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| FDA62N28 280V N-Channel MOSFET UniFET FDA62N28 280V N-Channel MOSFET Features * 62A, 280V, RDS(on) = 0.051 @VGS = 10 V * Low gate charge ( typical 77 nC) * Low Crss ( typical 83 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D ! " G! !" " " TO-3P G DS FDA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) FDA62N28 280 62 37 248 30 1919 62 50 4.5 500 4 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/C C C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min. -0.24 -- Max. 0.25 -40 Unit C/W C/W C/W (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDA62N28 Rev. A FDA62N28 280V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDA62N28 Device FDA62N28 Package TO-3P TC = 25C unless otherwise noted Reel Size - Tape Width - Quantity 30 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 280V, VGS = 0V VDS = 224V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 31A VDS = 40V, ID = 31A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 280 -----3.0 ------ Typ. -0.28 -----0.043 51 3560 730 83 90 560 110 220 77 25 41 Max Units --1 10 100 -100 5.0 0.051 -4630 950 120 190 1130 230 450 100 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 140V, ID = 62A RG = 25 ---(Note 4, 5) ----- VDS = 224V, ID = 62A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 62A VGS = 0V, IS = 62A dIF/dt =100A/s (Note 4) ------ ---236 6.1 62 248 1.4 --- A A V ns C 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.82mH, IAS = 62A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 62A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDA62N28 Rev. A 2 www.fairchildsemi.com FDA62N28 280V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 2 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 2 10 1 150 C 10 1 o 25 C o -55 C Notes : 1. VDS = 40V 2. 250 s Pulse Test o 10 0 Notes : 1. 250 s Pulse Test 2. TC = 25 -1 10 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.10 0.09 0.08 0.07 0.06 RDS(ON) [ ], Drain-Source On-Resistance VGS = 10V IDR, Reverse Drain Current [A] 10 2 VGS = 20V 0.05 0.04 Note : TJ = 25 10 1 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test 0.03 0 25 50 75 100 125 150 175 200 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 12 9000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] 10 VDS = 56V VDS = 140V VDS = 224V Coss Capacitances [pF] 6000 8 Ciss 6 3000 4 Crss Note ; 1. VGS = 0 V 2. f = 1 MHz 2 Note : ID = 62A 0 -1 10 0 10 0 10 1 0 10 20 30 40 50 60 70 80 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FDA62N28 Rev. A 3 www.fairchildsemi.com FDA62N28 280V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 31 A 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 70 10 3 10 2 10 s 100 s 60 50 40 30 20 10 0 25 ID, Drain Current [A] 10 1 Operation in This Area is Limited by R DS(on) 10 0 Notes : 10 -1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 -2 10 0 10 1 10 2 ID, Drain Current [A] 1 ms 10 ms DC 100 ms 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [] Figure 11. Transient Thermal Response Curve Z JC Thermal Response (t), 10 -1 D =0.5 0.2 0.1 0.05 10 -2 0.02 0.01 single pulse N ote s : 1. Z JC = 0 .25 /W M ax. (t) 2. D u ty Facto r, D =t 1 /t 2 3. T JM - T C = P D M * Z JC (t) PDM t1 t2 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t 1 , S quare W ave P ulse D uration [sec] FDA62N28 Rev. A 4 www.fairchildsemi.com FDA62N28 280V N-Channel MOSFET Gate Charge Test Circuit & Waveform 50K 12V 200nF 300nF Same Type as DUT VDS VGS 10V Qgs Qg VGS Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG 10V VGS RL VDD VDS 90% DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG 10V tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD tp DUT VDS (t) Time FDA62N28 Rev. A 5 www.fairchildsemi.com FDA62N28 280V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FDA62N28 Rev. A 6 www.fairchildsemi.com FDA62N28 280V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters FDA62N28 Rev. A 7 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 |
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