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CMHD3595 LOW LEAKAGE SILICON DIODE
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMHD3595 is a Silicon Diode, manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high conductance applications requiring low leakage. Marking Code is C95. SOD-123 CASE MAXIMUM RATINGS: (TA=25C) Peak Repetitive Reverse Voltage Peak Working Reverse Voltage Average Forward Current Forward Steady-State Current Recurrent Peak Forward Current Peak Forward Surge Current (1.0s pulse) Peak Forward Surge Current (1.0s pulse) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg JA -65 to +150 312.5 C C/W
SYMBOL VRRM VRWM IO IF if IFSM IFSM PD
150 125 150 225 600 500 4.0 400
UNITS V V mA mA mA mA A mW
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) MIN MAX SYMBOL TEST CONDITIONS BVR IR IR IR IR VF VF VF VF VF VF CT trr IR=100A VR=125V VR=125V, TA=125C VR=125V, TA=150C VR=30V, TA=125C IF=1.0mA IF=5.0mA IF=10mA IF=50mA IF=100mA IF=200mA VR=0, f=1.0MHz VR=3.5V, If=10mA, RL=1.0k 150 1.0 500 3.0 300 0.69 0.77 0.80 0.88 0.92 1.00 8.0 3.0
UNITS V nA nA A nA V V V V V V pF s R2 ( 2-November 2001)
0.54 0.62 0.65 0.75 0.79 0.83
Central
TM
CMHD3595 LOW LEAKAGE SILICON DIODE
Semiconductor Corp.
SOD-123 CASE - MECHANICAL OUTLINE
A D 1 B
E
F
G C
2 H R3
SYMBOL A B C D E F G H
DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.037 0.053 0.95 1.35 0.005 0.12 0.008 0.20 0.055 0.071 1.40 1.80 0.098 0.112 2.50 2.84 0.140 0.154 3.55 3.90 0.010 0.25 0.020 0.028 0.50 0.70 SOD-123 (REV:R3)
LEAD CODE: 1) Cathode 2) Anode
MARKING CODE: C95
R2 ( 2-November 2001)

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