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| DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS DCR506-3 THRU DCR506-8 TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 100 to 600 Volts CURRENT - 6.0 Amperes Description * Driven directly with IC and MOS device * Feature proprietary, void-free glass passivated chips * Available in voltage ratings from 100 to 600 volts * Sensitive gate trigger current * Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors TO-220AB .185(4.70) .173(4.40) .055(1.39) .045(1.15) .295(7.49) .220(5.58) Pinning 1 = Cathode, 2 = Anode, 3 = Gate .151 Typ (3.83) .405(10.28) .380(9.66) Absolute Maximum Ratings(TA=25oC) Characteristic Peak Repetitive Off-State Voltage and Reverse Voltage DCR506-3 DCR506-4 DCR506-6 DCR506-8 Symbol VDRM, VRRM IT(RMS) ITSM IGM PGM PG(AV) TJ TSTG Rating 100 200 400 600 6.0 40 1.0 0.5 0.1 -40 to +110 -40 to +150 Unit V .625(15.87) .570(14.48) .350(8.90) .330(8.38) 1 2 3 .640 Typ (16.25) On-State RMS Current (TA=57oC, 180o Conduction Angles) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60Hz) Forward Peak Gate Current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Operating Junction Temperature Storage Temperature A A A W W o o .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) .024(0.60) .014(0.35) C C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Peak Repetitive Forward or Reverse Off-State Blocking Current Peak Forward On-State Voltage Continuous DC Gate Trigger Current Continuous DC Gate Trigger Voltage DC Holding Current (Ratings at 25 C ambient temperature unless otherwise specified) Symbol TJ=25oC TJ=110oC IDRM, IRRM VTM IGT VGT IH dv/dt Tgt RJC Min Typ 8.0 2.2 2.2 Max 10 250 2.0 200 1.0 6.0 Unit A V A V mA V/S sec o Test Conditions VAK=Rated VDRM or VRRM RGK=1K ITM=6A Peak VAK=7V DC, RL=100 VAK=7V DC, RL=100 RGK=1K RGK=1K IGT=10mA - Critical Rate-of-Rise of Off-State Voltage Gate Controlled Turn-on Time(tD+tR) Thermal Resistance, Junction to Case C/W |
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