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APTC60AM35SCT
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
NTC2 VBUS Q1
VDSS = 600V RDSon = 35mW max @ Tj = 25C ID = 72A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features *
G1 OUT S1 Q2
*
Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated
G2
0/VBU S S2 NTC1
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
* * * *
OUT VBUS OUT
0/VBUS
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile Max ratings 600 72 54 288 30 35 416 20 1 1800 Unit V A
APTC60AM35SCT - Rev 1 May, 2004
Tc = 25C Tc = 80C
Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy
Tc = 25C
V mW W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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APTC60AM35SCT
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 500A
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Min 600 Tj = 25C Tj = 125C 2.1
Typ
Max 50 500 35 3.9 150
Unit V A mW V nA
VGS = 10V, ID = 36A VGS = VDS, ID = 2mA VGS = 20 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy u Turn-on Switching Energy Turn-off Switching Energy u Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 72A Inductive switching @ 125C VGS = 15V VBus = 400V ID = 72A RG = 2.5W Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5 Min Typ 14 5.13 0.42 518 58 222 21 30 283 84 804 1960 1315 2412 J ns nC Max Unit nF
J
u In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 60A IF = 120A IF = 60A IF = 60A VR = 133V di/dt = 400A/s IF = 60A VR = 133V di/dt = 400A/s Min Tc = 85C Typ 60 1.1 1.4 0.9 24 48 66 300 Max 1.15 V
APTC60AM35SCT - Rev 1 May, 2004
Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTC60AM35SCT
Parallel diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF QC Q Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions
50% duty cycle
Min Tc = 125C Tj = 25C Tj = 175C
IF = 40A
Typ 40 1.6 2.0 56 260 200
Max 1.8 2.4
Unit A V nC pF
IF = 40A, VR = 300V di/dt =1200A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Transistor Series diode 2500 -40 -40 -40 Min Typ Max 0.3 0.65 0.8 150 125 100 4.7 160 Typ 68 4080 Max Unit
C/W
Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g Unit kW K
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
RT = R 25 e ae1 1 ou T: Thermistor temperature - /u RT: Thermistor value at T exp e B25 / 85 c cT / e 25 T ou e
Min
Package outline
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3-7
APTC60AM35SCT - Rev 1 May, 2004
APTC60AM35SCT
Typical CoolMOS Performance Curve
0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 400 360 320 280 240 200 160 120 80 40 0 0 280 6.5V 6V 5.5V 5V 4.5V 4V 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.1 1.05 1 0.95 0.9 0 20 40 60 80 100 120 ID, Drain Current (A) ID, DC Drain Current (A)
Normalized to VGS=10V @ 36A
Transfert Characteristics 240 200 160 120 80 40 0 25 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 TJ=125C TJ=25C TJ=-55C
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
ID, Drain Current (A)
ID, Drain Current (A)
VGS=15&10V
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 80 70 60 50 40 30 20 10 0 25 50 75 100 125 TC, Case Temperature (C) 150
APTC60AM35SCT - Rev 1 May, 2004
VGS=10V
VGS=20V
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APTC60AM35SCT
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss 1000 ID, Drain Current (A)
limited by RDSon
ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C)
Maximum Safe Operating Area
VGS=10V ID= 72A
100
100 s
10 DC line 1 Single pulse TJ=150C 1 10 100
1 ms 10 ms
0.1 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 ID=72A TJ=25C
VDS=120V VDS=300V VDS=480V
1000 Crss 100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-7
APTC60AM35SCT - Rev 1 May, 2004
APTC60AM35SCT
350 300
td(on) and td(off) (ns) Delay Times vs Current 120 Rise and Fall times vs Current
VDS=400V RG=2.5 TJ=125C L=100H
td(off)
VDS=400V RG=2.5 TJ=125C L=100H
100 tr and tf (ns) 80 60 40 20
250 200 150 100 50 0 0 20 40 60 80 100 120
ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0
VDS=400V RG=2.5 TJ=125C L=100H
tf
tr
td(on)
0 0 20 40 60 80 100 120 ID, Drain Current (A) Switching Energy vs Gate Resistance 10 Switching Energy (mJ) 8 6 4 Eon 2 0
VDS=400V ID=72A TJ=125C L=100H
Switching Energy (mJ)
Eoff
Eoff
Eon
20
40 60 80 100 ID, Drain Current (A)
120
0
5
10
15
20
25
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150C 100 TJ=25C 10
Operating Frequency vs Drain Current 120 Frequency (kHz) 100 80 60 40 20 0 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A)
VDS=400V D=50% RG=2.5 TJ=125C
IDR, Reverse Drain Current (A)
140
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
APTC60AM35SCT - Rev 1 May, 2004
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APTC60AM35SCT
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9
0 0.00001
Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 800 IR Reverse Current (A) 700 600 500 400 300 200 100 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 TJ=25C TJ=125C TJ=75C TJ=175C
80
IF Forward Current (A)
TJ=25C
TJ=75C
60 40 20 0 0 0.5
TJ=175C
TJ=125C
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
1600 1400 C, Capacitance (pF) 1200 1000 800 600 400 200 0 1
APTC60AM35SCT - Rev 1 May, 2004
10 100 VR Reverse Voltage
1000
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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