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APT20M20B2LL APT20M20LLL
POWER MOS 7
(R)
200V 100A 0.020
R
MOSFET
T-MAXTM
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1 5
TO-264
* Increased Power Dissipation * Easier To Drive * Popular T-MAXTM or TO-264 Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT20M20B2LL_LLL UNIT Volts Amps
200 100 400 30 40 568 4.55 -55 to 150 300 100 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
200 0.020 100 500 100 3 5
(VGS = 10V, ID = 50A)
Ohms A nA Volts
4-2004 050-7013 Rev D
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT20M20B2LL_LLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 100V ID = 100A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 100V ID = 100A @ 25C RG = 0.6 7 INDUCTIVE SWITCHING @ 25C VDD = 130V, VGS = 15V ID = 100A, RG = 5 7 INDUCTIVE SWITCHING @ 125C VDD = 130V, VGS = 15V ID = 100A, RG = 5
MIN
TYP
MAX
UNIT
6850 2180 95 110 43 47 13 40 26 2 465 455 920 915
MIN TYP MAX UNIT Amps Volts ns C nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
100 400 1.3 284 3.06 5
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -ID100A)
Reverse Recovery Time (IS = -ID100A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID100A, dl S /dt = 100A/s) Peak Diode Recovery
dv/ dt 6
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.22 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.25
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 0.50mH, RG = 25, Peak IL = 100A 5 The maximum current is limited by lead temperature 6 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID75A di/dt 700A/s VR VDSS TJ 150C 7 Eon includes diode reverse recovery. See figures 18, 20.
0.20
0.9
0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE 1 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
4-2004
050-7013 Rev D
Z
JC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
250 VGS =15 &10V 9V 200
APT20M20B2LL_LLL
RC MODEL Junction temp. ( "C) 0.0844 Power (Watts) 0.138 Case temperature 0.218F 0.0124F
150
7.5V 7V
100 6.5 50 6V 5.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
200 180
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON) MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
NORMALIZED TO = 10V @ I = 50A
D
160 140 120 100 80 60 40 20 0 01 23 456 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS TJ = +125C TJ = +25C TJ = -55C
1.30 1.20 1.10 VGS=10V 1.00 0.90 0.80 VGS=20V
0
120 100 80 60 40 20 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON)vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I V
D
0.90 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 50A = 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7013 Rev D
4-2004
508
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000
APT20M20B2LL_LLL
Ciss
C, CAPACITANCE (pF)
100
100S
Coss 1,000
1mS 10 10mS TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
100
Crss
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 75A
200 100 TJ =+150C TJ =+25C
12
VDS=40V VDS=100V
VDS=160V
8
10
4
40 60 80 100 120 140 160 180 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 90 80 70 td(off)
V
DD G
0
0
20
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 160 140 120
V
DD G
= 130V
R
= 5
T = 125C
J
L = 100H
td(on) and td(off) (ns)
60 50 40 30 20 10 0 20
= 130V
R
= 5
tr and tf (ns)
100 80 60 40 20 tf tr
T = 125C
J
L = 100H
td(on)
80 100 120 140 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
40
60
80 100 120 140 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 2500
0 20
40
60
1400
= 130V
1200
SWITCHING ENERGY (J)
R
= 5
T = 125C L = 100H EON includes diode reverse recovery.
1000 800 600
SWITCHING ENERGY (J)
J
2000 Eoff 1500 Eon 1000
V I
DD
Eon 400 200 0 20
= 130V
4-2004
D J
= 100A
500
T = 125C L = 100H E ON includes diode reverse recovery.
050-7013 Rev D
Eoff 40 60 0 0 5
80 100 120 140 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
90% 10% Gate Voltage TJ125C
APT20M20B2LL_LLL
Gate Voltage
td(on) tr
Drain Current
td(off) tf
90% Drain Voltage
T 125C J
90%
5% Switching Energy
10%
5%
Drain Voltage Switching Energy
10%
0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT100S20B
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
Source
2.21 (.087) 2.59 (.102) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
Source
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7013 Rev D
4-2004
19.81 (.780) 20.32 (.800)
1.01 (.040) 1.40 (.055)
Gate Drain
Gate Drain

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