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| BSP 298 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Avalanche rated * VGS(th)= 2.1 ... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 400 V ID 0.5 A RDS(on) 3 Package Marking BSP 298 Type BSP 298 SOT-223 BSP 298 Ordering Code Q67000-S200 Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 26 C ID A 0.5 DC drain current, pulsed TA = 25 C IDpuls 2 E AS Avalanche energy, single pulse ID = 1.35 A, VDD = 50 V, RGS = 25 L = 125 mH, Tj = 25 C mJ 130 V GS P tot Gate source voltage Power dissipation TA = 25 C 20 1.8 V W Semiconductor Group 1 Sep-12-1996 BSP 298 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA RthJS -55 ... + 150 -55 ... + 150 C 70 10 E 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 0 C V (BR)DSS V 400 - Gate threshold voltage V GS=V DS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 A Zero gate voltage drain current V DS = 400 V, V GS = 0 V, Tj = 25 C V DS = 400 V, V GS = 0 V, Tj = 125 C IGSS 0.1 10 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-state resistance V GS = 10 V, ID = 0.5 A 2.2 3 Semiconductor Group 2 Sep-12-1996 BSP 298 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance V DS 2 * ID * RDS(on)max, ID = 0.5 A gfs S 0.5 1.2 pF 300 400 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 50 75 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 20 30 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 tr 10 15 Rise time V DD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 td(off) 25 40 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 tf 30 40 Fall time V DD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 - 20 30 Semiconductor Group 3 Sep-12-1996 BSP 298 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TA = 25 C IS A 0.5 Inverse diode direct current,pulsed TA = 25 C ISM V SD - 2 V Inverse diode forward voltage V GS = 0 V, IF = 1 A, Tj = 25 C trr 0.95 1.2 ns Reverse recovery time V R = 100 V, IF=lS, diF/dt = 100 A/s Qrr 300 C Reverse recovery charge V R = 100 V, IF=lS, diF/dt = 100 A/s - 2.5 - Semiconductor Group 4 Sep-12-1996 BSP 298 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 0.55 A ID 0.45 0.40 0.35 2.0 W Ptot 1.6 1.4 1.2 0.30 1.0 0.25 0.8 0.20 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 0.15 0.10 0.05 0.00 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25C Transient thermal impedance Zth JA = (tp ) parameter: D = tp / T 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 0.10 10 -3 single pulse 10 -4 0.05 0.02 0.01 10 -2 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 298 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C l Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 10 1.2 A 1.0 ID 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 Ptot = 2W j f i h e d g c k b VGS [V] a b c d e f g h 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 RDS (on) 8 7 6 5 4 3 2 1 0 VGS [V] = a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 a a i j k l b l j h ic e d fg k j 9.0 k l 10.0 20.0 1 2 3 4 5 6 7 8 V 10 0.00 0.10 0.20 0.30 0.40 A 0.60 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, 2.6 A 2.2 I D 2.6 S 2.2 g fs 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 V VGS 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 10 0.0 0.4 0.8 1.2 1.6 A ID 2.2 Semiconductor Group 6 Sep-12-1996 BSP 298 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 0.5 A, VGS = 10 V 7.5 Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 VGS(th) 3.6 3.2 2.8 typ 98% 6.5 RDS (on) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -20 20 60 100 C 160 98% 2.4 2.0 2% typ 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 1 nF C A IF 10 0 10 0 Ciss 10 -1 10 -1 Tj = 25 C typ Coss Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0.0 Crss 10 -2 0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 Sep-12-1996 BSP 298 Avalanche energy EAS = (Tj) parameter: ID = 1.35 A, VDD = 50 V RGS = 25 , L = 125 mH 140 mJ 120 EAS 110 100 90 80 70 60 50 40 Drain-source breakdown voltage V(BR)DSS = (Tj) 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 30 20 10 0 20 40 60 80 100 120 C 160 380 370 360 -60 -20 20 60 100 C 160 Tj Tj Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C Semiconductor Group 8 Sep-12-1996 BSP 298 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996 |
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