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APTGF100A120TG Phase leg NPT IGBT Power Module VBUS Q1 G1 NTC2 VCES = 1200V IC = 100A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS compliant Max ratings 1200 135 100 300 20 568 200A @ 1200V Unit V A V W July, 2006 1-6 APTGF100A120TG - Rev 2 E1 OUT Q2 G2 E2 0/VBU S NTC1 G2 E2 OUT VBUS 0/VBUS OUT E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF100A120TG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V Tj = 25C VCE = 1200V Tj = 125C Tj = 25C VGE = 15V IC = 100A Tj = 125C VGE = VCE, IC = 2 mA VGE = 20 V, VCE = 0V Min Typ Max 350 600 3.7 6.5 150 Unit A V V nA 3.2 4.0 4.5 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 100A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 100A R G = 2.5 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 100A R G = 2.5 VGE = 15V Tj = 125C VBus = 600V IC = 100A Tj = 125C R G = 2.5 Min Typ 6900 660 440 660 70 400 35 65 320 30 35 65 360 40 13.9 6.1 Max Unit pF nC ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Test Conditions VR=1200V IF = 120A IF = 240A IF = 120A IF = 120A VR = 800V di/dt =800A/s Tj = 25C Tj = 125C Tc = 70C Min 1200 Typ Max 350 600 Unit V A A trr Qrr Reverse Recovery Time Reverse Recovery Charge Tj = 25C Tj = 125C Tj = 25C Tj = 125C 370 500 2.64 13.8 ns C www.microsemi.com 2-6 APTGF100A120TG - Rev 2 July, 2006 Tj = 125C 120 2.0 2.3 1.8 2.5 V APTGF100A120TG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.22 0.32 150 125 100 4.7 160 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M5 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGF100A120TG - Rev 2 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : July, 2006 APTGF100A120TG Typical Performance Curve 400 Ic, Collector Current (A) 320 240 160 80 0 0 2 4 6 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 8 TJ=125C Output characteristics (VGE=15V) 250s Pulse Test < 0.5% Duty cycle TJ=25C 100 Ic, Collector Current (A) Output Characteristics (VGE=10V) 250s Pulse Test < 0.5% Duty cycle TJ=25C 80 60 40 TJ=125C 20 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge 4 600 Ic, Collector Current (A) 18 16 14 12 10 8 6 4 2 0 0 100 200 300 400 IC = 100A TJ = 25C VCE=600V 500 400 300 200 100 0 0 250s Pulse Test < 0.5% Duty cycle VCE =240V TJ=25C VCE=960V TJ=125C TJ=25C 4 8 12 VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. TJ = 25C 250s Pulse Test < 0.5% Duty cycle 16 500 600 700 Gate Charge (nC) On state Voltage vs Junction Temperature 250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=200A Ic=100A VCE, Collector to Emitter Voltage (V) 9 8 7 6 5 4 3 2 1 0 9 VCE, Collector to Emitter Voltage (V) 6 5 4 3 2 1 0 Ic=200A Ic=100A Ic=50A Ic=50A 10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. 16 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125 Collector to Emitter Breakdown Voltage (Normalized) 1.20 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 Ic, DC Collector Current (A) 180 160 140 120 100 80 60 40 20 0 DC Collector Current vs Case Temperature 1.15 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125 -50 -25 0 25 50 75 100 125 150 TC , Case Temperature (C) www.microsemi.com 4-6 APTGF100A120TG - Rev 2 July, 2006 APTGF100A120TG Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) VCE = 600V R G = 2.5 VGE = 15V Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) 45 400 VGE=15V, TJ=125C 40 350 35 300 VGE=15V, TJ=25C 30 250 VCE = 600V RG = 2.5 25 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 200 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current 180 VCE = 600V RG = 2.5 tf, Fall Time (ns) 50 TJ = 125C tr, Rise Time (ns) 140 40 100 VGE=15V 60 30 T J = 25C VCE = 600V, VGE = 15V, RG = 2.5 20 0 50 100 150 200 ICE, Collector to Emitter Current (A) 250 20 0 50 100 150 200 ICE, Collector to Emitter Current (A) 250 Eon, Turn-On Energy Loss (mJ) 48 40 32 24 16 8 0 0 VCE = 600V RG = 2.5 TJ=125C, VGE=15V Eoff, Turn-off Energy Loss (mJ) 56 Turn-On Energy Loss vs Collector Current Turn-Off Energy Loss vs Collector Current 16 VCE = 600V VGE = 15V R G = 2.5 TJ = 125C 12 8 T J = 25C TJ=25C, VGE=15V 4 0 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) 50 100 150 200 ICE, Collector to Emitter Current (A) 250 Switching Energy Losses (mJ) 32 28 24 20 16 12 8 4 0 0 VCE = 600V VGE = 15V TJ= 125C Switching Energy Losses (mJ) Switching Energy Losses vs Gate Resistance 36 Eon, 100A 16 Switching Energy Losses vs Junction Temp. VCE = 600V VGE = 15V RG = 2.5 Eon, 100A 12 Eoff, 100A 8 Eoff, 100A Eon, 50A Eoff, 50A Eon, 50A 4 0 5 10 15 20 Gate Resistance (Ohms) 25 0 25 50 75 100 TJ, Junction Temperature (C) 125 www.microsemi.com 5-6 APTGF100A120TG - Rev 2 Eoff, 50A July, 2006 APTGF100A120TG Capacitance vs Collector to Emitter Voltage 10000 Cies Reverse Bias Safe Operating Area 250 IC, Collector Current (A) 200 150 100 50 0 C, Capacitance (pF) 1000 Coes Cres 100 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50 0 400 800 1200 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (C/W) 0.2 0.15 0.5 0.1 0.05 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 0.7 0.05 0 0.00001 Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 120 100 80 60 40 20 0 10 30 50 70 90 IC, Collector Current (A) 110 Hard switching ZCS ZVS VCE = 600V D = 50% RG = 2.5 TJ = 125C TC = 75C Fmax, Operating Frequency (kHz) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGF100A120TG - Rev 2 Microsemi reserves the right to change, without notice, the specifications and information contained herein July, 2006 |
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