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| ESJC35-08 HIGH VOLTEGE DIODE ESJC35 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. O 0.78 (8.0kV/410mA ) Outline Cathode Mark Drawings Type Name, Lot No. O 4.0 27MIN. 7.5 27MIN. Unit : mm Features Low VF High reliability . High speed switching Cathode Mark Cathode Mark (White) Applications Rectification for X-ray generator high voltage power supply Maximum Ratings and Characteristics Absolute Maximum Ratings Items Repetitive Peak Reverse Voltage Average Forward Current Non-repetitive Peak Forward Current Allowable Junction Temperature Storage Temperature Range Symbols VRRM Io IFSM Tj Tstg Toil=25C, Resistive Load 50Hz.sine harf-wave peak value. One-shot.Ta=25C Conditions ESJC35-08 8.0 410 10 120 -40 to +120 Units kV mA A C C Electrical Characteristics (Ta=25C Unless otherwise specified ) Items Maximum Forward Voltage Drop Maximum Reverse Current Symbols VF IR1 IR2 Minimum Reverse Recovery Time trr Conditions at 25C, IF=1A at 25C, VR=8.0kV ESJC35-08 20 2 10 0.15 s Units V A at 100C, VR=8.0kV at 25C, IF=IR=100mA 90%Recovery ESJC35 (8.0kV/410mA ) Characteristics Forward characteristic [VF-IF] Typical 1000 10 Reverse characteristic [VR-IR] Typical Toil=100C Ta=25C 1 IF (mA) IR (A) 0.1 0 5 10 15 20 0.01 2 3 4 5 6 7 8 100 10 VF (V) VR (kV) Avalanche characteristic [Vz-Iz] Typical 400 Reverse recovery time characteristic [Ta-trr] Typical IF/IR=100/100mA 90% recovery 350 Ta=25C 100 300 Iz (A) 10 trr (ns) 250 200 150 100 1 50 20 40 60 80 100 7 8 9 10 11 12 Vz (kV) Ta (C) |
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