|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Technische Information / Technical Information IGBT-Module IGBT-Modules FD 800 R 33 KF2 Datenblatt data sheet Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. Current Grenzlastintegral der Diode I2t - value, Diode Spitzenverlustleistung der Diode maximum power dissipation diode Isolations-Prufspannung insulation test voltage Teilentladungs-Aussetzspannung partial discharge extinction voltage tP = 1 ms Tj = 25C Tj = -25C TC = 80C TC = 25 C tP = 1 ms, TC = 80C VCES 3300 3300 800 1300 1600 V V A A A IC,nom. IC ICRM TC=25C, Transistor Ptot 9,6 kW VGES +/- 20V V IF 800 A IFRM 1600 A VR = 0V, tp = 10ms, TVj = 125C I2t 222.200 A2s Tj = 125C PRQM 800 kW RMS, f = 50 Hz, t = 1 min. VISOL 6.000 V RMS, f = 50 Hz, QPD 10 pC (acc. to IEC 1287) VISOL 2.600 V Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Gateladung gate charge Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 800 A, VGE = 15V, Tvj = 25C IC = 800 A, VGE = 15V, Tvj = 125C IC = 80 mA, VCE = VGE, Tvj = 25C VGE(th) VCE sat min. 4,2 typ. 3,40 4,30 5,1 max. 4,25 5,00 6,0 V V V f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cies - 100 - nF f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cres - 5,4 - nF VGE = -15V ... + 15V, VCE = 1800V VCE = 3300V, VGE = 0V, Tvj = 25C VCE = 3300V, VGE = 0V, Tvj = 125C VCE = 0V, VGE = 20V, Tvj = 25C QG ICES - 15 0,1 40 - 8 100 400 C mA mA nA IGES - prepared by: Jurgen Gottert approved by: Chr. Lubke; 20.07.99 date of publication : 08.06.99 revision: 2 1 (9) Datenblatt FD 800 R 33 KF21 20.07.99 Technische Information / Technical Information IGBT-Module IGBT-Modules FD 800 R 33 KF2 Datenblatt data sheet Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 800 A, VCC = 1800V VGE = 15V, RG = 1,8 , CGE = 150nF, Tvj = 25C VGE = 15V, RG = 1,8 , CGE = 150nF, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 800 A, VCC = 1800V VGE = 15V, RG = 1,8 , CGE = 150nF, Tvj = 25C VGE = 15V, RG = 1,8 , CGE = 150nF, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 800 A, VCC = 1800V VGE = 15V, RG = 1,8 , CGE = 150nF, Tvj = 25C VGE = 15V, RG = 1,8 , CGE = 150nF, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 800 A, VCC = 1800V VGE = 15V, RG = 1,8 , CGE = 150nF, Tvj = 25C VGE = 15V, RG = 1,8 , CGE = 150nF, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul-Leitungswiderstand, Anschlusse - Chip lead resistance, terminals - chip IC = 800 A, VCC = 1800V, VGE = 15V RG = 1,8 , CGE = 150 nF, Tvj = 125C, LS = 40nH IC = 800 A, VCC = 1800V, VGE = 15V RG = 1,8 , CGE = 150 nF, Tvj = 125C, LS = 40nH tP 10sec, VGE 15V TVj125C, VCC=2500V, VCEmax=VCES -LsCE *dI/dt IGBT (Zweig / arm 1+2 parallel ) Diode (Zweig / arm 3) T = 25C, IGBT (Zweig / arm 1+2 parallel ) T = 25C, Diode (Zweig / arm 3) ISC LsCE 4000 12 25 0,19 0,34 A nH nH m m Eoff 1020 mWs Eon 1920 mWs tf 200 200 ns ns td,off 1550 1700 ns ns tr 250 270 ns ns td,on 370 350 ns ns min. typ. max. RCC'+EE' Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage Sperrstrom reverse current Ruckstromspitze peak reverse recovery current IF = 800 A, VGE = 0V, Tvj = 25C IF = 800 A, VGE = 0V, Tvj = 125C VCE = 3300V, Tvj = 25C, Zweig / arm 3 VCE = 3300V, Tvj = 125C, Zweig / arm 3 IF = 800 A, - diF/dt = 2500 A/sec VR = 1800V, VGE = -10V, Tvj = 25C VR = 1800V, VGE = -10V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 800 A, - diF/dt = 2500 A/sec VR = 1800V, VGE = -10V, Tvj = 25C VR = 1800V, VGE = -10V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 800 A, - diF/dt = 2500 A/sec VR = 1800V, VGE = -10V, Tvj = 25C VR = 1800V, VGE = -10V, Tvj = 125C Erec 490 1000 mWs mWs Qr 500 900 As As IRM 650 700 A A IR VF min. - typ. 2,80 2,80 0,01 4 max. 3,50 3,50 1,6 20 V V mA mA 2 (9) Datenblatt