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800V 15A APT8052BFLL APT8052SFLL BFLL 0.520 POWER MOS 7 (R) R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 D3PAK TO-247 SFLL * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE D G S All Ratings: TC = 25C unless otherwise specified. APT8052BFLL_SFLL UNIT Volts Amps 800 15 60 30 40 298 2.38 -55 to 150 300 15 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 800 0.520 250 1000 100 3 5 (VGS = 10V, ID = 7.5A) Ohms A nA Volts 7-2004 050-7059 Rev B Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT8052BFLL_SFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 15A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 15A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 533V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 533V VGS = 15V ID = 15A, RG = 5 ID = 15A, RG = 5 RG = 1.6 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 2035 405 60 75 11 50 9 6 23 7 215 90 420 110 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 6 nC ns J SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns C Amps 15 60 1.3 18 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (VGS = 0V, IS = -15A) dv/ 5 dt t rr Q rr IRRM Reverse Recovery Time (IS = -15A, di/dt = 100A/s) Reverse Recovery Charge (IS = -15A, di/dt = 100A/s) Peak Recovery Current (IS = -15A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient 200 350 0.69 2.66 8 14 TYP MAX THERMAL CHARACTERISTICS Symbol RJC RJA UNIT C/W 0.42 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.45 , THERMAL IMPEDANCE (C/W) 4 Starting Tj = +25C, L = 10.76mH, RG = 25, Peak IL = 15A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID15A di/dt 700A/s VR 800 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.9 0.7 0.5 Note: PDM 7-2004 0.3 SINGLE PULSE 0.1 0.05 10-4 10-3 10-2 t1 t2 050-7059 Rev B JC Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2 Z 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 40 35 30 25 20 15 10 5 0 5.5V 5V 7V 6.5V VGS =15 &10 V APT8052BFLL_SFLL 8V RC MODEL Junction temp. (C) 0.164 Power (watts) 0.257 Case temperature. (C) 0.125F 0.00592F ID, DRAIN CURRENT (AMPERES) 6V RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 40 35 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V GS NORMALIZED TO = 10V @ I = 7.5A D 1.30 1.20 1.10 1.00 0.90 0.80 VGS=10V 30 25 20 15 10 5 0 TJ = +125C TJ = -55C TJ = +25C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS VGS=20V 0 16 14 ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1.15 5 10 15 20 25 30 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 12 10 8 6 4 2 0 25 1.10 1.05 1.00 0.95 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 I V D 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 = 7.5A = 10V 2.0 1.5 1.0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) GS 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7059 Rev B 7-2004 Typical Performance Curves 60 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 7,000 APT8052BFLL_SFLL Ciss 5 C, CAPACITANCE (pF) 10 100S 1,000 Coss 1 .5 TC =+25C TJ =+150C SINGLE PULSE 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I D 1mS 10mS 100 Crss .1 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 = 15A 100 12 VDS=100V TJ =+150C TJ =+25C 10 8 VDS=250V VDS=400V 4 20 40 60 80 100 120 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 60 50 td(off) 0 0 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 35 30 25 tf V DD G td(on) and td(off) (ns) 40 30 20 10 V DD G = 533V = 533V R = 5 tr and tf (ns) T = 125C J 20 15 10 5 0 R = 5 T = 125C J L = 100H L = 100H tr td(on) 0 5 15 20 25 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD G 10 700 600 SWITCHING ENERGY (J) = 533V 15 20 25 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1000 V I DD 5 10 = 533V R = 5 D J = 15A T = 125C J 500 400 300 200 100 0 E ON includes diode reverse recovery. SWITCHING ENERGY (J) L = 100H 800 T = 125C L = 100H EON includes diode reverse recovery. Eoff 600 Eon 400 Eon 7-2004 Eoff 200 050-7059 Rev B 15 20 25 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 5 10 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 0 5 Typical Performance Curves 90% 10% Gate Voltage TJ125C APT8052BFLL_SFLL td(off) Gate Voltage TJ125C td(on) Drain Current Drain Voltage 90% tr 90% 5% 10% Switching Energy 5% Drain Voltage tf 10% 0 Drain Current Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT15DF100 V DD ID V DS G D.U.T. Figure 20, Inductive Switching Test Circuit TO-247 Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15 (.045) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99 (.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7059 Rev B Gate Drain Source 5.45 (.215) BSC {2 Plcs.} Heat Sink (Drain) and Leads are Plated 7-2004 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 3.81 (.150) 4.06 (.160) (Base of Lead) |
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