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APTM50AM17F
Phase leg MOSFET Power Module
VDSS = 500V RDSon = 17mW max @ Tj = 25C ID = 180A @ Tc = 25C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
* * *
VBUS 0/VBUS OUT
G1 S1
Benefits * * * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
S2 G2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 500 180 135 720 30 17 1250 51 50 3000 Unit V A V mW W A mJ
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTM50AM17F- Rev 1 May, 2004
APTM50AM17F
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 500A
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Min 500 Tj = 25C Tj = 125C 3
Typ
Max 1000 2000 17 5 200
Unit V A mW V nA
VGS = 10V, ID = 90A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 180A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 180A RG = 0.5W Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 180A, RG = 0.5 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 180A, RG = 0.5 Min Typ 28 5.6 0.36 560 160 280 21 38 75 93 4140 3380 6224 4052 J J ns Max Unit nF
nC
Source - Drain diode ratings and characteristics
Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 180A IS = -180A VR = 250V diS/dt = 400A/s IS = -180A VR = 250V diS/dt = 400A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 10.4 38.4 Min Typ Max 180 135 1.3 15 270 540 Unit A V V/ns ns C
APTM50AM17F- Rev 1 May, 2004
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR VDSS Tj 150C IS - 180A di/dt 700A/s
APT website - http://www.advancedpower.com
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APTM50AM17F
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3 2
Typ
Max 0.1 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
Package outline
APT website - http://www.advancedpower.com
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APTM50AM17F- Rev 1 May, 2004
APTM50AM17F
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 800 ID, Drain Current (A) VGS=10&15V ID, Drain Current (A) 8V 600 500 400 300 200 100 0 25 0 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 180 ID, DC Drain Current (A)
Normalized to VGS=10V @ 90A
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
600
7V 400 6.5V 6V 5.5V 0 0 5V
TJ=25C
200
TJ=125C
TJ=-55C
5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current
RDS(on) Drain to Source ON Resistance
1.1
160 140 120 100 80 60 40 20 0 25 50 75 100 125 TC, Case Temperature (C) 150
1.05
VGS=10V
1 VGS=20V 0.95
0.9 0 50 100 150 200 ID, Drain Current (A) 250
APT website - http://www.advancedpower.com
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APTM50AM17F- Rev 1 May, 2004
APTM50AM17F
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss 1000 ID, Drain Current (A) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
limited by RDSon
VGS=10V ID=90A
100 us
100 1 ms 10 Single pulse TJ=150C 1 1 10 100 1000 VDS, Drain to Source Voltage (V) 10 ms 100 ms
Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 100 200 300 400 500 600 700 Gate Charge (nC)
VDS=400V
ID=180A TJ=25C
VDS=100V VDS=250V
1000 Crss 100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
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APTM50AM17F- Rev 1 May, 2004
APTM50AM17F
Delay Times vs Current 80 70 td(on) and td(off) (ns) 60 50 40 30 20 10 40 80 120 160 200 240 280 ID, Drain Current (A) Switching Energy vs Current 12 Switching Energy (mJ) 10 8 6 4 2 0 40 80 120 160 200 240 ID, Drain Current (A) 280 Eon Switching Energy (mJ)
VDS=333V RG=0.5 TJ=125C L=100H VDS=333V RG=0.5 TJ=125C L=100H
Rise and Fall times vs Current 160 140 120 tr and tf (ns) 100 80 60 40 20 0 40 80 120 160 200 240 ID, Drain Current (A) 280
VDS=333V RG=0.5 TJ=125C L=100H
td(off)
tf
tr
td(on)
Switching Energy vs Gate Resistance 20 16 12 8 4 0 0 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150C 100 TJ=25C
VDS=333V ID=180A TJ=125C L=100H
Eoff
Eon
Eoff
Operating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 20 40 60 80 100 120 140 160 ID, Drain Current (A)
VDS=333V D=50% RG=0.5 TJ=125C
IDR, Reverse Drain Current (A)
450
10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTM50AM17F- Rev 1 May, 2004

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