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APTM50DUM38TG
Dual common source MOSFET Power Module
VDSS = 500V RDSon = 38m typ @ Tj = 25C ID = 90A @ Tc = 25C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant
D1 Q1
D2 Q2
G1
G2
S1 S NTC1
S2
NTC2
G2 S2
D2
D1
S
D2
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM50DUM38TG - Rev 3
Max ratings 500 90 67 360 30 45 694 46 50 2500
Unit V A V m W A mJ
July, 2006
APTM50DUM38TG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Typ
Tj = 25C
T j = 125C
VGS = 10V, ID = 45A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
38 3
Max 200 1000 45 5 150
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 90A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 90A R G = 2 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 90A, R G = 2 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 90A, R G = 2
Min
Typ 11.2 2.4 0.18 246 66 130 18 35 87 77 1510 1452 2482 1692
Max
Unit nF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ
VGS = 0V, IS = - 90A IS = - 90A, VR = 333V diS/dt = 200A/s 680 28.5
Max 90 67 1.3 8
Unit A V V/ns ns C
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2-6
APTM50DUM38TG - Rev 3
July, 2006
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 90A di/dt 700A/s VR VDSS Tj 150C
APTM50DUM38TG
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 2.5
Typ
Max 0.18 150 125 100 4.7 160
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTM50DUM38TG - Rev 3
July, 2006
APTM50DUM38TG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 Thermal Impedance (C/W) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.9 0.7 0.5 0.3
0.1 0.02 0.05 0 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
Low Voltage Output Characteristics 350 I D, Drain Current (A) I D, Drain Current (A) 300 250 200 150 100 50 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A)
Normalized to VGS=10V @ 45A VGS=10V VGS=10&15V 8V 7.5V 7V 6.5V 6V 5.5V
Transfert Characteristics 250 200 150 100
TJ=25C VDS > ID(on)xR DS(on)MAX 250s pulse test @ < 0.5 duty cycle
50
T J=125C
0 25 0
TJ=-55C
1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V)
8
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0
DC Drain Current vs Case Temperature 100 80 60 40 20 0
V GS=20V
50
100
150
200
25
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APTM50DUM38TG - Rev 3
July, 2006
ID, Drain Current (A)
50 75 100 125 TC, Case Temperature (C)
150
APTM50DUM38TG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000
Ciss
2.5 2.0 1.5 1.0 0.5 0.0
ON resistance vs Temperature
VGS =10V ID=45A
-50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
1000
100s
limited by R DSon
100
limited by RDSon
10
Single pulse TJ =150C TC=25C 1
1ms 10ms
1 10 100 1000 VDS, Drain to Source Voltage (V)
VGS , Gate to Source Voltage (V)
C, Capacitance (pF)
10000
Coss
Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=90A 12 T =25C J V =250V
DS
10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC)
July, 2006
VDS=400V
1000
Crss
100
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
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5-6
APTM50DUM38TG - Rev 3
APTM50DUM38TG
Delay Times vs Current 100
td(off)
Rise and Fall times vs Current
120 100
VDS=333V RG=2 T J=125C L=100H
t d(on) and td(off) (ns)
80 60 40 20 0 20 40 60 80 100 120 ID, Drain Current (A) 140
V DS =333V RG =2 T J=125C L=100H td(on)
tf
tr and t f (ns)
80 60 40 20 0 20
tr
40
60
80
100
120
140
I D, Drain Current (A) Switching Energy vs Gate Resistance
Switching Energy vs Current
5
Switching Energy (mJ)
8
Switching Energy (mJ)
4 3 2 1 0 20
VDS=333V RG=2 T J=125C L=100H
Eon
7 6 5 4 3 2 1 0 0
VDS=333V ID=90A TJ=125C L=100H
Eoff
Eoff
Eon Eoff 5 10 15 20 25
40
60
80
100
120
140
I D, Drain Current (A) Operating Frequency vs Drain Current
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
350
Frequency (kHz)
ZVS
300 250 200 150 100 50 0 20 30 40 50 60
Hard switching
V DS=333V D=50% R G=2 T J=125C T C=75C
IDR, Reverse Drain Current (A)
400
1000
T J=150C
100
ZCS
10
TJ=25C
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
July, 2006
70
80
ID, Drain Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM50DUM38TG - Rev 3

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