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| DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB146 UHF variable capacitance diode Product specification 1996 Sep 20 Philips Semiconductors Product specification UHF variable capacitance diode FEATURES * Ultra high ratio * Excellent matching to 1.6% DMA (Direct Matching Assembly) * Very small plastic SMD package * C28: 1.9 pF; ratio 20. MAM130 BB146 handbook, 4 columns k a APPLICATIONS * Electronic tuning in television tuners with extended UHF range * Voltage controlled oscillators (VCO). DESCRIPTION The BB146 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. The excellent matching performance is achieved by gliding matching and a direct matching assembly procedure. ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance ratio CONDITIONS VR = 30 V; see Fig.3 VR = 30 V; Tj = 85 C; see Fig.3 f = 470 MHz; note 1 VR = 0.5 V; f = 1 MHz; see Figs 2 and 4 VR = 28 V; f = 1 MHz; see Figs 2 and 4 C d ( 0.5V ) --------------------C d ( 28V ) C d --------Cd Note 1. VR is the value at which Cd = 9 pF. f = 1 MHz - - - 35 1.7 17.5 MIN. MAX. 10 200 1.4 43 2.1 23 UNIT nA nA pF pF Marking code: P6. Cathode side indicated by a bar. Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage temperature operating junction temperature - - -55 -55 MIN. MAX. 30 20 +150 +125 UNIT V mA C C capacitance matching VR = 0.5 to 28 V; in a sequence of 8 diodes (gliding) - 1.6 % 1996 Sep 20 2 Philips Semiconductors Product specification UHF variable capacitance diode GRAPHICAL DATA BB146 handbook, full pagewidth 50 MBH584 Cd (pF) 40 30 20 10 0 10-1 f = 1 MHz; Tj = 25 C. 1 10 VR (V) 102 Fig.2 Diode capacitance as a function of reverse voltage; typical values. 10 3 handbook, halfpage MLC816 10 3 handbook, halfpage MLC815 IR (nA) TC d (K-1) 102 10 4 10 0 50 T j ( C) o 100 10 5 10 1 1 10 VR (V) 102 Tj = 0 to 85 C. Fig.4 Fig.3 Reverse current as a function of junction temperature; maximum values. Temperature coefficient of diode capacitance as a function of reverse voltage; typical values. 1996 Sep 20 3 Philips Semiconductors Product specification UHF variable capacitance diode PACKAGE OUTLINE BB146 handbook, full pagewidth 1.00 max 0.25 0.10 1.35 1.15 0.40 0.25 Dimensions in mm. The marking bar indicates the cathode. , , 0.55 0.40 0.05 max MBC672 - 1 A 1.8 1.6 2.7 2.3 0.2 M A Fig.5 SOD323. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 20 4 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. |
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