FD 800 R 33 KF21 20.07.99 Technische Information / Technical Information IGBT-Module IGBT-Modules FD 800 R 33 KF2 Datenblatt data sheet Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Transistor / transistor, DC Diode/Diode, DC, Zweig / arm 1+2 Diode/Diode, DC, Zweig / arm 3 Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K RthCK RthJC - typ. 0,004 max. 0,013 0,026 0,026 K/W K/W K/W K/W Tvj - - 150 C Top -40 - 125 C Tstg -40 - 125 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Material Modulgrundplatte material of module baseplate Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight terminals M4 terminals M8 G M1 AlSiC AlN 32,2 mm 19,1 mm > 400 5 Nm M2 2 8 .. 10 1500 Nm Nm g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (9) Datenblatt FD 800 R 33 KF21 20.07.99 Technische Information / Technical Information IGBT-Module IGBT-Modules FD 800 R 33 KF2 Datenblatt data sheet Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (VCE) VGE = 15V 1600 1400 T = 25C 1200 1000 T = 125C IC [A] 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 1600 1400 1200 1000 I C = f (VCE) Tvj = 125C VGE = 8V VGE = 9V VGE = 10V VGE = 12V VGE = 15V VGE = 20V IC [A] 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 VCE [V] 4 (9) Datenblatt FD 800 R 33 KF21 20.07.99 Technische Information / Technical Information IGBT-Module IGBT-Modules FD 800 R 33 KF2 Datenblatt data sheet Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C = f (VGE) VCE = 20V 1600 1400 1200 1000 T = 25C T = 125C IC [A] 800 600 400 200 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 1600 1400 1200 1000 Tj = 25C Tj = 125C I F = f (VF) IF [A] 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VF [V] 5 (9) Datenblatt FD 800 R 33 KF21 20.07.99 Technische Information / Technical Information IGBT-Module IGBT-Modules FD 800 R 33 KF2 Datenblatt data sheet Schaltverluste (typisch) Switching losses (typical) E on = f (IC) , E off = f (IC) , E rec = f (IC) RG,on = 1,8 , RG,off = 1,8 , CGE = 150 nF, VCE = 1800V, Tj = 125C 7000 Eon 6000 Eoff Erec 5000 E [mJ] 4000 3000 2000 1000 0 0 200 400 600 800 1000 1200 1400 1600 IC [A] Schaltverluste (typisch) Switching losses (typical) 8000 7000 6000 5000 E [mJ] 4000 3000 2000 1000 0 0 2 4 6 8 10 Eon Eoff Erec E on = f (RG) , E off = f (RG) , E rec = f (RG) IC = 800 A , CGE = 150 nF, VCE = 1800V , Tj = 125C 12 14 16 18 20 22 24 RG [] 6 (9) Datenblatt FD 800 R 33 KF21 20.07.99 Technische Information / Technical Information IGBT-Module IGBT-Modules FD 800 R 33 KF2 Datenblatt data sheet Sicherer Arbeitsbereich IGBT (RBSOA) Reverse bias safe operation area IGBT (RBSOA) 1800 1600 1400 1200 1000 IC [A] 800 600 400 200 0 0 500 1000 1500 2000 IC,Modul IC,Chip RG,off = 1,8 , CGE = 150 nF Tvj= 125C 2500 3000 3500 VCE [V] Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA) 1800 1600 1400 1200 1000 IR [A] 800 600 400 200 0 0 500 1000 1500 2000 2500 T = 125C vj 3000 3500 VR [V] 7 (9) Datenblatt FD 800 R 33 KF21 20.07.99 Technische Information / Technical Information IGBT-Module IGBT-Modules FD 800 R 33 KF2 Datenblatt data sheet Transienter Warmewiderstand Transient thermal impedance 0,1 Z thJC = f (t) Zth:IGBT Zth:Diode 0,01 ZthJC [K / W] 0,001 0,0001 0,001 0,01 0,1 1 10 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 2,38 0,0068 4,76 0,0068 2 6,49 0,0642 12,98 0,0642 3 1,93 0,3209 3,86 0,3209 4 2,20 2,0212 4,40 2,0212 8 (9) Datenblatt FD 800 R 33 KF21 20.07.99 Technische Information / Technical Information IGBT-Module IGBT-Modules FD 800 R 33 KF2 Datenblatt data sheet Gehausemae / Schaltbild Package outline / Circuit diagram 9 (9) Datenblatt FD 800 R 33 KF21 20.07.99 |
Price & Availability of FD800R33KF2 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |