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GaAs MMIC
Data Sheet
* * * Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55%
CGY 93
MW-16
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type CGY 93
Marking CGY 93
Ordering Code (taped) t.b.d.
Package MW-16
Maximum Ratings Positive supply voltage Negative supply voltage Supply current stage 1 Supply current stage 2 Channel temperature Storage temperature RF input power Total power dissipation (CW, Tc 83 C) Tc: Temperature at soldering point Pulse peak power dissipation duty cycle 12.5%, ton = 0.577 ms
Symbol
Value 7.0 - 4.0 0.6 3.5 150 - 55 ... + 150 20 7.5 17
Unit V V A A C C dBm W W
VD VG ID1 ID2 TCh Tstg Pin Ptot PPuls
Thermal Resistance Junction-Case
Data Book
Symbol
Value 9.0
Unit K/W
03.00
RthJCh
1
CGY 93
VG1
8 7
VG2
2 CGY 93 12, 13, RF OUT / VD2 14, 15
RF IN
4
VD1
17 GND Backside
EHT08856
Figure 1 Pin Out Pin # 1 2 3 4 5 6 7 8 9 10 11 12,13,14,15 16 (17)
Functional Block Diagram
Name NC VG2 NC VD1 NC NC RFin VG1 NC NC NC VD2/RFout NC GND
Configuration - Gate voltage stage 2 - Drain Voltage stage 1 - - RF input Gate Voltage stage 1 - - - Drain voltage stage 2/RF output - Ground (backside of MW-16 housing)
Data Book
2
03.00
CGY 93
Electrical Characteristics TA = 25 C, pulsed with a duty cycle of 12.5%, ton = 577 s adjust VG1 = VG2 for ID0 = 1.6 A (ID0: drain current without RF) Parameters Symbol Limit Values min. Frequency range typ. - 1.6 1.2 33.0 20.5 32.5 34.5 36.3 53 55 max. 915 - - - - - - - - - MHz A A dB dB dBm dBm dBm % % Unit Test Conditions - -
f IDHF G GP Pout Pout Pout

880 - - - - 32.1 34.0 35.8 47 50
Supply current without RF ID0 Supply current with RF Small signal gain Power gain Output Power Output Power Output Power Overall Power added Efficiency Overall Power added Efficiency Noise Power in RX (935 - 960 MHz) Harmonics
Pin = 12 dBm VD = 2.8 V, Pin = - 10 dBm VD = 2.8 V, Pin = 12 dBm VD = 2.8 V, Pin = 12 dBm VD = 3.5 V, Pin = 12 dBm VD = 4.8 V, Pin = 12 dBm VD = 2.8 V, Pin = 12 dBm VD = 3.5 V or VD = 4.8 V, Pin = 12 dBm Pin = 12 dBm, Pout = 32.5 dBm,
100 kHz RBW
NRX
-
- 80
-
dBm
H (2 f0) H (3 f0))
-
40 40 -
43 43
- -
dBc
VD = 2.8 V, Pin = 10 dBm, Pout = 32.5 dBm
-
Stability all spurious outputs < - 60 dBc, VSWR load, all phase angles Input VSWR
10 : 1 -
-
-
-
2:1
2.2 : 1 -
VD = 2.8 V
Data Book
3
03.00
CGY 93
CGY 93, @ 2.8 V, f = 900 MHz VG = - 2.1 V, pulsed with a duty cycle of 12.5%, ton = 0.577 ms
36 dBm 34 33 32 POUT 31 30 PAE 29 28 27 26 25 24 23 22 21 20 -5 -3 -1 1 3 5 7
EHT08857
CGY 93, @ 4.8 V, f = 900 MHz VG = - 2.1 V, pulsed with a duty cycle of 12.5%, ton = 0.577 ms
38 dBm 36 35 34 33 32 31 30 29 28 27 26 25 24 0 2 4 6 8 10 PAE
EHT08859
POUT
80 % PAE
70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 9 11 dBm 15
POUT
70 % PAE 60 55 50 45 40 35 30 25 20 15 10 5
POUT
0 12 dBm 15
PIN
PIN
CGY 93, @ 3.5 V, f = 900 MHz VG = - 2.1 V, pulsed with a duty cycle of 12.5%, ton = 0.577 ms
36 dBm 34 33 POUT 32 31 30 29 PAE 28 27 26 25 24 23 22 21 20 -5 -3 -1 1 3 5 7
EHT08858
CGY 93 - Pout vs. Drain Voltage @ 900 MHz, Pin = 12 dBm
38 dBm POUT 37 36 35 34 33 32 31 30 2.5 2.9 3.3 3.7 4.1 4.5 4.9
EHT08860
POUT
80 % PAE
70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 9 11 dBm15
V 5.5
PIN
VD
Data Book
4
03.00
CGY 93
GSM Application Board CGY 93
VG1
Test Board CGY 93 100
VG2
VD2
4.7 F
100 1 nF
VG1
VG2
CGY 93 12 nH
RF IN 6.8 pF
RF IN
RF OUT / VD2
RF OUT 10 pF 1.8 pF
5.6 pF
VD1
1 nF
GND
50 Transmission Line
VD1
EHT08862
Figure 2
CGY 93
VD1
VG2
