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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D189
BY505 High-voltage soft-recovery rectifier
Product specification Supersedes data of May 1996 1996 Sep 26
Philips Semiconductors
Product specification
High-voltage soft-recovery rectifier
FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Soft-recovery switching characteristics * Compact construction. APPLICATIONS * High-voltage applications for: - High frequencies - Switching applications.
The cathode lead is marked by a black band. k handbook, halfpage
BY505
expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas.
DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of
a
MAM162
Fig.1 Simplified outline (SOD61A) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRSM VRRM VRW IF(AV) PARAMETER non-repetitive peak reverse voltage repetitive peak reverse voltage working reverse voltage average forward current averaged over any 20 ms period; Ttp = 25 C; lead length = 10 mm; see Fig.2; see also Fig.4 averaged over any 20 ms period; Tamb = 60 C; PCB mounting (see Fig.6); see Fig.3; see also Fig.4 IFRM IFSM repetitive peak forward current non-repetitive peak forward current t 10 ms; half sinewave; Tj = Tj max prior to surge; VR = VRWmax CONDITIONS MIN. - - - - MAX. 2200 2200 2000 85 V V V mA UNIT
-
50
mA
- -
800 5
mA A
Tstg Tj
storage temperature junction temperature
-65 -65
+120 +120
C C
1996 Sep 26
2
Philips Semiconductors
Product specification
High-voltage soft-recovery rectifier
ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF IR Qr PARAMETER forward voltage reverse current recovery charge CONDITIONS IF = 100 mA; Tj = Tj max; see Fig.5 VR = VRWmax; Tj = Tj max when switched from IF = 100 mA to VR 100 V and dIF/dt = -200 mA/s; see Fig.7 when switched from IF = 100 mA to VR 100 V and dIF/dt = -200 mA/s; see Fig.7 when switched from IF = 100 mA to VR 100 V and dIF/dt = -200 mA/s; see Fig.7 VR = 0 V; f = 1 MHz MIN. - - - TYP. - - -
BY505
MAX. 8.5 3 1 V
UNIT A nC
tf
fall time
100
-
-
ns
trr
reverse recovery time
-
200
-
ns
Cd
diode capacitance
-
2
-
pF
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig.6. For more information please refer to the "General Part of associated Handbook". PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 100 155 UNIT K/W K/W
1996 Sep 26
3
Philips Semiconductors
Product specification
High-voltage soft-recovery rectifier
GRAPHICAL DATA
100
MBH399
BY505
handbook, halfpage
handbook, halfpage
100
MBH400
IF(AV) (mA) 80
IF(AV) (mA) 80
60
60
40
40
20
20
0 0 40 80 Ttp (C) 120 Switched mode application. a = 1.42; = 0.5; VR = VRWmax; lead length = 10 mm.
0 0 40 80 Tamb (C) 120 Switched mode application. a = 1.42; = 0.5; VR = VRWmax; device mounted as shown in Fig.6.
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
handbook, halfpage
1000
MBH401
handbook, halfpage
200
MBH402
a = 3 2.5 2 1.57 1.42 P (mW) IF (mA)
500
100
0 0 80 IF(AV) (mA) 100
0 0 10 VF (V) 20
a = IF(RMS)/IF(AV); = 0.5; VR = VRWmax.
Dotted line: Tj = 120 C. Solid line: Tj = 25 C.
Fig.4
Maximum steady state power dissipation (forward plus leakage losses) as a function of average forward current.
Fig.5
Forward current as a function of maximum forward voltage.
1996 Sep 26
4
Philips Semiconductors
Product specification
High-voltage soft-recovery rectifier
BY505
handbook, halfpage
50 25
handbook, halfpage I
F
7 50
dI F dt t rr 10% t Qr
2 3
MGA200
90% IR tf
MGD569
Dimensions in mm.
Fig.6 Device mounted on a printed-circuit board.
Fig.7 Reverse recovery definitions.
1996 Sep 26
5
Philips Semiconductors
Product specification
High-voltage soft-recovery rectifier
PACKAGE OUTLINE
BY505
k
handbook, full pagewidth
a
0.6
3 max
2.5 max
32.5 min
4.9 max
32.5 min
MGD603
Dimensions in mm. The marking band indicates the cathode.
Fig.8 SOD61A.
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1996 Sep 26
6

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