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| BYT40Y 1.0A HIGH VOLTAGE GLASS BODY RECTIFIER Features * * * Hermetically Sealed Glass Body Construction High Voltage to 1600V with Low Leakage Surge Overload Rating to 25A Peak A B A Mechanical Data * * * * * Case: DOT-30B, Glass Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Marking: Type Number Weight: 0.50 grams (approx.) C D DOT-30B Dim A B C D Min 26.0 3/4 3/4 3/4 Max 3/4 4.2 0.82 3.0 All Dimensions in mm Maximum Ratings and Electrical Characteristics Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TA = 40C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) Forward Voltage Peak Reverse Leakage Current at Rated DC Blocking Voltage Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Typical Thermal Resistance Junction to Ambient (Note 1) Operating and Storage Temperature Range @ IF = 1.0A @ Tj = 25C @ Tj = 150C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM trr Cj RqJA Tj, TSTG @ Tj = 25C unless otherwise specified BYT40Y 1600 1130 1.0 25 1.3 5.0 150 3.0 6.0 60 -55 to +150 Unit V V A A V mA ms pF K/W C Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 10mm from the case. 2. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See Figure 5. 3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. DS30032 Rev. B-5 1 of 2 BYT40Y 1.2 10 IO, AVERAGE RECTIFIED CURRENT (A) 1.0 IF, INSTANTANEOUS FWD CURRENT (A) 1 0.8 0.6 0.1 Tj = 25C 0.4 0.2 0.01 0 0.001 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 1 Forward Current Derating Curve 0 0.4 0.8 1.2 1.6 2.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 1000 Cj, JUNCTION CAPACITANCE (pF) 14 12 10 8 6 4 2 f = 1.0MHz Tj = 25C IR, REVERSE CURRENT (A) 100 10 1 0.1 VR = VRRM 0 0 25 50 75 100 125 150 0.1 1 10 100 Tj, JUNCTION TEMPERATURE (C) Fig. 3 Typical Reverse Characteristics VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance trr 50 NI (Non-inductive) Device Under Test 50V DC Approx 10 NI +0.5A (-) Pulse Generator (Note 2) (+) (-) 0A -0.25A 1.0 NI Oscilloscope (Note 1) (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50. -1.0A Set time base for 50/100 ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit DS30032 Rev. B-5 2 of 2 BYT40Y |
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