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1000V 14A 0.780
APT10078BLL APT10078SLL
POWER MOS 7
(R)
R
MOSFET
TO-247
D3PAK
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
* Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT10078BLL_SLL UNIT Volts Amps
1000 14 56 30 40 403 3.23 -55 to 150 300 14 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1000 0.780 100 500 100 3 5
(VGS = 10V, ID = 7A)
Ohms A nA Volts
4-2004 050-7003 Rev C
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT10078BLL_SLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 14A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 14A @ 25C 6 RG = 1.6 INDUCTIVE SWITCHING @ 25C VDD = 667V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 667V, VGS = 15V ID = 14A, RG = 3 ID = 14A, RG = 3
MIN
TYP
MAX
UNIT pF
2525 430 75 95 12 60 9 8 30 9 355 75 740 95
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
14 56 1.3 692 7.87 10
(Body Diode) (VGS = 0V, IS = -ID14A)
Reverse Recovery Time (IS = -ID14A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID14A, dl S /dt = 100A/s) Peak Diode Recovery
dv/ 5 dt
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.31 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 13.27mH, RG = 25, Peak IL = 14A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ID-14A di/dt 700A/s VR 1000 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
, THERMAL IMPEDANCE (C/W)
0.30 0.25
0.9
0.7 0.20 0.5 0.15 0.10 0.05 0 0.3 Note:
PDM t1 t2
4-2004
050-7003 Rev C
JC
0.1 0.05 10-5 10-4
SINGLE PULSE
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
Z
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
Junction temp. (C) RC MODEL
30 VGS =15 & 8V 25 20 15 10
APT10078BLL_SLL
7V 6.5V
0.0258
0.00295F
Power (watts)
0.107
0.0114F
6V
0.177 Case temperature. (C)
0.174F
5.5V 5 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
60
ID, DRAIN CURRENT (AMPERES)
NORMALIZED TO = 10V @ 0.5 I = 7A
D
50 40 30 20 10 0
1.30 1.20 VGS=10V 1.10 1.00 0.90 0.80 VGS=20V
TJ = +125C TJ = +25C
TJ = -55C
0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
14 12 10 8 6 4 2 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
5 10 15 20 25 30 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50
ID, DRAIN CURRENT (AMPERES)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I
D
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 0.5 I V
GS
D
= 7A
= 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7003 Rev C
4-2004
56
OPERATION HERE LIMITED BY RDS (ON)
10,000
APT10078BLL_SLL
Ciss
ID, DRAIN CURRENT (AMPERES)
C, CAPACITANCE (pF)
10 5 100S
1000 Coss
1mS 1 10mS TC =+25C TJ =+150C SINGLE PULSE
100 Crss
.1
1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
= 14A
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100
10
12
VDS=100V VDS=250V
TJ =+150C 10 TJ =+25C
8
VDS=400V
4
20 40 60 80 100 120 140 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 60 50 td(off)
0 0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 50
40 tf
V
DD G
td(on) and td(off) (ns)
40 30 20 10 0
= 667V
tr and tf (ns)
R
= 3
30
V
DD G
T = 125C
J
L = 100H
= 667V
20
R
= 3
T = 125C
J
L = 100H
td(on)
tr
10
0
15 20 25 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
5
10
15 20 25 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1000 Eon
SWITCHING ENERGY (J)
0
0
5
10
1400 1200
SWITCHING ENERGY (J)
= 667V
R
= 3
T = 125C
J
L = 100H
Eon
800
1000 800 600 400 200 0
E ON includes diode reverse recovery.
600
400 Eoff 200
V I
DD
= 667V
4-2004
D J
= 14A
T = 125C L = 100H E ON includes
050-7003 Rev C
Eoff 0 5 10 15 20 25 0 0
diode reverse recovery.
ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
5 10 15 20 25 30 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
90% 10% Gate Voltage T 125C J
APT10078BLL_SLL
Gate Voltage
td(on)
90%
td(off)
Drain Voltage
TJ125C
tr
Drain Current
90%
tf
10% 0
5% Switching Energy
10%
5% Drain Voltage Switching Energy
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7003 Rev C
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
4-2004
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
3.81 (.150) 4.06 (.160) (Base of Lead)

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