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MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE INSULATED TYPE
A B TC Measured Point E
K(4 - Mounting Holes)
H D C F CM J H
3 - M6 NUTS
R
R
G
TAB #110, t = 0.5
M
P
M
P
M
N
L
Q
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: UPS Forklift
G2 E2
C2E1
E2
C1
E1 G1
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 4.33 3.660.01 3.15 2.440.01 0.55 0.86 0.94 0.24 Millimeters 110.0 93.00.25 80.0 62.00.25 14.0 21.75 24.0 6.0 Dimensions J K L M N P Q R Inches 0.59 0.26 Dia. 1.14 +0.04/-0.02 0.71 0.33 0.28 0.83 0.98 Millimeters 15.0 6.5 Dia. 29 +1.0/-0.5 18.0 8.5 7.0 21.0 25.0
Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM350DU-5F is a 250V (VCES), 350 Ampere Trench Gate Design Dual IGBT Module.
Type CM Current Rating Amperes 350 VCES Volts (x 50) 5
Sep.1998
MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C, Tj 150C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM350DU-5F -40 to 150 -40 to 125 250 20 350 700 350 700* 960 1.96 ~ 2.94 1.96 ~ 2.94 520 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts N*m N*m Grams Vrms
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VCES, VCE = 0V IC = 35mA, VCE = 10V IC = 350A, VGE = 10V, Tj = 25C IC = 350A, VGE = 10V, Tj = 125C Total Gate Charge Emitter-Collector Voltage* VCC = 100V, IC = 350A, VGE = 10V IE = 350A, VGE = 0V Min. - - 3.0 - - - - Typ. - - 4.0 1.2 1.10 1320 - Max. 1 0.5 5.0 1.7 - - 2.0 Units mA A Volts Volts Volts nC Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 100V, IC = 350A, VGE1 = VGE2 = 10V, RG = 7.1, Resistive Load Switching Operation IE = 350A, diE/dt = -700A/s IE = 350A, diE/dt = -700A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 5.7 Max. 99 4.5 3.4 1100 2400 900 500 300 - Units nF nF nF ns ns ns ns ns C
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per Free-Wheel Diode Per Module, Thermal Grease Applied Min. - - - Typ. - - 0.010 Max. 0.17 0.28 - Units C/W C/W C/W
Sep.1998
MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE INSULATED TYPE
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
700
COLLECTOR CURRENT, IC, (AMPERES)
700
6 8
COLLECTOR CURRENT, IC, (AMPERES)
2.0
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 15V 10
5.75
Tj = 25oC
560 420
560
5.5
VCE = 10V Tj = 25C Tj = 125C
1.6 1.2 0.8 0.4
VGE = 10V Tj = 25C Tj = 125C
420
280 140
5.25
280 140 0
5.0 4.75 4.5
0 0 1 2 3
0 0 2 4 6 8 10 0 140 280 420 560 700
GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)
4
5
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
7 5
EMITTER CURRENT, IE, (AMPERES)
CAPACITANCE VS. VCE (TYPICAL)
5
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25C
Tj = 25C
CAPACITANCE, Cies, Coes, Cres, (nF)
102
Cies
4 3 2 1
3 2
IC = 700A
101
Coes
102
7 5 3 2
IC = 350A
100
Cres
IC = 140A
101
VGE = 0V
0 0 3 6 9 12 15
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
7
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10-1 10-1
100
101
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -700A/sec Tj = 25C
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
104
REVERSE RECOVERY TIME, trr, (ns)
103
103
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 350A
16 12 8 4
SWITCHING TIME, (ns)
103
td(off) td(on) tf
VCC = 50V
trr
102
Irr
102
VCC = 100V
102
tr
VCC = 100V VGE = 10V RG = 7.1 Tj = 125C
101 101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
101 101
102
EMITTER CURRENT, IE, (AMPERES)
101 103
0 0 0.7 1.4 2.1 2.8
GATE CHARGE, QG, (nC)
Sep.1998
MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE INSULATED TYPE
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE)
10-3 101
10-2
10-1
100
101
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
10-3 101
10-2
10-1
100
101
100
Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.17C/W
100
Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.28C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
Sep.1998

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