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APT30M61BFLL APT30M61SFLL
300V 54A 0.061
POWER MOS 7
(R)
R
FREDFET
D3PAK
TO-247
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
* Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT30M61BFLL-SFLL UNIT Volts Amps
300 54 216 30 40 403 3.23 -55 to 150 300 54 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
300 0.061 250 1000 100 3 5
(VGS = 10V, 27A)
Ohms A nA Volts
1-2004 050-7163 Rev A
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT30M61BFLL - SFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 150V ID = 54A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 150V ID = 54A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 200V, VGS = 15V ID = 54A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 200V VGS = 15V ID = 54A, RG = 5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
3720 920 41 64 23 26 12 20 36 13 367 319 451 348
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
54 216 1.3 8
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -54A)
dv/ 5 dt
t rr
Reverse Recovery Time (IS = -54A, di/dt = 100A/s) Reverse Recovery Charge (IS = -54A, di/dt = 100A/s) Peak Recovery Current (IS = -54A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
225 400 1.0 4.2 10 20
TYP MAX
Q rr IRRM
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.31 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.35
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 0.89mH, RG = 25, Peak IL = 54A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID54A di/dt 700A/s VR 300 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30 0.25
0.9
0.7 0.20 0.5 0.15 0.10 0.05 0 0.3 Note:
PDM t1 t2
1-2004
050-7163 Rev A
JC
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z
10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-3
10-2
1.0
Typical Performance Curves
180 160
ID, DRAIN CURRENT (AMPERES)
APT30M61BFLL - SFLL
15V 10V
140 120 100 80 60 40 20 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 7V 6V 8V 9V
RC MODEL Junction temp. (C) 0.119 Power (watts) 0.191 Case temperature. (C) 0.319F 0.0135F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
160 140
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.40
NORMALIZED TO V = 10V @ 27A
GS
1.30
120 100 80 TJ = -55C 60 40 20 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 60 TJ = +25C TJ = +125C
1.20 VGS=10V 1.10
1.00 VGS=20V 0.90 0.80 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.20
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
50 40 30 20
1.15 1.10
1.05 1.00 0.95 0.90 -50
10 0
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
2.5
I V
D
= 27A = 10V
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
1.1 1.0
1.5
0.9 0.8 0.7
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6 -50
050-7163 Rev A
1-2004
Typical Performance Curves
216
ID, DRAIN CURRENT (AMPERES)
APT30M61BFLL - SFLL
10,000 5,000 100S Ciss
100
OPERATION HERE LIMITED BY RDS (ON)
C, CAPACITANCE (pF)
1,000
Coss
10 1mS
100 Crss
1
TC =+25C TJ =+150C SINGLE PULSE
10mS
1 5 10 50 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = 54
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16 14 12 10 8 6 4 2
200 100 50 TJ =+150C
VDS = 60V VDS = 150V
TJ =+25C
VDS = 240V
10 5
10 20 30 40 50 60 70 80 90 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 50 td(off) 40
td(on) and td(off) (ns)
V
DD G
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 90
V
DD G
= 200V
80 70
R
= 5
T = 125C
J
L = 100H
tf
= 200V
60
tr and tf (ns)
30
R
= 5
T = 125C
J
50 40 30
L = 100H
20 td(on) 10
20 10
tr
0 10
50 60 70 80 90 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
DD G
20
30
40
50 60 70 80 90 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1200
V I
DD
0 10
20
30
40
900 800
SWITCHING ENERGY (J)
V
= 200V
= 200V
R
= 5
D J
= 54A
T = 125C
J
1000
SWITCHING ENERGY (J)
T = 125C L = 100H EON includes diode reverse recovery.
Eoff
700 600 500 400 300 200 100
L = 100H EON includes diode reverse recovery.
800 600
Eon
Eon
1-2004
400 200 0
Eoff
050-7163 Rev A
50 60 70 80 90 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 10
20
30
40
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
APT30M61BFLL - SFLL
Gate Voltage
10 %
T = 125 C J
90%
Gate Voltage T = 125 C J
td(on) tr
Drain Current
td(off) 90%
90 %
t
Drain Voltage
5%
Switching Energy
10 %
5%
Drain Voltage
f
10%
Drain Current Switching Energy
0
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DS30
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7163 Rev A
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
1-2004
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
3.81 (.150) 4.06 (.160) (Base of Lead)

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