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POWER TRANSISTOR E13002
SWITCHING REGULATOR APPLICATION
* High speed switching * Suitable for switching regulator and motor control * Case : TO-92 molded plastic body
A
DIM
SEATING PLANE
TO-92
INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 ---
R P F L
B
K
G H V
D J NC
A B C D F G H J K L N P R V
NPN SILICON TRANSISTOR FEATURES
Tc=25 C unless otherwise specified
o
123
N
Parameter
Power dissipation Collector current Operating and storage junction temperature range
Symbol
PCM ICM TJ, TSTG
o
Value
1.0 1.0 -55 C to +150 C
o
UNIT
W A
o
C
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time
Tc=25 C unless otherwise specified
o
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) VCEsat VBEsat fT tf ts
Test conditions
IC=100i , IE=0 A IC=1mA , IB=0 IE=100i , IC=0 A VCB=600V , IE=0 VEB=6V , IC=0 VCE=10V , IC=100mA VCE=10V , IC=200mA VCE=10V , IC=10mA IC=200mA , IB=40mA IC=200mA , IB=40mA VCE=10V , IC=100mA f=1MHz IC=1A , IB1=-IB2=0.2A , VCC=100V
MIN
600 400 6
MAX
UNIT
V V V
100 100 8 9 6 0.8 1.1 5 0.5 2.5 60 40
i A i A
V V MHz
i S i S
RATINGS AND CHARACTERISTIC CURVES E13002

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