View APTM50HM65FT_1212706.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTM50HM65FT
Full - Bridge MOSFET Power Module
VBUS Q1 Q3
VDSS = 500V RDSon = 65mW max @ Tj = 25C ID = 51A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies
G1 S1 Q2 OUT1 OUT2 Q4
G3 S3
G2 S2 NTC1 0/VBU S NTC2
G4 S4
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile
G3 S3
G4 S4
OUT2
VBUS
0/VBUS
OUT1
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 500 51 38 204 30 65 390 51 50 3000 Unit V A V mW W A mJ
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM50HM65FT - Rev 1 May, 2004
APTM50HM65FT
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Min 500 Tj = 25C Tj = 125C 3
Typ
Max 250 1000 65 5 100
Unit V A mW V nA
VGS = 10V, ID = 25.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 51A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 51A RG = 3W Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 51A, RG = 3 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 51A, RG = 3 Min Typ 7000 1400 90 140 40 70 21 38 75 93 1035 845 1556 1013 J J ns Max Unit pF
nC
Source - Drain diode ratings and characteristics
Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 51A IS = - 51A VR = 250V diS/dt = 100A/s IS = - 51A VR = 250V diS/dt = 100A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 2.6 9.6 Min Typ Max 51 38 1.3 15 270 540 Unit A V V/ns ns C
APTM50HM65FT - Rev 1 May, 2004
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR VDSS Tj 150C IS - 51A di/dt 700A/s
APT website - http://www.advancedpower.com
2-6
APTM50HM65FT
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40
Typ
Max 0.32 150 125 100 4.7 160
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
RT = e ae1 1 ou T: Thermistor temperature exp e B25 / 85 c c T - T /u RT: Thermistor value at T / e 25 ou e R 25
Min
Typ 68 4080
Max
Unit kW K
Package outline
APT website - http://www.advancedpower.com
3-6
APTM50HM65FT - Rev 1 May, 2004
APTM50HM65FT
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0.0001 0.001 0.9 0.7 0.5
Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 200 ID, Drain Current (A) 160 120 80 40 5.5V 0 0 VGS=10&15V ID, Drain Current (A) 8V 150 125 100 75 50 25 0 25 0 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 60 ID, DC Drain Current (A)
Normalized to VGS=10V @ 25.5A
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
7V 6.5V 6V 5V
TJ=25C
TJ=125C
TJ=-55C
5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current
RDS(on) Drain to Source ON Resistance
1.1
1.05
50 40 30 20 10 0
VGS=10V
1 VGS=20V 0.95
0.9 0 10 20 30 40 50 ID, Drain Current (A) 60
25
50 75 100 125 TC, Case Temperature (C)
150
APTM50HM65FT - Rev 1 May, 2004
APT website - http://www.advancedpower.com
4-6
APTM50HM65FT
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss 1000 Crss 1000 ID, Drain Current (A) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID= 25.5A
100
limited by RDSon
100 us 1 ms 10 ms
10
1
Single pulse TJ=150C 1
100 ms
0.1 10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 Gate Charge (nC)
VDS=400V
ID=51A TJ=25C
VDS=100V VDS=250V
10000
100
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
APT website - http://www.advancedpower.com
5-6
APTM50HM65FT - Rev 1 May, 2004
APTM50HM65FT
Delay Times vs Current 80 70 td(on) and td(off) (ns) 60 50 40 30 20 10 10 20 30 40 50 60 70 80 ID, Drain Current (A) Switching Energy vs Current 3 Switching Energy (mJ) 2.5 2 1.5 1 0.5 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 Eon Switching Energy (mJ)
VDS=333V RG=3 TJ=125C L=100H VDS=333V RG=3 TJ=125C L=100H
Rise and Fall times vs Current 160 140 120 tr and tf (ns) 100 80 60 40 20 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80
VDS=333V RG=3 TJ=125C L=100H
td(off)
tf
tr
td(on)
Switching Energy vs Gate Resistance 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
VDS=333V ID=51A TJ=125C L=100H
Eoff
Eon
Eoff
Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 10 15 20 25 30 35 ID, Drain Current (A) 40 45
VDS=333V D=50% RG=3 TJ=125C
IDR, Reverse Drain Current (A)
400
100
TJ=150C TJ=25C
10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
6-6
APTM50HM65FT - Rev 1 May, 2004

▲Up To Search▲

Price & Availability of APTM50HM65FT

	To Download APTM50HM65FT Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .