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| 1/2 Watt, High Linearity InGaP HBT Amplifier ECP052D Product Features * 800 - 1000 MHz * +28.5 dBm P1dB * +44 dBm Output IP3 * 18 dB Gain @ 900 MHz * Single Positive Supply (+5V) * 16-pin 4x4mm Pb-free/green/ RoHS-compliant QFN package Product Description The ECP052D is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +44 dBm OIP3 and +28.5 dBm of compressed 1dB power. It is housed in an industry standard in a lead-free/ green/RoHS-compliant 16-pin 4x4mm QFN surfacemount package. All devices are 100% RF and DC tested. The ECP052D is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the ECP052D to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. Functional Diagram Vbias N/C 14 16 Vref 1 N/C 2 RF IN 3 N/C 4 5 N/C 6 N/C 7 N/C 8 N/C 15 N/C 13 12 N/C 11 RF OUT 10 RF OUT 9 N/C N/C Applications * Final stage amplifiers for Repeaters * Mobile Infrastructure Function Vref RF Input RF Output Vbias GND N/C or GND Pin No. 1 3 10, 11 16 Backside Paddle 2, 4-9, 12-15 Specifications Parameter Operational Bandwidth Test Frequency Gain Output P1dB Output IP3 (2) Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR, 1960 MHz Units Min MHz MHz dB dBm dBm MHz dB dB dB dBm dBm dBm dB mA V 200 800 Typ 850 17 +28 +44 900 17.8 18 7 +28.7 +43 +23 7 250 +5 Max 1000 15.5 +27 +42.5 Noise Figure Quiescent Current, Icq Device Voltage, Vcc 300 1. Test conditions unless otherwise noted: 25 C, Vsupply = +5 V, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 50 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 12mA of current when used with a series bias resistor of R1=100. (ie. total device current typically will be 262 mA.) Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature Rating -40 to +85 C -65 to +150 C +22 dBm +8 V 400 mA 2W +250 C Ordering Information Part No. ECP052D-G ECP052D-PCB900 Description 1/2-Watt, High Linearity InGaP HBT Amplifier (lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package) 900 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 1 of 4 December 2006 1/2 Watt, High Linearity InGaP HBT Amplifier ECP052D Gain / Maximum Stable Gain DB(|S(2,1)|) Typical Device Data S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C, unmatched 50 ohm system) S11 6 0. 2. 0 0. S22 Swp Max 1000MHz 6 1.0 40 4 Swp Max 1000MHz 2. 0 0.8 0 3. 30 Gain (dB) 25 20 0.2 0 0.2 0 4. 5.0 0.2 10.0 10.0 15 10 -0. 2 -1 0. 0 2 -0. 5 0 50 550 1050 1550 Frequency (MHz) 2050 2500 -0 .4 -0 .4 .0 -2 -0 .6 .6 -0.8 -0 Swp Min 50MHz -0.8 - 0 2. Swp Min 50MHz Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The return loss plots are shown from 50 - 1000 MHz, with markers placed at .05, 0.1 and 0.2 - 1 GHz in 0.2 GHz increments. S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -2.08 -1.60 -1.55 -1.57 -1.76 -1.97 -2.43 -3.12 -4.43 -7.08 -14.24 -16.59 -7.06 -3.67 -2.10 -1.47 -1.06 -167.47 -176.25 177.39 168.97 160.42 153.20 145.24 137.49 127.55 115.61 109.36 -142.19 -146.15 -163.93 179.98 166.40 153.09 25.81 21.21 17.43 14.31 13.39 12.83 12.08 11.67 11.46 11.47 11.30 10.56 8.89 6.53 3.89 1.31 -1.27 121.88 119.02 119.68 113.15 106.07 91.91 78.04 64.05 48.41 30.39 7.39 -17.73 -43.22 -65.55 -83.84 -98.81 -112.21 -1.0 -34.39 -33.70 -34.57 -35.33 -33.51 -33.13 -30.97 -30.23 -30.25 -29.61 -28.18 -28.42 -29.33 -30.99 -32.78 -36.21 -36.60 20.06 10.30 -0.55 -4.58 -4.12 -16.00 -28.08 -36.11 -46.25 -62.25 -82.41 -109.55 -134.21 -158.32 179.11 169.00 140.50 -2.85 -3.46 -3.77 -3.57 -1.91 -1.70 -2.05 -2.30 -2.36 -2.41 -2.06 -1.64 -1.22 -1.18 -1.43 -1.39 -1.60 -1.0 -128.57 -152.91 -165.97 -165.83 -168.71 -177.38 177.99 175.47 174.66 173.61 171.18 168.93 162.93 155.95 149.66 144.07 138.31 Application Circuit PC Board Layout Circuit Board Material: .014" Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning Shunt capacitors - C8, C9 and C10. The markers and vias are spaced in .050" increments. