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CYStech Electronics Corp.
Low VCESAT PNP Epitaxial Planar Transistor
Spec. No. : C313N3-H Issued Date : 2003.09.26
Revised Date : Page No. : 1/4
BTP8550N3
Features
* Low VCE(SAT), -0.18V(typically) at IC=-500mA/IB=-50mA. * Complementary to BTN8050N3.
Symbol
BTP8550N3
Outline
SOT-23
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RJA Tj Tstg Limits -30 -20 -5 -1 225 556 150 -55~+150 Unit V V V A mW C/W C C
BTP8550N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(on) *hFE 1 *hFE 2 fT Cob Min. -30 -20 -5 100 80 Typ. -0.18 150 15 Max. -500 -500 -0.3 -0.4 -1 500 Unit V V V nA nA V V V MHz pF
Spec. No. : C313N3-H Issued Date : 2003.09.26
Revised Date : Page No. : 2/4
Test Conditions IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 IC=-400mA, IB=-20mA IC=-500mA, IB=-50mA VCE=-1V, IC=-150mA VCE=-1V, IC=-150mA VCE=-3V, IC=-800mA VCE=-5V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
Classification Of hFE 1
Rank Range C 100~200 D 150~300 E 250~500
BTP8550N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=2V
Spec. No. : C313N3-H Issued Date : 2003.09.26
Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
1000 Saturation Voltage---(mV)
VCESAT@IC=20IB
Current Gain---HFE
100
100 0.1 1 10 100 1000 Collector Current ---IC(mA)
10 1 10 100 1000 Collector Current ---IC(mA)
Saturation Voltage vs Collector Current
1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1
Cutoff Frequency vs Collector Current
VBE(SAT)@IC=20IB
FT@VCE=2V
100 1 10 100 1000 Collector Current ---IC(mA)
0.1
1
10
Collector Current---IC(mA)
100
Power Derating Curve
250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature ---Ta( )
BTP8550N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C313N3-H Issued Date : 2003.09.26
Revised Date : Page No. : 4/4
A L 3 B 1 2 S
Marking:
B9 TE
V
G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector D H K J
C
*: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTP8550N3
CYStek Product Specification

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