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| FDJ1027P P-Channel 1.8V Specified PowerTrench(R) MOSFET August 2006 FDJ1027P P-Channel 1.8V Specified PowerTrench(R) MOSFET Features -2.8 A, -20 V RDS(ON) = 160 m @ VGS = -4.5 V RDS(ON) = 230 m @ VGS = -2.5 V RDS(ON) = 390 m @ VGS = -1.8 V Low gate charge, High Power and Current handling capability High performance trench technology for extremely low RDS(ON) FLMP SC75 package: Enhanced thermal performance in industry-standard package size General Description This dual P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. Applications Battery management/Charger Application Load switch S2 S1 G1 4 5 Bottom Drain Contact 3 2 1 S1 S2 G2 6 MOSFET Maximum Ratings TA=25C unless otherwise noted Symbol VDSS VGSS ID PD TJ, Tstg RJA RJC Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range (Note 1a) Parameter Ratings -20 8 -2.8 -12 1.5 0.9 -55 to +150 Units V V A W C C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) 80 5 Package Marking and Ordering Information .G FDJ1027P 7" 8mm 3000 units (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDJ1027P Rev. C3 FDJ1027P P-Channel 1.8V Specified PowerTrench(R) MOSFET Electrical Characteristics TA = 25C unless otherwise noted Symbol Off Characteristics BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -2.8 A VGS = -2.5 V, ID = -2.2 A VGS = -1.8 V, ID = -1.7 A VGS = -4.5 V, ID = -2.8 A, TJ = 125C VDS = -5 V, ID = -2.8 A VDS = -10 V, VGS = 0 V, f = 1.0 MHz -0.4 -0.8 3 108 163 283 150 5 160 230 390 238 -20 -13 -1 100 V mV/C A nA Parameter Test Conditions Min Typ Max Units On Characteristics (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance -1.5 V mV/C m gFS Ciss Coss Crss Rg Forward Transconductance S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance f = 1.0 MHz 290 55 29 13 pF pF pF 16 23 23 32 4 ns ns ns ns nC nC nC Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 80C/W when mounted on a 1in2 pad of 2 oz copper (Single Operation). b) 140C/W when mounted on a minimum pad of 2 oz copper (Single Operation). Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 8 13 13 18 VDS = -10 V, ID = -2.8 A, VGS = -4.5 V 3 0.65 0.75 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.25 A (Note 2) Diode Reverse Recovery Time Diode Reverse Recovery Charge IF = -2.8 A, diF/dt = 100 A/s -0.8 14 4 -1.25 -1.2 A V ns nC Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 2 FDJ1027P Rev. C3 www.fairchildsemi.com FDJ1027P P-Channel 1.8V Specified PowerTrench(R) MOSFET Typical Characteristics 10 VGS=-4.5V 8 -2.5V 6 -3.5V 2.6 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V 2.4 V GS=-1.8V 2.2 2 -2.0V 1.8 1.6 1.4 1.2 1 0.8 -2.5V -3.0V -3.5V -4.0V -4.5V -ID, DRAIN CURRENT (A) 4 -2.0V -1.8V 2 0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.5 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 RDS(ON) , ON-RESISTANCE (OHM) 1.4 I D = -2.8A VGS = -4.5V I D = -1.4A 0.44 0.38 0.32 TA = 125C 0.26 0.2 0.14 TA = 25C 0.08 1.5 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE (C) -VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 5 T A = -55C 25 C Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V VGS=0V 10 -ID , DRAIN CURRENT (A) 4 125 C 3 1 TA = 125C 0.1 25C 0.01 -55C 0.001 0.0001 2 1 0 0.5 1 1.5 2 2.5 -VGS , GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 FDJ1027P Rev. C3 www.fairchildsemi.com FDJ1027P P-Channel 1.8V Specified PowerTrench(R) MOSFET Typical Characteristics 5 500 ID = -2.8A 4 VDS = -5V -15V 3 -10V 400 f = 1 MHz VGS = 0 V CISS 300 -V GS, GATE-SOURCE VOLTAGE (V) 2 CAPACITANCE (pF) 200 COSS 100 CRSS 1 0 0 0.5 1 1.5 2 2.5 3 3.5 Q g, GATE CHARGE (nC) 0 0 5 10 15 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 10 100 s RDS(ON) LIMIT 10ms 1s DC VGS = -4.5V SINGLE PULSE RJA = 140 o C/W T A = 25 oC 10s 1ms 100ms 8 SINGLE PULSE RJA = 140C/W T A = 25C 6 1 4 0.1 2 0.01 0.1 1 10 100 -VDS , DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 RJA(t) = r(t) * R JA RJA = 140 C/W 0.2 P(pk) 0.1 0.1 t1 0.05 0.02 0.01 SINGLE PULSE t2 T J - T A = P * R JA (t) Duty Cycle, D = t 1/t 2 0.01 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 4 FDJ1027P Rev. C3 www.fairchildsemi.com FDJ1027P P-Channel 1.8V Specified PowerTrench(R) MOSFET Dimensional Outline and Pad Layout DRAIN 1 PKG C L 3 (0.24) (0.18) 0.30 MIN DRAIN 1 TERMINAL (0.73) (0.50) 0.84 0.20 PKG C L 0.60 DRAIN 2 1 6 PKG C L 4 0.30 0.20 PKG C L (0.46) 6 4 2.35 MIN 1.35 DRAIN 1 0.50 MIN 3 Bottom View 0.50 1.70 1.50 PKG C L 6 4 DRAIN 2 TERMINAL 1.00 A Recommended Landing Pattern B PKG C L 1.75 1.55 1 3 (0.20) 0.50 1.00 0.275 0.125 0.075 M A B 0.50 Top View 1.00 PKG C L 0.80 0.65 SEATING PLANE PKG C L 0.225 0.075 1.075 0.925 2.15 1.85 5 FDJ1027P Rev. C3 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I20 |
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