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| BSO080P03S OptiMOS(R)-P Small-Signal-Transistor Features * P-Channel * Enhancement mode * Logic level * 150C operating temperature * Avalanche rated * dv /dt rated * Ideal for fast switching buck converter Product Summary V DS R DS(on),max ID -30 8 -14.9 V m A P-DSO-8 Type BSO080P03S Package P-DSO-8 Ordering Code Q67042-S4232 Marking 080P3S Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Value 10 secs Continuous drain current ID T A=25 C1) T A=70 C1) Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 C2) I D=-14.9 A, R GS=25 I D=-14.9 A, V DS=20 V, di /dt =-200 A/s, T j,max=150 C -14.9 -11.9 -60 248 mJ steady state -12.6 -10 A Unit Reverse diode dv /dt dv /dt -6 kV/s Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS P tot T j, T stg T A=25 C1) 2.5 25 1.79 -55 ... 150 55/150/56 V W C Rev. 1.0 page 1 2004-01-21 BSO080P03S Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, t p10 s minimal footprint, steady state 6 cm2 cooling area1), t p10 s 6 cm2 cooling area1), steady state Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250A V GS(th) V DS=V GS, I D=-250 A V DS=-30 V, V GS=0 V, T j=25 C V DS=-30 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-25 V, V DS=0 V V GS=-10 V, I D=-14.9 A |V DS|>2|I D|R DS(on)max, I D=-14.9 A -30 -1 -1.5 -2.2 V 35 K/W Values typ. max. Unit R thJA - - 110 - - 150 - - 50 - - 70 Zero gate voltage drain current I DSS - -0.1 -1 A - -10 -10 6.7 -100 -100 8.0 nA Transconductance g fs 22 43 - S Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 1) Rev. 1.0 page 2 2004-01-21 BSO080P03S Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T A=25 C V GS=0 V, I F=-14.9 A, T j=25 C V R=15 V, I F=-14.9A, di F/dt =100 A/s -0.82 -2.1 -60 -1.2 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=-15 V, V GS=0 V V DD=-24 V, I D=-14.9 A, V GS=0 to -10 V -11 -7.1 -35 -40 -102 -2.5 -36 -59 -136 -48 V -15 -9.5 nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-15 V, V GS=-10 V, I D=-1 A, R G=6 V GS=0 V, V DS=-25 V, f =1 MHz 4430 1180 970 15 22 130 110 5890 1570 1500 23 33 195 165 ns pF Values typ. max. Unit Reverse recovery time t rr - 32 40 ns Reverse recovery charge Q rr - -20 -25 nC 2) 3) See figure 3 See figure 16 for gate charge parameter definition Rev. 1.0 page 3 2004-01-21 BSO080P03S 1 Power dissipation P tot=f(T A); t p10 s 2 Drain current I D=f(T A); |V GS|10 V; t p10 s 3 16 2.5 12 2 P tot [W] 1.5 -I D [A] 0 40 80 120 160 8 1 4 0.5 0 0 0 40 80 120 160 T A [C] T A [C] 3 Safe operation area I D=f(V DS); T A=25 C ; D =0 parameter: t p 102 100 4 Max. transient thermal impedance Z thJS=f(t p) parameter: D =t p/T 102 10 s 1 s 100 s 0.5 100 1) 101 10 limited by on-state resistance 1 ms 101 10 0.2 0.1 10 ms Z thJS [K/W] 0.05 -I D [A] 100 1 100 1 0.02 0.01 10-1 0.1 10-1 DC 0.1 single pulse 10-2 0.01 0.1 1 10 100 10-2 2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 10 -1 10 0 -V DS [V] 10 1 10 10 -5 10 -4 10 -3 t p [s] 10 -2 10 -1 10 0 101 Rev. 1.0 page 4 2004-01-21 BSO080P03S 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 60 -10 V -4.5 V -3.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 25 -2.5 V -2.7 V -3 V 50 -3.2 V 20 -3.2 V 40 R DS(on) [m] -3 V 15 -3.5 V -I D [A] 30 10 -4.5 V 20 -2.7 V -10 V -2.5 V 10 5 -2.3 V 0 0 1 2 3 0 0 10 20 30 40 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 60 8 Typ. forward transconductance g fs=f(I D); T j=25 C 60 50 40 40 -I D [A] 30 20 g fs [S] 20 150 C 25 C 10 0 0 1 2 3 4 0 0 10 20 30 -V GS [V] -I D [A] Rev. 1.0 page 5 2004-01-21 BSO080P03S 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-14.9 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-250 A 12 2.5 10 98 % 2 max. 8 R DS(on) [m] typ. 6 -V GS(th) [V] 1.5 typ. 1 min. 4 2 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 10000 100 25 C, typ Ciss 150 C, typ 150 C, 98% 10 Coss 25 C, 98% C [pF] 103 1000 Crss I F [A] 1 0.1 20 30 102 100 0 10 0 0.5 1 1.5 -V DS [V] -V SD [V] Rev. 1.0 page 6 2004-01-21 BSO080P03S 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=-7.5 A pulsed parameter: V DD 12 -15 V 10 -6 V -24 V 25 C 8 10 100 C 125 C -V GS [V] 1000 -I AV [A] 6 4 2 1 1 10 100 0 0 20 40 60 80 100 120 t AV [s] -Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 A 16 Gate charge waveforms 36 V GS 34 32 30 28 26 24 22 20 -60 -20 20 60 100 140 180 Qg -V BR(DSS) [V] V g s(th) Q g (th) Q gs Q sw Q gd Q gate T j [C] Rev. 1.0 page 7 2004-01-21 BSO080P03S Package Outline P-DSO-8: Outline Footprint Packaging Tape Tube Dimensions in mm Rev. 1.0 page 8 2004-01-21 BSO080P03S Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts started herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2004-01-21 |
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