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| CMPDM7002A N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002A is special version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This special device offers low rDS(ON) and low VDS (ON). Marking Code is C702A. SOT-23 CASE MAXIMUM RATINGS (TA=25C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VDG VGS ID IS IDM ISM PD TJ,Tstg JA UNITS V V V mA mA A A mW C C/W UNITS nA nA A A mA V V V V mmhos pF pF pF ns ns V 60 60 40 280 280 1.5 1.5 350 -65 to +150 357 MAX 100 100 1.0 500 2.5 1.0 0.15 2.0 3.5 3.0 5.0 5.0 50 25 20 20 1.2 ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN VGS=20V, VDS=0V IGSSF IGSSR VGS=20V, VDS=0V IDSS VDS=60V, VGS=0V IDSS VDS=60V, VGS=0V, Tj=125C ID(ON) VGS=10V, VDS 2VDS(ON) 500 BVDSS VGS=0V, ID=10A 60 VGS(th) VDS=VGS, ID=250A 1.0 VDS(ON) VGS=10V, ID=500mA VDS(ON) VGS=5.0V, ID=50mA rDS(ON) VGS=10V, ID=500mA rDS(ON) VGS=10V, ID=500mA, Tj=125C rDS(ON) VGS=5.0V, ID=50mA rDS(ON) VGS=5.0V, ID=50mA, Tj=125C gFS VDS 2VDS(ON), ID=200mA 80 Crss VDS=25V, VGS=0, f=1.0MHz Ciss VDS=25V, VGS=0, f=1.0MHz Coss VDS=25V, VGS=0, f=1.0MHz ton VDD=30V, VGS=10V, ID=200mA, toff RG=25, RL=150 VSD VGS=0V, IS=400mA R0 ( 05-December 2001) Central TM CMPDM7002A N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET Semiconductor Corp. SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Source 3) Drain Marking Code: C702A R0 ( 05-December 2001) |
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