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 4 December 2006 -4 .0 -5. 0 10.0 -3 . 0 0.4 0.6 0.8 1.0 2.0 4.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 3.0 5.0 0 0. 4 35 DB(GMax()) 0. 0. 8 1.0 3. 0 4. 0 5.0 10.0 -10.0 -4 .0 -5. 0 -3 .0 1/2 Watt, High Linearity InGaP HBT Amplifier ECP052D 900 MHz 17.5 dB -18 dB -7 dB +28.7 dBm +43 dBm 900 MHz Application Circuit (ECP052D-PCB900) Typical RF Performance at 25 C Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 (+11 dBm / tone, 1 MHz spacing) ID=C5 C=1000 pF ID=R2 R=22 Ohm ID=C4 C=1e7 pF ID=C7 C=1000 pF ID=R1 R=100 Ohm Vsupply = +5V +5.6V Zener ID=C6 C=10 pF 16 1 15 14 13 12 Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) ID=C1 C=22 pF ID=R3 R=51 Ohm ID=C11 R=0 Ohm ID=C2 C=22 pF 2 ID=ECP52D 11 ID=L1 L=33 nH size 1008 +23 dBm 7 dB +5 V 250 mA ID=C3 C=56 pF 3 10 Noise Figure Device / Supply Voltage Quiescent Current 4 9 The transmission line lengths are from the edge of the device pins to the center of the component. All passive components are size 0603 unless otherwise noted. 5 6 7 8 TLINP ID=TL2 Z0=50 Ohm L=600 mil Eeff=3.16 Loss=0 F0=0 GHz ID=C9 C=2 pF The center of C9 should be placed at silkscreen marker '12' on the WJ evaluation board. S21 vs Frequency 20 18 S 2 1 (d B ) S 1 1 (d B ) 16 14 12 10 840 +25C +85C -40C 860 880 900 920 940 0 -5 -10 -15 -20 -25 -30 -35 840 860 S11 vs. Frequency 0 -5 -10 S 2 2 (d B ) -15 -20 -25 -30 940 -35 840 S22 vs. Frequency +25C +85C -40C 880 900 920 +25C +85C -40C 860 880 900 920 940 Frequency (MHz) Frequency (MHz) Frequency (MHz) Noise Figure vs. Frequency 10 8 P 1 d B (d B m ) N F (d B ) 6 4 2 0 840 +25C +80C -40C 860 880 900 920 940 20 840 860 30 28 26 24 22 P1 dB vs. Frequency -40 -45 -50 -55 -60 -65 -70 -75 -80 18 19 ACPR vs. Channel Power IS-95, 9 Ch. Fwd, 885KHz Meas BW, 900 MHz +25C +85C -40C A C P R (d B m ) +25C +85C -40C 20 21 22 23 24 880 900 920 940 Frequency (MHz) Frequency (MHz) Output Channel Power (dBm) OIP3 vs. Temperature freq. = 900, 901 MHz, +13 dBm /tone OIP3 vs. Output Power freq. = 900, 901 MHz, +25C OIP3 vs. Frequency +25, +13 dBm / tone 45 43 O I P 3 (d B m ) 45 O IP 3 (d B m ) 45 43 41 39 37 35 840 43 O I P 3 (d B m ) 41 39 37 35 -40 -15 10 35 Temperature (C) 60 85 41 39 37 35 8 10 12 14 16 18 20 Output Power (dBm) 860 880 900 920 940 Frequency (MHz) Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 4 December 2006 1/2 Watt, High Linearity InGaP HBT Amplifier ECP052D The Communications Edge TM Product Information ECP052D-G Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper. Outline Drawing Product Marking The component will be marked with an "E052G" designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an "ECP052D" designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the "Application Notes" section. E052G ESD / MSL Information Land Pattern ESD Rating: Value: Test: Standard: Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. 2. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. Damage to the device can occur without the use of one. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. RF trace width depends upon the PC board material and construction. Use 1 oz. Copper minimum. All dimensions are in millimeters (inches). Angles are in degrees. 3. 4. 5. 6. 7. 8. Thermal Specifications Parameter Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) MTTF vs. GND Tab Temperature 100000 -40 to +85 C 62 C / W 162 C Notes: 1. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. Tj is a function of the voltage at pins 10 and 11 and the current applied to pins 10, 11, and 16 and can be calculated by: Tj = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 250 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. MTTF (million hrs) Rating 10000 1000 100 60 70 80 90 100 110 Tab Temperature ( C) 120 Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 4 April 2006 |
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