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| PROCESS Small Signal Transistor NPN - High Voltage Transistor Chip CP310 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 16,880 PRINCIPAL DEVICE TYPES 2N3439 2N3440 CMPTA42 CMPTA44 CMPT6517 CXTA44 CZTA42 CZTA44 MPSA42 MPSA44 EPITAXIAL PLANAR 26 x 26 MILS 9.0 MILS 6.1 x 4.9 MILS 5.2 x 5.2 MILS Al - 30,000A Au - 18,000A BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central TM PROCESS CP310 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) |
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