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| AP0603GMA Pb Free Plating Product Advanced Power Electronics Corp. SO-8 similar area footprint and pin assignment Low Gate Charge Fast Switching Speed RoHS Compliant G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 6m 75A Description S D The APAK-5 package is preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SS SG APAK-5 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 20 75 55 300 62.5 0.5 4 Units V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 29 24 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient 3 Value Max. Max. 2 85 Units /W /W Data & specifications subject to change without notice 200401053-1/4 AP0603GMA Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.018 32 33 7.5 24 11.2 77 35 67 550 380 1.9 Max. Units 6 10 3 1 500 100 52 2.8 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=45A VGS=4.5V, ID=30A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=30A VDS=24V VGS=4.5V VDS=15V ID=30A RG=3.3,VGS=10V RD=0.5 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 2700 4200 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=45A, VGS=0V IS=30A, VGS=0V, dI/dt=100A/s Min. - Typ. 28 10 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on FR4 board. 4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25 2/4 AP0603GMA 120 120 ID , Drain Current (A) 90 T C =25 C ID , Drain Current (A) o 10V 7.0V 5.0V 4.5V 90 o T C = 15 0 C 10V 7.0V 5 .0V 4.5V 60 60 30 30 V G = 3.0 V V G =3.0V 0 0 2 4 6 0 0 2 4 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 14 1.7 12 I D = 30 A T c =25 Normalized RDS(ON) 1.3 I D =45A V G =10V RDS(ON) (m) 10 8 0.9 6 4 0.5 2 4 6 8 10 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 20 15 1.2 T j =150 C Is (A) 10 o T j =25 C o Normalized VGS(th) (V) 0.9 5 0.6 0 0 0.2 0.4 0.6 0.8 1 1.2 0.3 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP0603GMA f=1.0MHz 16 10000 I D =30A VGS , Gate to Source Voltage (V) 12 C (pF) V DS =15V V DS =20V V DS =24V C iss 8 1000 C oss C rss 4 0 100 0 20 40 60 80 1 6 11 16 21 26 31 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100 0.2 0.1 ID (A) 0.1 0.05 1ms 10 PDM 0.02 t T 0.01 Single Pulse T c =25 C Single Pulse 1 0.1 1 10 o 10ms 100ms DC 100 Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 120 V DS =5V ID , Drain Current (A) 90 VG QG 4.5V QGS QGD T j =25 o C T j =150 o C 60 30 Charge 0 0 2 4 6 8 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
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