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| ADVANCE TECHNICAL INFORMATION DSEE30-12A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 30 ns VRRM V 1200 VRRM V 600 Type TO-247 AD DSEE30-12A 1 2 3 1 2 3 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg TL Ptot Md Weight Conditions TC = 90C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 1.3 A; L = 180 H VA = 1.5* VR typ.; f = 10 kHz; repetitive Maximum Ratings 60 30 200 0.2 0.1 -55...+175 175 -55...+150 A A A mJ Features Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 A C C C C W Nm/ lb.in. g 1.6 mm (0.063 in) from case for 10 s TC = 25C Mounting Torque typical 260 165 0.9/6 2 Applications Symbol IR VF RthJC RthCH trr IRM Conditions TVJ = 25C VR = VRRM TVJ = 150C V R = VRRM IF = 30 A; TVJ = 125C TVJ = 25C Characteristic Values typ. max. 200 2 1.75 2.5 0.9 0.25 A mA V V K/W K/W ns A Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages IF = 1 A; -di/dt = 200 A/s; VR = 30 V VR = 100 V; IF = 50 A; -diF/dt = 100 A/s TVJ = 100C 30 4 Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Notes Notes: Data given for TVJ = 25OC and per diode unless otherwise specified Diodes connected in series Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse test: pulse Width = 300 s, Duty Cycle < 2.0 % Please see DSEP 30-06A Data Sheet for characteristic curves. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2002 IXYS All rights reserved DS98962 (10/02) DSEE30-12A TO-247 AD Outline P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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