VD2
GND
1 nF
4.7 F
100
GSM POWER AMPLIFIER
12 nH
1 nF 10 pF
OUT
1 nF
6.8 pF
VG1
100
5.6 pF
1 nF
1.8 pF
IN
CGY 93
EHT08863
Figure 3
Data Book 5 03.00
CGY 93
Determination of Permissible Total Power Dissipation for Continuous and Pulse Operation The purpose of the following procedure is to prevent the junction temperature TJ from exceeding the maximum allowed data sheet value. TJ is determined by the dissipated power and the thermal properties of the device and board. The dissipated power is the power which remains in the chip and heats the device and junction. It does not contain RF signals which are coupled out consistently. This is a two step approach: For a pulsed condition both steps are needed. For CW and DC step one is sufficient. Step 1: Continuous Wave DC Operation For the determination of the permissible total power dissipation Ptot-DC from the diagram below it is necessary to obtain the temperature of the case TC first. Because the MW-16 heat sink is not easily accessible to a temperature measurement the thermal resistance is defined as RthJC using the case temperature TC. There are two cases: * When RthCA (case to ambient) is not known: Measure TC in operation of device and board at the upper side of the case where the temperature is highest. Small thermoelements (< 1 mm, thin wires, thermopaste) or thermopapers with low heat dissipation are well suited.
Thermoelement for TCASE
Case (C) Junction (J) Soldered Heatsink PCB
Ambient (A)
EHT08701
Figure 4
Measurement of Case Temperature TC
Data Book
6
03.00
CGY 93
*
When RthCA is already known. Calculate the case temperature as TC = Pdiss x RthCA + TA Graph for Ptot-DC
Ptot-DC in mW
10000 mW 8000 7000 6000 5000 4000 3000 2000 1000 0 0 20 40 60 80 100 120 C 160
EHT08865
Ptot DC
TC
Step 2: Pulsed Operation For the calculation of the permissible pulse load Ptot-max the following formula is applicable:
Ptot-max = Ptot-DC x Pulse Factor = Ptot-DC x (Ptot-max/Ptot-DC)
Use the values for Ptot-DC as derived from the above diagram and for the Pulse Factor = Ptot-max/Ptot-DC from the following diagram to get a specific value.
Data Book
7
03.00
CGY 93
Pulse Factor Ptot-max/Ptot-DC = f(t_p)
10
EHT08866
Ptot max Ptot DC
tp
D= T
tp
T
D=
0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
5
1 10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Ptot-max should not exceed the absolute maximum rating for the dissipated power PPulse = "Pulse peak power" = 17 W
Reliability Considerations The above procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which correspond to the maximum allowed junction temperature. For best reliability keep the junction temperature low. The following formula allows to track the individual contributions which determine the junction temperature.
TJ =
Junction temperature (= channel temperature)
(Ptot-diss/Pulse Factor x
RthJC) +
TC
Temperature of the case, measured or calculated, device and board operating
Power dissipated in the chip, Rth of device divided by the applicable from junction pulse factor (= 1 for DC and to case CW). It does not contain decoupled RF- power
Data Book
8
03.00
CGY 93
Package Outlines MW-16 (Special Package)
1.6 max 7 D
1)
0.1 max 1.4 0.1 C
0.2
M
A-B D C B
0.350.05
2)
7 x 0.8 = 5.6
9
7
1)
4x 0.2 A-B D H 16x 0.2 D
+0.05 0.15 -0.06
A Exposed solderable heatsink o4.57 0.05
0.8
0...7
C 16x 0.1 C
GPW05969
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Book 9
Dimensions in mm 03.00

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