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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508D
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4.5 1.6 0.4 MAX. 1500 700 8 15 125 1.0 5.0 2.0 0.6 UNIT V V A A W V V A V s
Tmb 25 C IC = 4.5 A; IB = 1.29 A IC = 4.5 A; IB = 1.1 A IF = 4.5 A ICM = 4.5 A; IB(end) = 1.1 A
PINNING - SOT93
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c b
Rbe
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15 4 6 100 5 125 150 150 UNIT V V A A A A mA A W C C
average over any 20 ms period Tmb 25 C
1 Turn-off current.
December 1995
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508D
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO Rbe VCEOsust VCEsat VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current 2 CONDITIONS MIN. 140 7.5 700 7 4 TYP. 13.5 33 13 5.5 1.6 MAX. 1.0 2.0 390 5.0 1.0 1.3 23 7.5 2.0 UNIT mA mA mA V V V V V V VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C Emitter cut-off current VEB = 7.5 V; IC = 0 A Emitter-base breakdown voltage IB = 600 mA Base-emitter resistance VEB = 7.5 V Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 4.5 A; IB = 1.1 A IC = 4.5 A; IB = 1.29 A Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A DC current gain IC = 1 A; VCE = 5 V IC = 4.5 A; VCE = 1 V Diode forward voltage IF = 4.5 A
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time Switching times (38 kHz line deflection circuit) Turn-off storage time Turn-off fall time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICM = 4.5 A; IB(end) = 1.1 A; LB = 6 H; -VBB = 4 V; (-dIB/dt = 0.6 A/s) ICM = 4.0 A; IB(end) = 0.9 A; LB = 6 H; -VBB = 4 V; (-dIB/dt = 0.6 A/s) TYP. 80 MAX. UNIT pF s s s s
ts tf
5.0 0.4
6.0 0.6
ts tf
4.7 0.25
5.7 0.35
2 Measured with half sine-wave voltage (curve tracer).
December 1995
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508D
TRANSISTOR IC DIODE
ICM
100
h FE
BU2508D
t
Tj = 25 C Tj = 125 C
5V
IB
IBend
10
t 20us 26us 64us VCE
1V
1 0.01
t
0.1 IC / A
1
10
Fig.1. Switching times waveforms.
Fig.4. Typical DC current gain. hFE = f (IC) parameter VCE
ICM 90 % IC
1.2 1.1 1 0.9
VBESAT / V
Tj = 25 C Tj = 125 C
BU2508D
10 % tf ts IB IBend
0.8
t
IC/IB= 3 4 5
0.7 0.6
t
0.5 0.4 0.1 1 IC / A 10
- IBM
Fig.2. Switching times definitions.
Fig.5. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB
VCESAT / V IC/IB= 5 4 3 BU2508D
+ 150 v nominal adjust for ICM
1 0.9 0.8
1mH
0.7 0.6 0.5
Tj = 25 C Tj = 125 C
D.U.T. IBend LB 12nF
Rbe
0.4 0.3 0.2 0.1 0 0.1
-VBB
1 IC / A
10
Fig.3. Switching times test circuit.
Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
December 1995
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508D
1.2 1.1 1 0.9 0.8 0.7 0.6
VBESAT / V
Tj = 25 C Tj = 125 C
BU2508D
IC= 6A 4.5A 3A 2A
12 11 10 9 8 7 6 5 4 3 2 1 0
ts, tf / us
BU2508D ts
IC = 4.5A 3.5A tf 0.1 1 IB / A 10
0
1
2 IB / A
3
4
Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
VCESAT / V BU2508D
Tj = 25 C Tj = 125 C
Fig.10. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 16 kHz
Zth / (K/W)
10
10
6A
1
4.5A 1 3A IC=2A 0.1
0.5 0.2 0.1 0.05 0.02 D=0
0.1
P D
tp
D=
tp T t
T
0.1
1 IB / A
10
0.01 1E-06
1E-04 t/s
1E-02
1E+00
Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC
Eoff / uJ IC = 4.5A 3.5A 100 BU2508D
Fig.11. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
PD% Normalised Power Derating
1000
120 110 100 90 80 70 60 50 40 30 20 10
10
0.1
1 IB / A
10
0 0 20 40 60 80 100 Tmb / C 120 140
Fig.9. Typical turn-off losses. Tj = 85C Eoff = f (IB); parameter IC; f = 16 kHz
Fig.12. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb)
December 1995
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508D
100
IC / A
= 0.01
ICM max 10 IC max
(1) II
tp = 5 us 10 20
I
50 100 200 500
1
(2)
1 ms 2 5 10 20 DC
0.1
0.01 1 10 100 VCE / V 1000
Fig.13. Forward bias safe operating area. Tmb = 25C (1) Ptot max line. (2) Second-breakdown limits (independent of temperature). I Region of DC operation. II Extension for repetitive pulse operation.
December 1995
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508D
MECHANICAL DATA
Dimensions in mm Net Mass: 5 g
15.2 max 14 13.6 2 max
4.25 4.15
4.6 max 2 4.4
21 max 12.7 max
2.2 max dimensions within this zone are uncontrolled 1 5.5 11
Fig.14. SOT93; pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8".
0.5 min
13.6 min
2
3 1.15 0.95 0.5 M 1.6 0.4
December 1995
6
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508D
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
December 1995
7
Rev 1.200

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