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BAS32L High-speed switching diode Rev. 04 -- 22 March 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C SMD package. 1.2 Features s s s s s Small hermetically sealed glass SMD package High switching speed: 4 ns Continuous reverse voltage: 75 V Repetitive peak reverse voltage: 100 V Repetitive peak forward current: 450 mA 1.3 Applications s High-speed switching s Inverse-polarity protection 1.4 Quick reference data Table 1: Symbol IF IFRM VR VF trr [1] [2] Quick reference data Parameter forward current repetitive peak forward current reverse voltage forward voltage reverse recovery time IF = 100 mA [2] Conditions [1] Min - Typ - Max 200 450 75 1000 4 Unit mA mA V mV ns Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA Philips Semiconductors BAS32L High-speed switching diode 2. Pinning information Table 2: Pin 1 2 Pinning Description cathode anode [1] Simplified outline Symbol k a sym006 [1] The marking band indicates the cathode. 3. Ordering information Table 3: Ordering information Package Name BAS32L Description hermetically sealed glass surface mounted package; 2 connectors Version SOD80C Type number 4. Marking Table 4: BAS32L [1] black: made in Philippines brown: made in China Marking codes Marking code [1] Marking band Type number 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VRRM VR IF IFRM IFSM Parameter repetitive peak reverse voltage reverse voltage forward current repetitive peak forward current non-repetitive peak forward current square wave tp = 1 s tp = 1 ms tp = 1 s Ptot total power dissipation Tamb = 25 C [1] [2] [1] Conditions Min - Max 100 75 200 450 Unit V V mA mA - 4 1 0.5 500 A A A mW 9397 750 14605 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 -- 22 March 2005 2 of 11 Philips Semiconductors BAS32L High-speed switching diode Table 5: Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Tj Tamb Tstg [1] [2] Parameter junction temperature ambient temperature storage temperature Conditions Min -65 -65 Max 200 +200 +200 Unit C C C Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Tj = 25 C prior to surge 6. Thermal characteristics Table 6: Symbol Rth(j-a) Rth(j-sp) [1] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air [1] Min - Typ - Max 350 300 Unit K/W K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 7: Characteristics Tamb = 25 C unless otherwise specified. Symbol VF Parameter forward voltage Conditions IF = 5 mA IF = 100 mA IF = 100 mA; Tj = 100 C IR reverse current VR = 20 V VR = 75 V VR = 20 V; Tj = 150 C VR = 75 V; Tj = 150 C Cd trr VFR [1] [2] Min 620 [1] Typ - Max 750 1000 930 25 5 50 100 2 4 2.5 Unit mV mV mV nA A A A pF ns V diode capacitance reverse recovery time forward recovery voltage VR = 0 V; f = 1 MHz - [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA When switched from IF = 50 mA; tr = 20 ns 9397 750 14605 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 -- 22 March 2005 3 of 11 Philips Semiconductors BAS32L High-speed switching diode 300 IF (mA) 200 mbg451 600 IF (mA) mbg464 400 (1) (2) (3) 100 200 0 0 100 Tamb (C) 200 0 0 1 VF (V) 2 Mounted on an FR4 PCB; standard footprint (1) Tj = 175 C; typical values (2) Tj = 25 C; typical values (3) Tj = 25 C; maximum values Fig 1. Maximum permissible forward current as a function of ambient temperature 102 IFSM (A) 10 mbg704 Fig 2. Forward current as a function of forward voltage 103 IR (mA) 102 mgd006 (1) (2) (3) 10 1 1 10-1 10-1 1 10 102 103 tp (s) 104 10-2 0 100 Tj (oC) 200 Based on square wave currents Tj = 25 C prior to surge (1) VR = 75 V; maximum values (2) VR = 75 V; typical values (3) VR = 20 V; typical values Fig 3. Maximum permissible non-repetitive peak forward current as a function of pulse duration Fig 4. Reverse current as a function of junction temperature 9397 750 14605 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 -- 22 March 2005 4 of 11 Philips Semiconductors BAS32L High-speed switching diode 1.2 Cd (pF) 1.0 mgd004 0.8 0.6 0.4 0 10 VR (V) 20 Tj = 25 C; f = 1 MHz Fig 5. Diode capacitance as a function of reverse voltage; typical values 9397 750 14605 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 -- 22 March 2005 5 of 11 Philips Semiconductors BAS32L High-speed switching diode 8. Test information tr D.U.T. RS = 50 V = VR + IF x RS IF SAMPLING OSCILLOSCOPE Ri = 50 VR mga881 tp t 10 % + IF trr t 90 % input signal output signal (1) Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor 0.05 Oscilloscope: Rise time tr = 0.35 ns (1) IR = 1 mA Fig 6. Reverse recovery time test circuit and waveforms I 1 k 450 I 90 % V RS = 50 D.U.T. OSCILLOSCOPE Ri = 50 10 % t tr tp input signal VFR t output signal mga882 Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty factor 0.005 Fig 7. Forward recovery voltage test circuit and waveforms 9397 750 14605 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 -- 22 March 2005 6 of 11 Philips Semiconductors BAS32L High-speed switching diode 9. Package outline Hermetically sealed glass surface mounted package; 2 connectors SOD80C k (1) a D L H L DIMENSIONS (mm are the original dimensions) 0 UNIT mm D 1.60 1.45 H 3.7 3.3 L 0.3 1 scale 2 mm Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD80C REFERENCES IEC 100H01 JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 97-06-20 05-01-26 Fig 8. Package outline SOD80C 10. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number BAS32L [1] Package SOD80C Description 4 mm pitch, 8 mm tape and reel Packing quantity 2500 -115 10000 -135 For further information and the availability of packing methods, see Section 16. 9397 750 14605 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 -- 22 March 2005 7 of 11 Philips Semiconductors BAS32L High-speed switching diode 11. Soldering 4.55 4.30 2.30 solder lands solder resist 2.25 1.70 1.60 occupied area solder paste 0.90 (2x) MSA435 Dimensions in mm Fig 9. Reflow soldering footprint SOD80C 6.30 4.90 2.70 1.90 solder lands solder resist 2.90 1.70 occupied area tracks MSA461 Dimensions in mm Fig 10. Wave soldering footprint SOD80C 9397 750 14605 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 -- 22 March 2005 8 of 11 Philips Semiconductors BAS32L High-speed switching diode 12. Revision history Table 9: BAS32L_4 Modifications: Revision history Release date 20050322 Data sheet status Product data sheet Change notice Doc. number 9397 750 14605 Supersedes BAS32L_3 Document ID * * * * * The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. Section 4 "Marking" added Table 6 "Thermal characteristics" Rth(j-tp) thermal resistance from junction to tie-point redefined to Rth(j-sp) thermal resistance from junction to solder point Section 10 "Packing information" added Section 11 "Soldering" added Product specification Product specification Product specification 9397 750 09264 117021 113051 BAS32L_2 BAS32L_1 - BAS32L_3 BAS32L_2 BAS32L_1 20020123 19960910 19960423 9397 750 14605 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 -- 22 March 2005 9 of 11 Philips Semiconductors BAS32L High-speed switching diode 13. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 15. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14605 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 -- 22 March 2005 10 of 11 Philips Semiconductors BAS32L High-speed switching diode 17. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information . . . . . . . . . . . . . . . . . . . . 10 (c) Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 March 2005 Document number: 9397 750 14605 Published in The Netherlands |
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