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APTGF75DSK120TG Dual Buck Chopper NPT IGBT Power Module VBUS VCES = 1200V IC = 75A @ Tc = 80C Application * AC and DC motor control * Switched Mode Power Supplies Q1 G1 Q2 G2 E1 E2 OUT1 OUT2 0/VBUS SENSE 0/VBUS SENSE NTC1 0/VBUS NTC2 Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS compliant Max ratings 1200 100 75 150 20 500 150A @ 1200V Unit V A V W July, 2006 1-5 APTGF75DSK120TG - Rev 1 G2 E2 0/VBUS SENSE OUT2 VBUS 0/VBUS OUT1 E1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF75DSK120TG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 75A Tj = 125C VGE = VCE, IC = 2.5 mA VGE = 20V, VCE = 0V Min Typ Max 250 500 3.7 6.5 500 Unit A V V nA 3.2 3.9 4.5 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 75A R G = 7.5 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 75A R G = 7.5 VGE = 15V Tj = 125C VBus = 600V IC = 75A Tj = 125C R G = 7.5 Test Conditions Tj = 25C Tj = 125C Tc = 70C IF = 100A IF = 200A IF = 100A IF = 100A VR = 800V di/dt =200A/s Min Typ 5.1 0.7 0.4 120 50 310 20 130 60 360 30 9 Max Unit nF ns ns mJ 4 Diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Maximum Peak Repetitive Reverse Voltage Min 1200 Typ Max 250 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=1200V 100 2.0 2.3 1.8 420 580 1.2 5.3 2.5 V Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C www.microsemi.com 2-5 APTGF75DSK120TG - Rev 1 Qrr Reverse Recovery Charge C July, 2006 trr Reverse Recovery Time ns APTGF75DSK120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.25 0.6 150 125 100 4.7 160 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M5 2500 -40 -40 -40 2.5 SP4 Package outline (dimensions in mm) ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGF75DSK120TG - Rev 1 July, 2006 APTGF75DSK120TG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 150 125 100 IC (A) VGE=12V TJ = 125C VGE =20V VGE =15V 150 125 100 IC (A) TJ=25C 75 50 25 0 0 1 2 3 V CE (V) 4 5 6 T J=125C 75 50 25 0 0 1 2 3 4 VCE (V) 5 6 VGE =9V 150 125 100 Transfert Characteristics 28 24 20 E (mJ) TJ=125C Energy losses vs Collector Current VCE = 600V VGE = 15V RG = 7.5 TJ = 125C Eon IC (A) 75 50 25 0 5 6 7 16 12 8 T J=25C 4 0 0 25 50 75 IC (A) 100 Eoff 8 9 10 11 12 125 150 VGE (V) Switching Energy Losses vs Gate Resistance 35 30 25 E (mJ) 20 15 10 5 0 0 10 20 30 40 50 Gate Resistance (ohms) 60 70 Eoff VCE = 600V VGE =15V IC = 75A T J = 125C Reverse Bias Safe Operating Area 175 150 Eon 125 IC (A) 100 75 50 25 0 0 300 600 900 1200 1500 VCE (V) VGE=15V T J=125C RG=7.5 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse IGBT 0 0.00001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGF75DSK120TG - Rev 1 July, 2006 APTGF75DSK120TG Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 90 80 70 60 50 40 30 20 10 0 0 ZCS hard switching Forward Characteristic of diode 250 ZVS IF (A) VCE=600V D=50% RG=7.5 TJ =125C TC=75C 200 150 100 50 0 T J=25C T J=125C 20 40 60 IC (A) 80 100 0 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 Diode 0 0.00001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF75DSK120TG - Rev 1 July, 2006 |
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