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| AP9620GM Pb Free Plating Product Advanced Power Electronics Corp. Low On Resistance Capable of 2.5V Drive C Fast Switching Simple Drive Requirement SO-8 S D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G S S -20V 20m -9.5A ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 8 -9.5 -7.6 -76 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit /W Data and specifications subject to change without notice 20020502 AP9620GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -20 -0.037 20 35 -1 -1 -25 100 - V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS=-4.5V, ID=-9.5A VGS=-2.5V, ID=-6.0A 28 30 6 3.5 26 500 70 300 2158 845 230 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-9.5A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= 8V ID=-9.5A VDS=-10V VGS=-5V VDS=-10V ID=-9.5A RG=6,VGS=-4.5V RD=1.05 VGS=0V VDS=-15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V Tj=25, IS=-2.5A, VGS=0V Min. Typ. Max. Units -2.08 -1.2 A V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on Min. copper pad. AP9620GM 120 100 T C =25 o C 90 -10V -8.0V 80 T C =150 o C -10V -8.0V -ID , Drain Current (A) -ID , Drain Current (A) -6.0V 60 60 -6.0V V GS =-4.0V 40 V GS =-4.0V 30 20 0 0 2 4 6 0 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 40 1.6 35 I D =-9.5A T C =25 I D =-9.5A V GS =4.5V 1.4 Normalized R DS(ON) RDS(ON) (m ) 30 1.2 25 1.0 20 0.8 15 1 2 3 4 5 6 0.6 -50 0 50 100 150 -V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP9620GM 10 3 2.5 8 -ID , Drain Current (A) 2 6 PD (W) 4 2 0 25 50 75 100 125 150 1.5 1 0.5 0 0 30 60 90 120 150 T c , Case Temperature ( C) o T c , Case Temperature ( C) o Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1000 1 Duty Factor = 0.5 100 Normalized Thermal Response (R thja) 0.2 100us 10 0.1 0.1 1ms 10ms 0.05 -ID (A) 0.02 0.01 1 PDM Single Pulse 100ms 1s 10s DC 0.01 t T 0.1 Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=125 oC/W T C =25 o C Single Pulse 0.01 0.1 1 10 0.001 100 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP9620GM f=1.0MHz 7 10000 6 I D =-9.5A V DS =-10V -VGS , Gate to Source Voltage (V) 5 4 C (pF) Ciss 1000 3 Coss 2 Crss 1 0 0 5 10 15 20 25 30 35 40 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100.00 1 0.8 10.00 -IS(A) 1.00 T j =25 C o -VGS(th) (V) 1.1 1.3 1.5 T j =150 o C 0.6 0.4 0.10 0.2 0.01 0.1 0.3 0.5 0.7 0.9 0 -50 0 50 100 150 -V SD (V) T j , Junction Temperature ( C) o Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP9620GM VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5 x RATED VDS RG G 10% S -5V VGS VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE 0.5 x RATED VDS G S -1~-3mA I G QG -4.5V QGS QGD D VGS I D Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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