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APTGF180H60G
Full - bridge NPT IGBT Power Module
VBUS Q1 G1 Q3 G3
VCES = 600V IC = 180A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS compliant Max ratings 600 220 180 630 20 833 400A @ 600V Unit V A V W
E1
OUT1 OUT2
E3
Q2 G2
Q4 G4
E2
E4
0/VBUS
OUT1 G1 E1 VBUS 0/VBUS G2 E2
E3 G3 OUT2
E4 G4
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF180H60G - Rev 2 July, 2006
APTGF180H60G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V Tj = 25C VCE = 600V Tj = 125C Tj = 25C VGE =15V IC = 180A Tj = 125C VGE = VCE, IC = 2mA VGE = 20 V, VCE = 0V Min Typ Max 300 1000 2.5 5 200 Unit A V V nA
2.0 2.2 3
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 300V IC = 180A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 180A R G = 2.5 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 180A R G = 2.5 VGE = 15V Tj = 125C VBus = 400V IC = 180A Tj = 125C R G = 2.5
Min
Typ 8.6 0.94 0.8 660 580 400 26 25 150 30 26 25 170 40 8.6
Max
Unit nF
nC
ns
ns
mJ 7
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=600V IF = 200A IF = 400A IF = 200A IF = 200A VR = 400V di/dt =400A/s Tj = 25C Tj = 125C Tc = 80C
Min 600
Typ
Max 350 750
Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
200 1.6 1.9 1.4 180 220 780 2900
1.8 V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTGF180H60G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.15 0.32 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTGF180H60G
Typical Performance Curve
Output characteristics (VGE=15V) 600 Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle TJ=-55C
Output Characteristics (VGE=10V)
600 Ic, Collector Current (A)
TJ=25C
500 400 300
500 400
250s Pulse Test < 0.5% Duty cycle
TJ=-55C
TJ=25C
TJ=125C
300 200
TJ=125C
200 100 0 0 1 2 3 4 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 600
100 0 0 1 2 3 VCE, Collector to Emitter Voltage (V)
Gate Charge
IC = 180A TJ = 25C V CE =300V VCE=120V
4
18 VGE, Gate to Emitter Voltage (V)
250s Pulse Test < 0.5% Duty cycle
Ic, Collector Current (A)
500 400 300 200 100 0 0
16 14 12 10 8 6 4 2 0 0
V CE =480V
TJ=125C TJ=25C TJ=-55C
1
23456789 VGE, Gate to Emitter Voltage (V)
10
100
200
300
400
500
600
700
Gate Charge (nC)
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt. 8 7 6 5 4 3 2 1 0 6 8 10 12 14 16 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp.
Ic=90A Ic=180A TJ = 25C 250s Pulse Test < 0.5% Duty cycle
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125
Ic=90A 250s Pulse Test < 0.5% Duty cycle V GE = 15V Ic=180A Ic=360A
Ic=360A
DC Collector Current vs Case Temperature
Collector to Emitter Breakdown Voltage (Normalized)
1.20
300 Ic, DC Collector Current (A) 250 200 150 100 50 0 -50 -25 0 25 50 75 100 125 150
TC , Case Temperature (C)
1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C)
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APTGF180H60G
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 35 250 Turn-Off Delay Time vs Collector Current
30
VGE = 15V
200 150
VGE=15V, TJ=125C
25
Tj = 25C VCE = 400V RG = 2.5
20
100
VCE = 400V RG = 2.5
VGE=15V, TJ=25C
15 50 100 150 200 250 300 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 80
VCE = 400V R G = 2.5 VGE=15V, TJ=125C
50 50 100 150 200 250 300 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 2.5
80
tr, Rise Time (ns)
tf, Fall Time (ns)
60
60
TJ = 125C
40
40
20
20
TJ = 25C
0 50 100 150 200 250 ICE, Collector to Emitter Current (A) 300
0 50 100 150 200 250 ICE, Collector to Emitter Current (A) 300
Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ)
16
Eon, Turn-On Energy Loss (mJ)
12 10 8 6 4 2 0
Turn-Off Energy Loss vs Collector Current
VCE = 400V VGE = 15V RG = 2.5 TJ = 125C
12 8 4 0 50
VCE = 400V RG = 2.5
T J=125C, VGE=15V
TJ=25C, VGE=15V
TJ = 25C
100
150
200
250
300
50
ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 32 Switching Energy Losses (mJ)
VCE = 400V VGE = 15V T J= 125C Eon, 360A Eoff, 360A Eoff, 180A
100 150 200 250 ICE, Collector to Emitter Current (A)
300
Switching Energy Losses vs Junction Temp. Switching Energy Losses (mJ)
20
VCE = 400V
24
16 12 8 4
V GE = 15V RG = 2.5
Eon, 360A
Eoff, 360A
16
Eon, 180A Eoff, 90A
Eon, 180A Eoff, 180A Eoff, 90A Eon, 90A
Eon, 90A
0 0 5 10 15 20 Gate Resistance (Ohms) 25
0 0 25 50 75 100 125
TJ, Junction Temperature (C)
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APTGF180H60G - Rev 2 July, 2006
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APTGF180H60G
Capacitance vs Collector to Emitter Voltage 100000 IC, Collector Current (A) C, Capacitance (pF) 450 400 350 300 250 200 150 100 50 0 0 10 20 30 40 50 0 200 400 600 800 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) Reverse Bias Safe Operating Area
10000
Cies
1000
Coes Cres
100
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 Thermal Impedance (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.1 0.05 0.0001 0.9 0.7 0.5 0.3 Single Pulse
0 0.00001
0.001 0.01 0.1 Rectangular Pulse Duration (Seconds)
1
10
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 180 150 120
ZCS VC E = 400V D = 50% R G = 2.5 TJ = 125C Tc=75C
90 60 30 0 40
Hard switching ZVS
80
120 160 200 IC, Collector Current (A)
240
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF180H60G - Rev 2 July, 2006

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