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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 1/4
BTD882D3
Features
* Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA * Excellent current gain characteristics * Complementary to BTB772D3 * Pb-free package
Symbol
BTD882D3
Outline
TO-126ML
BBase CCollector EEmitter EC B
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25) Power Dissipation (TC=25) Junction Temperature Storage Temperature
Note : Pulse test, pulse width380s, duty cycle2%.
Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg
Limits 50 50 5 3 7 (Note) 1 10 150 -55~+150
Unit V V V A W C C
BTD882D3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 50 50 5 150 180 100 Typ. 0.25 90 45 Max. 1 1 0.5 2 820 Unit V V V A A V V MHz pF
Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 2/4
Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 IC=2A, IB=200mA IC=2A, IB=200mA VCE=2V, IC=20mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=5V, IC=100mA, f =100MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification Of hFE 2
Rank Range R 180~390 S 270~560 T 390~820
Characteristic Curves
Grounded Emitter Output Characteristics
140 Collector Current---IC(mA)
Grounded Emitter Output Characteristics
700
2.5mA 2mA 1.5mA 1mA 500uA IB=0uA
100 80 60 40 20 0 0 1 2 3 4
400uA 300uA 200uA 100uA IB=0uA
Collector Current---IC(mA)
120
500uA
600 500 400 300 200 100 0
5
6
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector To Emitter Voltage---VCE(V)
BTD882D3
CYStek Product Specification
CYStech Electronics Corp.
Grounded Emitter Output Characteristics
2500
Collector Current---IC(mA)
Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 3/4
Grounded Emitter Output Characteristics
3500
10mA 8mA 25mA 20mA 15mA 10mA
2000 1500 1000 500 0 0 1 2 3 4 5 Collector To Emitter Voltage---VCE(V)
Collector Current---IC(mA)
3000 2500 2000 1500 1000 500 0
6mA 4mA 2mA IB=0mA
5mA IB=0mA
6
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Current gain vs Collector current
1000
Saturation voltage---(mV)
Saturation voltage vs Collector current
1000
VCE(sat)
Current gain---HFE
VCE=5V
100
IC=40IB
100
VCE=2V VCE=1V
10
IC=10IB IC=20IB
10 1 10 100 1000 10000 Collector current---IC(mA)
1 1 10 100 1000 10000 Collector current---IC(mA)
Saturation votlage vs Collector current
10000 Saturation voltage---(mV)
VBE(sat)@IC=10IB
Power Derating Curve
1.2 Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0
1000
100 1 10 100 1000 10000 Collector current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA()
BTD882D3
CYStek Product Specification
CYStech Electronics Corp.
TO-126ML Dimension
Marking:
Spec. No. : C848D3-H Issued Date : 2005.05.04 Revised Date : Page No. : 4/4
D882
Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-126ML Plastic Package CYStek Package Code: D3
*: Typical
DIM A B C D 1 2 F G
Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1220 0.1299 0.1181 0.1260 0.0737 0.0837 0.0294 0.0494
Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 3.10 3.30 3.00 3.20 1.87 2.12 0.74 1.25
DIM H I J K L M N O
Inches Min. Max. 0.0462 0.0562 *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842
Millimeters Min. Max. 1.17 1.42 *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD882D3
CYStek Product Specification

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