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| PROVISIONAL SemiWell Semiconductor F16M40CT Symbol 16A Schottky Barrier Rectifier Features 1! Plastic material meets UL94V-0 Metal silicon junction Very low forward voltage drop High current / High surge capability Guarding for over voltage protection Lead solderable per MIL-STD202,method 208 guaranteed Lead temperature for soldering purpose 250C Max for 10 second Weight : 2.2 gram (approximately) b : ! 2 3! b : TO-220F General Description The F16M40CT schottky Rectifier has been designed for applcations requiring low forward voltage drop and switching power supply, dc-dc converter, free-wheeling diode, battery charging, polarity protection application. 1 2 3 Absolute Maximum Ratings Symbol VRRM VR IF(AV) IFSM Eas TJ TSTG Parameter Repetitive Peak Reverse Voltage Maximum DC Reverse Voltage Average Forward Current @ TC = 97C Per Diode Total Device Value 40 40 8 16 250 4.5 - 65 ~ 125 - 65 ~ 150 Units V V A A A mJ C C Non-Repetitive Peak Surge Current (Surge applied at rated load conditions half sinewave,single phase, 60Hz) Non-Repetitive Avalanche Energy @ TC=25C , Vdd = 15V , L=18uH Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Symbol RJC Parameter Maximum Thermal Resistance, Junction-to-Case ( per diode ) Value 3.5 Units C/W Nov, 2002. Rev. 0 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1/3 F16M40CT Electrical Characteristics Symbol Reverse Leakage Current IR VR = VRRM TC = 25 C TC = 125 C - Parameter Min Typ - Max 1 50 Units mA Forward Voltage Drop IF = IF = IF = IF = 8A 8A 16 A 16 A TC = 25 C TC = 125 C TC = 25 C TC = 125 C 0.55 0.50 0.70 0.62 VF - - V CT Typical Junction Capacitance @ fT=1MHZ , VR=4V , Tj =25 700 PF 2/3 F16M40CT Fig 1. VF-IF Characteristic 10 Fig 2. VR-IR Characteristic Forward Current, IF[A] 10 TJ=125- Reverse Current, IR[mA] TJ=1251 TJ=75- TJ=250.1 1 TJ=25- 0.1 0.2 0.4 0.6 0.8 1.0 0.01 0 8 16 24 32 40 48 56 Forward Voltage Drop, VF[V] Reverse Voltage, VR[V] Fig 3. Typical junctiion capacitance Fig 4. Forward current derating curve 12 6 . Notes 1. TJ = 252. F = 1MHz 3. Vsig = 50mVP-P Average forward Current, IF(AV)[A] 100 Junction capacitance, CJ[pF] 10 8 1000 6 4 2 100 0.1 0 1 10 0 25 50 75 100 125 150 Reverse Voltage, VR[V] Case Temperature, TC[-] Fig 5. Maximum non-repetitive forward surge current per diode 300 Peak Forward Surge Current, IFSM[A] 250 200 150 100 50 0 1 10 100 Reverse Voltage, VR[V] 3/3 |
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