms 10ms DC TC = 25C Single Pulse
-100
-7 -5 -3 -2
8
0
0
50
100
150
200
-10-1
-2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2
CASE TEMPERATURE TC (C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL)
-20 Tc = 25C Pulse Test PD = 30W -5V -12 -4V -8 VGS = -10V -8V -6V
OUTPUT CHARACTERISTICS (TYPICAL) -10
Tc = 25C Pulse Test VGS = -10V -8V -6V -5V
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
-16
-8
-6
-4V
-4
-4 -3V
-2
-3V
0
0
-1.0
-2.0
-3.0
-4.0
-5.0
0
0
-0.4
-0.8
-1.2
-1.6
-2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999
P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX6ASJ-06
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5
Tc = 25C Pulse Test
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) -5.0
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
-4.0
0.4
VGS = -4V
-3.0
ID = -12A
0.3
-2.0
0.2
-10V
-1.0
-6A -3A
0.1 0 -10-1 -2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 DRAIN CURRENT ID (A)
0
0
-2
-4
-6
-8
-10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) -20
Tc = 25C VDS = -10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101
7 5 125C TC = 25C 75C
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
-16
3 2
-12
100
7 5 3 2 VDS = -5V Pulse Test
-8
-4
0
0
-2
-4
-6
-8
-10
10-1 -1 -10
-2 -3
-5 -7-100
-2 -3
-5 -7-101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL)
2
SWITCHING CHARACTERISTICS (TYPICAL)
3 2 Tch = 25C VGS = -10V VDD = -30V RGEN = RGS = 50
104
7 5
Tch = 25C f = 1MHZ VGS = 0V
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
3 2
102
7 5 4 3 2
td(off)
103
7 5 3 2
Ciss
tf tr td(on)
Coss Crss
102
7 5
101
7 5 4 3 -5-7-10-1 -2 -3 -5-7 -100 -2 -3 -5-7 -101 -2 -3 -5
3 2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 -3
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A) Jan.1999
P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX6ASJ-06
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -20
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
-10
Tch = 25C ID = -6A
SOURCE CURRENT IS (A)
-8
VDS = -10V
-16
TC = 125C 75C 25C
-6
-20V -40V
-12
-4
-8
-2
-4
0
0
4
8
12
16
20
0
0
-0.4
-0.8
-1.2
-1.6
-2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 -4.0
7 5 4 3 2 VGS = -10V ID = 1/2ID Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = -10V ID = -1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
-3.2
-2.4
100
7 5 4 3 2
-1.6
-0.8
10-1
-50
0
50
100
150
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = -1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102
7 5 3 2
1.2
101
7 5 D = 1.0 3 0.5 2 0.2
1.0
0.8
PDM 0.1 0.05 0.02 0.01 Single Pulse
tw T D= tw T
100
7 5 3 2
0.6
0.4
-50
0
50
100
150
10-1 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999
CHANNEL TEMPERATURE Tch (C)


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