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APTM50UM09FAG
Single Switch MOSFET Power Module
SK S D
VDSS = 500V RDSon = 9 m typ @ Tj = 25C ID = 497A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration * AlN substrate for improved thermal performance Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant
G
DK
DK
S
D
SK G
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
Max ratings 500 497 371 1988 30 10 5000 71 50 3000
Unit V A V m W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM50UM09FAG Rev 1
July, 2006
APTM50UM09FAG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Tj = 25C VGS = 0V,VDS = 400V Tj = 125C VGS = 10V, ID = 248.5A VGS = VDS, ID = 30mA VGS = 30 V, VDS = 0V
VGS = 0V,VDS = 500V
Typ
9 3
Max 600 3000 10 5 450
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID =497A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 497A R G = 0.5 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 497A, R G = 0.5 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 497A, R G = 0.5
Min
Typ 63.3 12.4 0.63 1200 300 630 21 42 96 100 6 6.2 9.48 6.96
Max
Unit nF
nC
ns
mJ
mJ
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25C Tc = 80C VGS = 0V, IS = - 497A IS = - 497A VR = 333V diS/dt = 600A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Max 497 371 1.3 18 300 600
Unit A V V/ns ns C
July, 2006 2-6 APTM50UM09FAG Rev 1
15.6 60
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 497A di/dt 700A/s VR VDSS Tj 150C
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APTM50UM09FAG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3 2
Typ
Max 0.025 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink For teminals M6 M5
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTM50UM09FAG Rev 1
July, 2006
APTM50UM09FAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.03 Thermal Impedance (C/W) 0.025 0.02 0.015 0.01 0.005 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1200
VGS =10&15V 7.5V
1080 ID, Drain Current (A)
7V
Transfert Characteristics
VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
960 840 720 600 480 360 240 120 0 0
ID, Drain Current (A)
900
6.5V
600
6V
300 0 0
T J=25C TJ=125C
5.5V 5V
T J=-55C
5 10 15 20 25 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 520
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
Normalized to VGS=10V @ 248.5A
416 312 208 104 0
VGS=10V
VGS =20V
180
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APTM50UM09FAG Rev 1
July, 2006
360 540 720 900 I D, Drain Current (A)
1080
25
50 75 100 125 TC, Case Temperature (C)
150
APTM50UM09FAG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 10000 I D, Drain Current (A)
VGS=10V ID=248.5A
1.05
0.95
0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2
VGS(TH), Threshold Voltage (Normalized)
1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C)
1000
limited by RDSon
100 us
100 Single pulse TJ=150C TC=25C 1
1 ms 10 ms
10
1 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) Coss 10000
Gate Charge vs Gate to Source Voltage 14 12 10 8 6 4 2 0 0 250 500 750 1000 1250 1500 Gate Charge (nC)
July, 2006
I D=497A TJ =25C
VDS=100V V DS =250V VDS=400V
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-6
APTM50UM09FAG Rev 1
APTM50UM09FAG
Delay Times vs Current 110 90 70 50 30 td(on) 160
VDS=333V RG=0.5 TJ=125C L=100H
Rise and Fall times vs Current
td(on) and t d(off) (ns)
t r and tf (ns)
VDS=333V RG=0.5 TJ=125C L=100H
td(off)
120 80
tf
tr
40
10 100 200 300 400 500 600 700 800 I D, Drain Current (A) Switching Energy vs Current 18 Switching Energy (mJ) 15 12 9 6 3 0 100 200 300 400 500 600 700 800 I D, Drain Current (A) Operating Frequency vs Drain Current 300 Frequency (kHz) 250 200 150 100 50 0 50 100 150 200 250 300 350 400 450 I D, Drain Current (A)
VDS=333V D=50% RG=0.5 TJ=125C TC=75C ZCS ZVS
0 100 200 300 400 500 600 700 800 ID, Drain Current (A) Switching Energy vs Gate Resistance 38 34 30 26 22 18 14 10 6 0 1 2 Eoff 3 4 5 6 7 8 9 Eon
VDS=333V ID=497A TJ=125C L=100H
Eon
Eoff
Switching Energy (mJ)
V DS=333V RG=0.5 T J=125C L=100H
Eoff
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 10000
IDR, Reverse Drain Current (A)
350
1000
T J=150C
100
T J=25C
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
July, 2006
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM50UM09FAG Rev 1

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