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Preliminary Data
SIPMOS(R) Small-Signal-Transistor Features * Dual N Channel
* Enhancement mode
BSO 615N
Product Summary
Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS RDS(on) ID
60 0.15 2.6
V A
* Avalanche rated * Logic Level * dv/dt rated
Type BSO 615N
Parameter Continuous drain current, one channel active Pulsed drain current, one channel active
Package SO 8
Symbol
Ordering Code Q67041-S2843
Value 2.6 10.4 60 2.6 0.18 6 mJ A mJ kV/s Unit A
Maximum Ratings, at T j = 25 C, unless otherwise specified
ID IDpulse EAS IAR EAR
dv/dt
T A = 25 C
Avalanche energy, single pulse
I D = 2.6 A, V DD = 25 V, R GS = 25
Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
I S = 2.6 A, V DS = 40 V, di/dt = 200 A/s, T jmax = 150 C
Gate source voltage Power dissipation, one channel active
VGS Ptot Tj Tstg
20 2 -55 ... +150 -55 ... +150 55/150/56
V W C
T A = 25 C
Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1
Data Sheet
1
05.99
BSO 615N
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance @ 10 sec., min. footprint Thermal resistance @ 10 sec., 6 cm2 cooling area 1) Symbol min. Values typ. max. 35 100 62.5 K/W Unit
RthJS Rth(JA) Rth(JA)
-
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values min.
Static Characteristics Drain- source breakdown voltage
Unit max.
2 A V
typ.
1.6
V(BR)DSS VGS(th) IDSS
60 1.2
VGS = 0 V, I D = 0.25 mA
Gate threshold voltage, VGS = VDS
I D = 20 A
Zero gate voltage drain current
VDS = 60 V, V GS = 0 V, T j = 25 C VDS = 60 V, V GS = 0 V, T j = 150 C
Gate-source leakage current
-
0.1 10 10
1 100 100 nA
IGSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 4.5 V, I D = 2.6 A
-
0.12
0.15
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air.
Data Sheet
2
05.99
BSO 615N
Electrical Characteristics Parameter Characteristics Transconductance Symbol min. Values typ. 5.5 300 90 50 12 max. 380 120 65 20 ns S pF Unit
gfs Ciss Coss Crss td(on)
2.4 -
VDS2*I D*RDS(on)max , ID = 2.6 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, V GS = 4.5 V, ID = 2.6 A, RG = 16
Rise time
tr
-
15
25
VDD = 30 V, V GS = 4.5 V, ID = 2.6 A, RG = 16
Turn-off delay time
td(off)
-
20
30
VDD = 30 V, V GS = 4.5 V, ID = 2.6 A, RG = 16
Fall time
tf
-
15
25
VDD = 30 V, V GS = 4.5 V, ID = 2.6 A, RG = 16
Data Sheet
3
05.99
BSO 615N
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values at Tj = 25 C, unless otherwise specified Dynamic Characteristics Gate charge at threshold min. typ. 0.4 7 14 3.6 max. 0.6 10 20 -
Unit
QG(th) Qg(5) Qg V(plateau)
-
nC
VDD = 40 V, ID = 0.1 A, VGS = 1 V
Gate charge at Vgs=5V VDD = 40 V, ID = 2.6 A, VGS = 0 to 5 V Gate charge total
nC V
VDD = 40 V, ID = 2.6 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 2.6 A
Reverse Diode Inverse diode continuous forward current
IS I SM VSD t rr Q rr
-
0.95 50 0.1
2.6 10.4 1.2 75 0.15
A
TA = 25 C
Inverse diode direct current,pulsed
TA = 25 C
Inverse diode forward voltage V ns C
VGS = 0 V, I F = 5.2 A
Reverse recovery time
VR = 30 V, IF=IS , diF/dt = 100 A/s
Reverse recovery charge
VR = 30 V, IF=l S , diF/dt = 100 A/s
Data Sheet
4
05.99
BSO 615N
Power Dissipation
Drain current
Ptot = f (TA), VGS = 4,5 V
BSO 615N
ID = f (TA ), VGS = 4,5 V
BSO 615N
2.4
W
2.8
A
2.4
2.0
2.2
1.8
2.0 1.8
Ptot
1.6
ID
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120
C
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
160
0.0 0
20
40
60
80
100
120
C
160
TA
TA
Safe operating area
Transient thermal impedance
ID = f ( V DS )
parameter : D = 0 , TA = 25 C, VGS = 4,5 V
10
A
2 BSO 615N
ZthJA = f(tp )
parameter : D = tp /T
10 2
BSO 615N
K/W
/ID
10 1
=
VD
S
tp = 5.7s
10 s
R
ID
100 s
10 0
1 ms
Z thJA
( DS
) on
10 1
D = 0.50
10 ms
0.20 10
0
0.10 single pulse 0.05 0.02 0.01
10 -1
DC 10 -2 -1 10 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10
10
0
10
1
V
10
2
s
10
4
VDS
tp
Data Sheet
5
05.99
BSO 615N
Typ. output characteristics
Drain-source on-resistance
I D = f (VDS)
parameter: tp = 80 s
BSO 615N
RDS(on) = f (Tj)
parameter : I D = 2.6 A, VGS = 4.5 V
BSO 615N
6.5
A
Ptot = 2W
g j ihf e l kd
0.36
VGS [V] a 2.0
b 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0
5.5 5.0 4.5
0.28
c
c d
RDS(on)
0.24 0.20
ID
4.0 3.5 3.0 2.5 2.0 1.5 1.0
e f g h i j k
98%
0.16 0.12 0.08 0.04
typ
bl
0.5
a
0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
0.00 -60
-20
20
60
100
C
180
VDS
Tj
Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz
10 3
pF
Ciss C
10 2
Coss Crss
10 1 0
5
10
15
20
25
30
V
40
VDS
Data Sheet
6
05.99
BSO 615N
Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 s VDS 2 x I D x RDS(on) max
15 A
Gate threshold voltage
VGS(th) = f (Tj)
parameter : VGS = VDS , ID = 20 A
3.2
V
12
10
VGS(th)
11
2.4
ID
9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8
V
2.0
1.6
max
1.2
0.8
typ
0.4
min
10
0.0 -60
-20
20
60
100
V
160
VGS
Tj
Forward characteristics of reverse diode
I F = f (VSD)
parameter: Tj , tp = 80 s
10 2
BSO 615N
A
10 1
IF
10 0
Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)
10 -1 0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Data Sheet
7
05.99
BSO 615N
Avalanche Energy EAS = f (Tj) parameter: ID = 2.6 A, VDD = 25 V RGS = 25
65
Typ. gate charge
VGS = f (Q Gate)
parameter: ID puls = 2.6 A
BSO 615N
16
mJ
V
55 50 45 12
VGS
EAS
40 35
10
8 30 25 20 15 10 5 0 20 40 60 80 100 120
C
0,2 VDS max 6
0,8 VDS max
4
2
160
0 0
4
8
12
16
nC
24
Drain-source breakdown voltage
Tj
Q Gate
V(BR)DSS = f (Tj)
BSO 615N
72
V
68 66 64 62 60 58 56 54 -60
V(BR)DSS
-20
20
60
100
C
180
Tj
Data Sheet
8
05.99

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