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| BYS11-90 Vishay Semiconductors Schottky Barrier Rectifier Features D D D D D High efficiency Low power losses Very low switching losses Low reverse current High surge capability 15 811 Applications Polarity protection Low voltage, high frequency rectifiers Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage= Repetitive peak reverse voltage Peak forward surge current Average forward current Junction and storage temperature range Test Conditions Type Symbol VR= VRRM IFSM IFAV Tj=Tstg Value 90 30 1.5 -55...+150 Unit V A A tp=10ms, half sinewave C Maximum Thermal Resistance Tj = 25_C Test Conditions TL=constant mounted on epoxy-glass hard tissue Junction ambient mounted on epoxy-glass hard tissue, 50mm2 35mm Cu mounted on Al-oxid-ceramic (Al2O3), 50mm2 35mm Cu Parameter Junction lead Symbol RthJL RthJA Value 25 150 125 100 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Test Conditions IF=1A VR=VRRM VR=VRRM, Tj=100C Type Symbol VF IR Min Typ Max 750 100 1 Unit mV mA mA Document Number 86014 Rev. 3, 08-Sep-00 www.vishay.com 1 (4) BYS11-90 Vishay Semiconductors Characteristics (Tj = 25_C unless otherwise specified) PR - Maximum Reverse Power Dissipation ( W ) 2.0 I FAV- Average Forward Current ( A ) RthJA=25K/W 1.6 2.0 1.6 RthJA=25K/W 1.2 100K/W 0.8 0.4 0 200 95 9718 VR = 0 V, Half Sinewave 1.2 RthJA=100K/W 0.8 0.4 0 0 40 80 120 VR = VR RM 160 125K/W 150K/W 0 40 80 120 160 200 95 9715 Tj - Junction Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 1000 IR - Reverse Current ( mA ) VR = VR RM 100 - Forward Current ( A) Figure 4. Max. Average Forward Current vs. Ambient Temperature 10.000 Tj = 150C 1.000 10 0.100 Tj = 25C 0.010 I 0.1 0 95 9716 F 1 0.001 40 80 120 160 200 16469 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VF - Forward Voltage ( V ) Tj - Junction Temperature ( C ) Figure 2. Max. Reverse Current vs. Junction Temperature Figure 5. Forward Current vs. Forward Voltage 180 I FAV- Average Forward Current ( A ) 2.0 CD - Diode Capacitance ( pF ) VR = VR RM, Half Sinewave, RthJA=25K/W 1.6 1.2 0.8 0.4 0 0 40 80 120 160 200 16470 160 140 120 100 80 60 40 20 0 0.1 1.0 10.0 f=1MHz 100.0 95 9717 Tamb - Ambient Temperature ( C ) VR - Reverse Voltage ( V ) Figure 3. Max. Average Forward Current vs. Ambient Temperature Figure 6. Diode Capacitance vs. Reverse Voltage www.vishay.com 2 (4) Document Number 86014 Rev. 3, 08-Sep-00 BYS11-90 Vishay Semiconductors Dimensions in mm 14275 Document Number 86014 Rev. 3, 08-Sep-00 www.vishay.com 3 (4) BYS11-90 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.com 4 (4) Document Number 86014 Rev. 3, 08-Sep-00 |
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