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APT20M11JFLL
200V 176A 0.011
POWER MOS 7
(R)
R
FREDFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
APT20M11JFLL
D G S
All Ratings: TC = 25C unless otherwise specified.
UNIT Volts Amps
200 176 704 30 40 694 5.56 -55 to 150 300 176 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
200 0.011 250 1000 100 3 5
(VGS = 10V, ID = 88A)
Ohms A nA Volts
9-2004 050-7042 Rev C
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT20M11JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 100V ID = 176A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 100V ID = 176A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 133V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 133V, VGS = 15V ID = 176A, RG = 5 ID = 176A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
10320 4220 90 180 80 65 24 65 55 9 1190 2485 1260 2815
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
176 704 1.3 8
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -176A)
dv/ 5 dt
t rr Q rr IRRM
Reverse Recovery Time (IS = -176A, di/dt = 100A/s) Reverse Recovery Charge (IS = -176A, di/dt = 100A/s) Peak Recovery Current (IS = -176A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
250 500 0.9 2.5 12 20
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.18 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.20
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 0.23mH, RG = 25, Peak IL = 176A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID176A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.9 0.15 0.7 0.10
0.5
Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
9-2004
050-7042 Rev C
Z
JC
0.05
0.3
0.1 0 0.05 10-5 10-4
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
300
ID, DRAIN CURRENT (AMPERES)
Junction temp. (C) RC MODEL
APT20M11JFLL
VGS =15 &10V 8V
250 200 150
0.0268
0.0456F
7.5V
Power (watts)
0.109
0.765F
7V 100 6.5 50 0 6V 5.5V
0.0426 Case temperature. (C)
23.5F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
350
ID, DRAIN CURRENT (AMPERES)
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
300 250 200 150 100
VDS> ID (ON) x RDS(ON) MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
NORMALIZED TO = 10V @ I = 88A
D
1.30 1.20 1.10 1.00 0.90 0.80 VGS=20V 0 50 100 150 200 250 300 350 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
TJ = +125C TJ = +25C TJ = -55C
VGS=10V
50 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
180 160
ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I V
D
1.15
140 120 100 80 60 40 20 0 25
1.10
1.05
1.00
0.95
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
= 88A = 10V
GS
0.90 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7042 Rev C
9-2004
704 500
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
30,000 10,000 100S
C, CAPACITANCE (pF)
APT20M11JFLL
Ciss Coss
100 50
1,000
1mS TC =+25C TJ =+150C SINGLE PULSE 5 10 50 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
100 50
Crss
10mS 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 500
IDR, REVERSE DRAIN CURRENT (AMPERES)
10
1
10
0
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
= 176A
14 12 10 8 6 4 2 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 160 140 120 td(off)
V
DD G
VDS=40V VDS=100V
100 50
TJ =+150C TJ =+25C
VDS=160V
10 5
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 300 250 200
V
DD G
= 130V
R
= 5
T = 125C
J
L = 100H = 130V
td(on) and td(off) (ns)
R
= 5
80 60 40 20 0
T = 125C
J
tr and tf (ns)
100
tf 150 100 50 0 tr
L = 100H
td(on)
30
120 150 180 210 240 270 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
60
90
120 150 180 210 240 270 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 10000
V I
DD
30
60
90
8000
= 130V R = 5
= 130V
D J
= 176A
T = 125C
SWITCHING ENERGY (J)
SWITCHING ENERGY (J)
6000
J
8000
T = 125C L = 100H EON includes diode reverse recovery.
L = 100H E ON includes diode reverse recovery.
Eoff
6000
4000 Eoff 2000 Eon 120 150 180 210 240 270 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 30 60 90
4000 Eon 2000
050-7042 Rev C
9-2004
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
90% 10% Gate Voltage TJ125C
APT20M11JFLL
Gate Voltage
td(on)
td(off)
90% Drain Voltage
TJ125C
tr
90%
Drain Current
tf
10% 0 Drain Voltage Drain Current
5%
10% Switching Energy
5%
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT2X101D20
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7042 Rev C
9-2004
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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