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| FDMS2572 N-Channel UltraFET Trench(R) MOSFET February 2006 FDMS2572 N-Channel UltraFET Trench(R) MOSFET 150V, 4.5A, 47m General Description UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for low rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features Max rDS(on) = 47m at VGS = 10V, ID = 4.5A Typ Qg = 31nC at VGS = 10 V Low Miller Charge Optimized efficiency at high frequencies Applications Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier PIN 1 S S S G 1 2 3 4 D MLP 5X6 D Symbol VDS VGS ID PD TJ, TSTG D D D TA=25oC unless otherwise noted 8 7 6 5 Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 150 20 (Note 1a) Units V V A W C C/W 4.5 30 2.8 1.1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 44 115 Package Marking and Ordering Information Device Marking FDMS2572 Device FDMS2572 Reel Size 7'' Tape width 12mm Quantity 3000 units www.fairchildsemi.com (c)2006 Fairchild Semiconductor Corporation FDMS2572 Rev C(W) FDMS2572 N-Channel UltraFET Trench(R) MOSFET Electrical Characteristics Symbol WDSS IAR TA = 25C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions VDD = 75 V, ID = 15 A, L=1mH Min Typ Max Units 112 15 mJ A Drain-Source Avalanche Ratings (Note 1) Off Characteristics BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ rDS(on) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) VGS = 0 V, ID = 250 A 150 180 1 100 2 3.0 -9.8 36 39 69 14 47 53 103 4 V mV/C A nA ID = 250 A, Referenced to 25C VDS = 120 V, VGS = 20 V, VGS = 0 V VDS = 0 V ID = 250 A On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, V mV/C m S ID = 250 A, Referenced to 25C ID = 4.5 A VGS = 10 V, ID = 4.5 A VGS = 6 V, VGS = 10 V, ID = 4.5 A, TJ = 125C VDS = 10 V, ID =4.5 A gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 75 V, VGS = 10 V ID = 4.5 A, f = 1.0 MHz VDD = 75 V, VGS = 10 V, ID = 1 A, RGEN = 6 VDS = 75 V, f = 1.0 MHz V GS = 0 V, 1960 130 30 1.3 11 8 38 31 31 9 7 20 16 61 50 43 pF pF pF ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Notes: 1. Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 2.2 A (Note 2) 0.7 67 130 1.0 V nS nC IF = 4.5 A, diF/dt = 100 A/s RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a) 44C/W when 2 mounted on a 1in pad of 2 oz copper b) 115 C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDMS2572 Rev C(W) www.fairchildsemi.com FDMS2572 N-Channel UltraFET Trench(R) MOSFET Typical Characteristics 40 rDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 35 ID, DRAIN CURRENT (A) 30 25 20 15 10 1.8 6.0V 5.5V VGS = 4.5V 1.6 1.4 5.0V 5.0V 5.5V 6.0V 1.2 6.5V 7.0V 10V 4.5V 5 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) 1 0.8 0 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.11 rDS(ON), ON-RESISTANCE (OHM) 2.4 rDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 o ID = 4.5A VGS = 10V ID = 2.3A 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 TA = 25 C o TA = 125 C o 125 150 3 4 5 6 7 8 9 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 50 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 10V ID, DRAIN CURRENT (A) 40 VGS = 0V 10 1 30 TA = 125oC 0.1 20 TA = 125 C 10 -55oC 0 2.5 3 3.5 4 4.5 5 5.5 6 VGS, GATE TO SOURCE VOLTAGE (V) o 25oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 25oC -55oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMS2572 Rev C(W) www.fairchildsemi.com FDMS2572 N-Channel UltraFET Trench(R) MOSFET Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) 9 8 7 100V 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 Qg, GATE CHARGE (nC) CAPACITANCE (pF) ID = 4.5A VDS = 50V 75V 2700 2400 2100 1800 1500 1200 900 600 300 0 0 25 50 75 100 125 150 VDS, DRAIN TO SOURCE VOLTAGE (V) Ciss f = 1MHz VGS = 0 V Coss Crss Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 10ms 100ms 1s 10s DC 0.1 VGS = 10V SINGLE PULSE RJA = 115oC/W TA = 25oC 0.001 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) 1ms 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE RJA = 115C/W TA = 25C 1 30 20 0.01 10 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA =115 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDMS2572 Rev C(W) www.fairchildsemi.com FDMS2572 N-Channel UltraFET Trench(R) MOSFET Dimensional Outline and Pad Lay-out FDMS2572 Rev C(W) www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 |
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