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| Eudyna GaN-HEMT 90W Preliminary FEATURES High Voltage Operation : VDS=50V High Power : 50.0dBm (typ.) @ P3dB High Efficiency: 55%(typ.) @ P3dB Linear Gain : 14.0dB(typ.) @ f=2.6GHz Proven Reliability ES/EGN26A090IV High Voltage - High Power GaN-HEMT DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch Condition Tc=25oC RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature r P Symbol VDS IGF IGR Tch im l e Condition RG=5 RG=5 Vp VGDO P3dB d GL Rth a in Rating Limit 50 120 -5 150 -65 to +175 250 ry Unit V V W oC oC Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min. Pinch-Off Voltage Gate-Drain Breakdown Voltage 3dB Gain Compression Power Drain Efficiency Linear Gain Thermal Resistance VDS=50V IDS=36mA IGS=- 18mA VDS=50V IDS(DC)=500mA f=2.6GHz Channel to Case TBD -1.0 TBD Limit Typ. Max. -2.0 -350 50.0 55 14.0 1.3 -3.5 1.5 Unit V V dBm % dB oC/W Edition 1.2 Dec. 2005 1 ES/EGN26A090IV High Voltage - High Power GaN-HEMT Output Power vs. Frequency VDS=50V IDS(DC)=500mA Output Power and Drain Efficiency vs. Input Power VDS=50V IDS(DC)=500mA f=2.6GHz 53 51 49 Output Power [dBm] Output Power [dBm] 47 45 43 41 39 37 35 33 2.45 2.50 2.55 2.60 2.65 2.70 2.75 53 51 49 47 45 43 41 39 37 35 33 100 90 80 70 60 Drain Efficiency [%] Frequency [GHz] Pin=22dBm Pin=34dBm Pin=26dBm Pin=38dBm r P 160 140 120 100 80 60 40 20 0 Total Power Dissipasion [W] im l e Pin=30dBm a in 21 23 ry 31 33 35 37 39 Input Power [dBm] 50 40 30 20 10 0 25 27 29 Power Derating Curve 0 50 100 150 200 250 300 Case Temperature [o C] Edition 1.2 Dec. 2005 2 ES/EGN26A090IV High Voltage - High Power GaN-HEMT S-Parameters @VDS=50V, IDS=500mA, f=1 to 4 GHz, Zl = Zs = 50 ohm +50j +25j 10 25 50 +100j +10j 0 2.6GHz 2.6GHz -10j -25j -50j -100j r P +90 2.6GHz im l e 2.6GHz 180 10 Scale for |S21| Freq [GHz] 1.0 1.1 1.2 1.3 1.4 +250j 1.5 1.6 1.7 1.8 1.9 2.0 -250j 2.1 2.2 2.3 S11 2.4 2.5 S22 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 0 3.9 4.0 ry a in S11 MAG ANG 0.943 165.0 0.943 162.9 0.940 160.3 0.935 157.5 0.928 154.6 0.925 150.6 0.913 146.1 0.894 141.3 0.869 135.0 0.833 127.3 0.776 116.9 0.692 103.3 0.568 83.3 0.402 49.8 0.255 -19.0 0.296 -100.5 0.371 -138.8 0.406 -159.7 0.401 -175.1 0.357 170.2 0.272 154.9 0.139 134.9 0.046 -28.8 0.242 -67.5 0.425 -87.3 0.568 -103.1 0.665 -116.5 0.732 -127.4 0.769 -137.1 0.795 -145.2 0.814 -152.3 S21 MAG ANG 0.650 -13.1 0.616 -18.2 0.605 -23.0 0.619 -28.1 0.662 -33.3 0.724 -39.5 0.828 -46.4 0.981 -54.7 1.221 -64.3 1.577 -75.6 2.116 -90.6 2.998 -109.6 4.387 -134.6 6.406 -169.4 8.084 144.3 7.474 95.7 5.713 58.1 4.410 31.2 3.574 9.4 3.057 -9.9 2.752 -28.8 2.545 -48.8 2.377 -69.9 2.165 -91.9 1.911 -113.2 1.663 -132.7 1.463 -149.5 1.331 -164.6 1.254 -179.5 1.254 165.6 1.324 147.4 S12 MAG ANG 0.001 1.1 0.001 6.6 0.001 -17.8 0.001 12.1 0.001 27.6 0.001 -5.3 0.001 4.0 0.001 -2.7 0.002 -14.6 0.002 -24.3 0.003 -48.8 0.004 -69.2 0.006 -101.3 0.010 -137.9 0.014 176.6 0.014 127.7 0.013 96.2 0.011 72.4 0.010 56.3 0.009 40.2 0.009 24.7 0.009 4.9 0.009 -13.8 0.008 -37.1 0.008 -58.2 0.007 -74.9 0.007 -90.9 0.007 -106.6 0.008 -117.0 0.009 -122.4 0.013 -136.3 S22 MAG ANG 0.905 176.8 0.899 176.2 0.897 175.3 0.906 174.2 0.910 172.9 0.912 171.2 0.911 169.2 0.910 166.8 0.902 164.1 0.895 160.8 0.875 156.4 0.839 150.9 0.762 142.5 0.588 129.2 0.228 127.2 0.333 -146.4 0.606 -155.0 0.739 -165.1 0.805 -172.8 0.843 -178.7 0.864 176.2 0.878 171.3 0.884 166.5 0.887 160.9 0.886 155.4 0.877 149.3 0.864 142.6 0.841 135.2 0.814 125.4 0.771 112.8 0.710 93.1 S12 0.1 Scale for |S 12| -90 S21 Edition 1.2 Dec. 2005 3 ES/EGN26A090IV High Voltage - High Power GaN-HEMT IV Package Outline Metal-Ceramic Hermetic Package r P im l e ry a in PIN ASSIGNMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit : mm Edition 1.2 Dec. 2005 4 |
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