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BFP460
NPN Silicon RF Transistor* * For low voltage / low current applications * Ideal for VCO modules and low noise amplifiers * Low noise figure: 1.1 dB at 1.8 GHz * Excellent ESD performance * High fT of 22 GHz
* Short-term description
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP460
Maximum Ratings Parameter
Marking Pin Configuration ABs 1 = E 2 = C 3 = E 4=B Symbol VCEO
Package SOT343
Value 4.5 4.2 Unit V
Collector-emitter voltage TA > 0 C TA 0 C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1)2) TS 100C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 3)
1P due to Maximum Ratings tot
VCES VCBO VEBO IC IB Ptot Tj TA T stg Symbol RthJS
15 15 1.5 50 5 200 150 -65 ... 150 -65 ... 150 Value 250 Unit K/W mW C mA
2T is measured on the collector lead at the soldering point to the pcb S 3For calculation of R thJA please refer to Application Note Thermal Resistance
1
Jun-14-2004
BFP460
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, I E = 0 Emitter-base cutoff current VEB = 0,5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3 V, pulse measured hFE 90 120 160 IEBO 1 A ICBO 100 nA V(BR)CEO 4.5 5.8 V Symbol min. Values typ. max. Unit
2
Jun-14-2004
BFP460
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 30 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure IC = 5 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz IC = 5 mA, VCE = 3 V, ZS = ZSopt , f = 3 GHz Power gain, maximum stable1) IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz Power gain, maximum available1) IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 3 GHz Transducer gain IC = 20 mA, VCE = 3 V, ZS = ZL = 50, f = 1,8 GHz IC = 20 mA, VCE = 3 V, ZS = ZL = 50 , f = 3 GHz Third order intercept point at output 2) VCE = 3 V, I C = 20 mA, f = 1.8 GHz 1dB Compression point at output IC = 20 mA, VCE = 3 V, f = 1.8 GHz
1G 1/2 ma = |S21 / S12| (k-(k-1) ), G ms = S 21 / S 12 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
Unit
16 -
22 0.32 0.28 0.55
0.45 -
GHz pF
Ccb Cce Ceb F
dB 1.1 1.35 17.5 dB
G ms
-
G ma
-
12.5
-
dB
|S21e|2 IP 3 P-1dB 15 10.5 27.5 11.5 -
dB
dBm
3
Jun-14-2004
BFP460
Collector-base capacitance Ccb= (VCB) f = 1MHz
0.7
pF
Third order Intercept Point IP3=(IC) (Output, ZS=ZL=50) VCE = parameter, f = 1800MHz 33 dBm 29 27
4V 3V
0.5
25
CCB
0.4
IP3
23 21 19
2V
0.3
17 15
0.2
13 11
1V
0.1
9 7
0 0
2
4
6
8
10
V
14
5 0
10
20
30
40
mA
55
VCB
IC
Transition frequency fT = (IC) f = 1 GHz VCE = parameter in V
24
GHz 2V 3-4V
Power gain Gma, Gms , |S 21|2 = (f) VCE = 3 V, I C = 20 mA
50
dB
20 18
1V
40 35 30 25 20 15 10 5
mA |S21| Gma Gms
fT
16 14 12 10 8 6 4 0
G
10
20
30
40
60
0 0
1
2
3
4
GHz
6
IC
f
4
Jun-14-2004
BFP460
Power gain Gma, Gms = (I C) VCE = 3V f = parameter in GHz
24
dB 0.9
Power gain Gma, Gms = (VCE) IC = 20 mA f = parameter in GHz
24
dB 0.9
20 18
1.8
20 18 16
2.4 1.8
16 14 12 10 8 6 4 0
mA 2.4 3 4 5 6
G
G
14
3
12 10 8 6 4 0.5
V 4 5 6
10
20
30
40
60
1
1.5
2
2.5
3
3.5
4.5
IC
VCE
5
Jun-14-2004

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