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APT1003RKLL
1000V 4A 3.00
POWER MOS 7
(R)
R
MOSFET
TO-220
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
G
D
S
* Increased Power Dissipation * Easier To Drive * TO-220 Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT1003RKLL UNIT Volts Amps
1000 4 16 30 40 139 1.11 -55 to 150 300 4 10
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
425
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1000 3.00 100 500 100 3 5
(VGS = 10V, 2A)
Ohms A nA Volts
1-2004 050-7118 Rev A
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT1003RKLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 4A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 4A @ 25C RG = 1.6 6 INDUCTIVE SWITCHING @ 25C VDD = 667V, VGS = 15V ID = 4A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 667V, VGS = 15V ID = 4A, RG = 5
MIN
TYP
MAX
UNIT
694 135 25 34 5 22 8 4 25 10 13 42 40 48 J ns
nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr
rr dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
4 16 1.3 560 3.2 10
(Body Diode) (VGS = 0V, IS = -ID4A)
Reverse Recovery Time (IS = -ID4A, dl S /dt = 100A/s) Reverse Recovery Charge (IS = -ID4A, dl S/dt = 100A/s) Peak Diode Recovery
dv/ dt 5
Q
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.90 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 53.13mH, RG = 25, Peak IL = 4A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID4A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
1.0
, THERMAL IMPEDANCE (C/W)
0.80
0.9
0.7 0.60 0.5 0.40 0.3 0.20 0.1 0.05 0 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 1.0 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
1-2004
050-7118 Rev A
Z
JC
Typical Performance Curves
10 VGS =15 & 10V
ID, DRAIN CURRENT (AMPERES)
APT1003RKLL
7.5V 7V 6.5V
8
RC MODEL Junction temp. (C) 0.386 Power (watts) 0.508 Case temperature. (C) 0.0903F 0.00336F
6 6V 4 5.5V 2 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 16
ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.40
NORMALIZED TO V = 10V @ 2A
GS
14 12 10 8 6 4 2
1.30 VGS=10V 1.20
TJ = -55C
1.10 VGS=20V
TJ = +25C
1.00
0.90 0.80
TJ = +125C 0 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
23 456 7 8 9 10 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
1
4 3.5
ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I V
D
1.15
1.10 1.05
3 2.5 2 1.5 1 0.5 0 25
1.00
0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
2.5
= 2A = 10V
GS
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.1
1.0
1.5
0.9
1.0
0.5
0.7 0.6 -50
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7118 Rev A
1-2004
0.8
APT1003RKLL
16 10
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
4,000
5 100S
C, CAPACITANCE (pF)
1,000
Ciss
1 .5 TC =+25C TJ =+150C SINGLE PULSE 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
I
D
100
Coss
1mS 10mS
Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 100 10
.1
= 4A
12
VDS= 200V
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
TJ =+150C TJ =+25C
8
VDS= 500V
VDS= 800V
10
4
10 15 20 25 30 35 40 45 50 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 25 td(off) 20
td(on) and td(off) (ns)
0 0
5
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 70 60 50
V
DD G
1
= 667V
R
= 5
T = 125C
J
L = 100H V
DD G
= 667V
15
R
= 5
tr and tf (ns)
T = 125C
J
40 30 20
tf
L = 100H
10
5 td(on) 0 0 4 5 6 7 8 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10 0
tr 0 1 2 3
1
2
3
4 5 6 7 8 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 140 120
SWITCHING ENERGY (J)
V I
DD
90 80
SWITCHING ENERGY (J)
= 667V
= 667V
R
= 5
D J
= 4A
T = 125C
J
70 60 50 40 30 20 10 0
Eoff
T = 125C L = 100H EON includes diode reverse recovery.
L = 100H EON includes diode reverse recovery.
Eon
100 80 60 40 20 0
Eoff
1-2004
Eon
050-7118 Rev A
4 5 6 7 8 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
1
2
3
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
APT1003RKLL
10% Gate Voltage TJ125C
90%
Gate Voltage TJ125C
td(on)
Drain Current
td(off)
Drain Voltage
tr
5% 90% 10% Switching Energy 5% Drain Voltage
90% 10% 0
tf
Switching Energy
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-220AC Package Outline
1.39 (.055) 0.51 (.020)
Drain
10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 6.85 (.270) 5.85 (.230)
16.51 (.650) 14.23 (.560)
3.42 (.135) 2.54 (.100)
4.08 (.161) Dia. 3.54 (.139)
6.35 (.250) MAX. 14.73 (.580) 12.70 (.500)
0.50 (.020) 0.41 (.016) 2.92 (.115) 2.04 (.080) 4.82 (.190) 3.56 (.140)
Gate
1.01 (.040) 3-Plcs. 0.38 (.015) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190)
1.77 (.070) 3-Plcs. 1.15 (.045)
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7118 Rev A
1-2004
Drain Source

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