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AO6408 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a load switch. Standard product AO6408 is Pbfree (meets ROHS & Sony 259 specifications). AO6408L is a Green Product ordering option. AO6408 and AO6408L are electrically identical.
Features
VDS (V) = 20V (VGS = 10V) ID = 8.8A RDS(ON) < 18m (VGS = 10V) RDS(ON) < 20m (VGS = 4.5V) RDS(ON) < 25m (VGS = 2.5V) RDS(ON) < 32m (VGS = 1.8V) ESD Rating: 2000V HBM
TSOP-6 Top View D D G 16 25 34 D D S G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Maximum 20 12 8.8 7 40 2 1.28 -55 to 150
Units V V A
VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 47.5 74 37
Max 62.5 110 40
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO6408, AO6408L
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Source leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, IG=250uA VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=8.8A TJ=125C RDS(ON) VGS=4.5V, ID=8A VGS=2.5V, ID=6A VGS=1.8V, ID=4A Forward Transconductance VDS=5V, ID=8.8A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Static Drain-Source On-Resistance 12 0.5 40 14.4 18.5 16 20.5 25.6 33 0.72 18 23 20 25 32 1 3 2200 Min 20 10 25 10 0.75 1 Typ Max Units V A A V V A m m m m S V A pF pF pF nC nC nC ns ns ns ns 27 ns nC
gFS VSD IS
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Qrr Turn-Off Fall Time
VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
1810 232 200 1.6 17.9 1.5 4.7 3.3 5.9 44 7.7 22 9.8
2.2 22
VGS=4.5V, VDS=10V, ID=8.8A
VGS=10V, VDS=10V, RL=1.1, RGEN=3
IF=8.8A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8.8A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO6408, AO6408L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40 10V 2.5V 30 4.5V 2V 16 12 20 ID(A) 8 10 VGS=1.5V 0 0 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 1 5 4 0 0 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics 0.5 1 2.5 125C 20 VDS=5V
ID (A)
25C
40 VGS=1.8V 30 RDS(ON) (m) VGS=2.5V VGS=4.5V
1.6 VGS=2.5V,6A Normalized On-Resistance 1.4 VGS=4.5V, 8A
20
1.2 VGS=10V, 8.8A 1
VGS=1.8V, 4A
10
VGS=10V
0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00
40
30 RDS(ON) (m)
ID=6A 1.0E-01 125C
125C
20 25C 10
IS (A)
1.0E-02 1.0E-03 1.0E-04 25C
0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO6408, AO6408L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 2800 VDS=10V ID=8.8A Capacitance (pF) 2400 2000 1600 1200 800 400 0 0 4 8 12 16 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 40 10s 10.0 ID (Amps) RDS(ON) limited 100s 10ms 0.1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1s 10s DC 0 0.001 0.01 0.1 1 10 100 1000 Power (W) 1ms 30 20 10 TJ(Max)=150C TA=25C 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 5 20 Coss Crss
4 VGS (Volts)
Ciss
3
2
1
0
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1
PD Ton
T 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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